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For 3-25-h Found Datasheets File :: 188422 Search Time::2.516ms
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				BOURNS INC
Part No.	2000-5R6-H 2000-2R7-H 2000-8R2-H R5-V
OCR Text	.... b nom. dim. c nom. 2000-r3 0.3 28.5 0.24 0.0010 0.35 0.60 0.059 2000-r5 0.5 24.7 0.41 0.0012 0.35 0.60 0.059 2000-r8 0.8 22.1 0.62 0.00...25.4 0.054 0.29 0.53 0.024 2000-390 39 3.3 29.9 0.059 0.29 0.53 0.024 2000-470 47 3.2 34.6 0.064 0...
Description	Inductor; Series:2000; Inductance:5.6uH; Inductance Tolerance: /- 20 %; Current Rating:9.7A; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Resistance:6.9mohm 1 ELEMENT, 2.7 uH, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 8.2 uH, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 0.5 uH, GENERAL PURPOSE INDUCTOR
File Size	384.35K / 1 Page	View it Online	Download Datasheet

				MURATA POWER SOLUTIONS INC
Part No.	D1U-H-2800-52-HB1C
OCR Text	...current sharing accuracy (up to 3 in parallel) at 100% load 10 % hot swap transients all outputs within regulation hold-up time 15 19 ms gen...25 0.310 0.009 [] 289,00 0,50 11.378 0.019 [] ref 321,53 12.659 [] 2,80 0,25 0.110 0.009 [] 1,0...
Description	2-OUTPUT AC-DC PWR FACTOR CORR MODULE
File Size	166.93K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPC8020-H
OCR Text	...hancement mode: V th = 1.1 to 2.3 V (V DS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Dr...25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 ...
Description	MOSFET TPC Series Field Effect Transistor Silicon N Channel MOS Type (Ultra High-Speed U-MOSIII)
File Size	84.90K / 7 Page	View it Online	Download Datasheet

				Powertip Technology
Part No.	PC1602LRS-LNH-H
OCR Text	....powertip.com.tw NO.PT-A-005-3 RECORDS OF REVISION Date 2003/06/21 Rev. 0 Description Revised Contents Note Page To...25 Item Logic Supply Voltage "H" Input Voltage "L" Input Voltage "H" Output Voltage "L" Output Volta...
Description	PC1602LRS-LNH-H
File Size	724.63K / 20 Page	View it Online	Download Datasheet

				Bourns Inc. BOURNS[Bourns Electronic Solutions] Bourns, Inc.
Part No.	H-385-1 H-385-2 H-385-3 H-385-4 H-385-5 H-385
OCR Text	.......Approximately 8.50 gm H-385-3......................................................................................Approximately 9.92 gm...25 "C" (.010) 21.08 .25 (.830 .010) .25 "A" (.010) 41.40 .38 (1.63 .015) 6.73 .13 (...
Description	Panel Seal Assembly
File Size	23.01K / 1 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPC8035-H
OCR Text	...rce ON-resistance: RDS (ON) = 2.3 m (typ.) High forward transfer admittance: \|Yfs\| = 70 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS...25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 ...
Description	Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?H) Field Effect Transistor Silicon N-Channel MOS Type (U-MOS楼碌-H)
File Size	211.55K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPC8036-H
OCR Text	...ource ON-resistance: RDS (ON) = 3.1 m (typ.) High forward transfer admittance: \|Yfs\| = 64 S (typ.) Low leakage current: IDSS = 10 A (max) (V...25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 ...
Description	Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?H) Field Effect Transistor Silicon N-Channel MOS Type (U-MOS楼碌-H)
File Size	213.60K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPC8039-H
OCR Text	...30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-s...25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 ...
Description	Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?H) Field Effect Transistor Silicon N-Channel MOS Type (U-MOS楼碌-H)
File Size	214.22K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	QM100CY-H
OCR Text	....0 2.0 100 2.0 2.5 1.75 2.0 12 3.0 0.2 0.65 0.1 mitsubishi transistor modules qm100cy-h high power switching use insulated type feb.1999 ...25? i b =0.6a i b =0.2a i b =0.4a i b =1.0a i b =2.0a 1 10 7 5 4 3 2 0 10 7 5 4 3 2 1.0 3.0 2.6...
Description	TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
File Size	81.09K / 5 Page	View it Online	Download Datasheet

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