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VICOR[Vicor Corporation]
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| Part No. |
16299 16299-A
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| Description |
Slim Power Relay, 1 Form A, 6A 250VAC, Silver Alloy Contact
HTSNK, C x-FLOW, .4H LOW FLOW, THREADED
HTSNK C x-FLOW .4H LOW FLOW THREADED
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| File Size |
61.80K /
1 Page |
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VICOR[Vicor Corporation]
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| Part No. |
16297 16297-A
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| Description |
Slim Power Relay, 1 Form A, 6A 250VAC, Silver Alloy Contact
HTSNK, B x-FLOW, .4H LOW FLOW, THREADED
HTSNK B x-FLOW .4H LOW FLOW THREADED
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| File Size |
61.91K /
1 Page |
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Alliance Semiconductor, Corp.
Integrated Silicon Solution, Inc.
ALSC[Alliance Semiconductor Corporation]
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| Part No. |
AS7C33128FT32_36B AS7C33128FT36B-80TQIN AS7C33128FT32B-10TQC AS7C33128FT32B-10TQCN AS7C33128FT32B-10TQI AS7C33128FT32B-10TQIN AS7C33128FT32B-65TQC AS7C33128FT32B-65TQCN AS7C33128FT32B-65TQI AS7C33128FT32B-65TQIN AS7C33128FT32B-75TQC AS7C33128FT32B-75TQCN AS7C33128FT32B-75TQI AS7C33128FT32B-75TQIN AS7C33128FT32B-80TQC AS7C33128FT32B-80TQCN AS7C33128FT32B-80TQI AS7C33128FT32B-80TQIN AS7C33128FT36B-10TQC AS7C33128FT36B-10TQCN AS7C33128FT36B-10TQI AS7C33128FT36B-10TQIN AS7C33128FT36B-65TQC AS7C33128FT36B-65TQCN AS7C33128FT36B-65TQI AS7C33128FT36B-65TQIN AS7C33128FT36B-75TQC AS7C33128FT36B-75TQCN AS7C33128FT36B-75TQI AS7C33128FT36B-75TQIN AS7C33128FT36B-80TQC AS7C33128FT36B-80TQCN AS7C33128FT36B-80TQI AS7C33128FT32B
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| Description |
3.3V 128K x 32/36 Flow Through synchronous SRAM 3.3 128K的x 32/36流通过同步SRAM
3.3V 128K x 32/36 Flow Through synchronous SRAM 128K x 36 STANDARD SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flow Through synchronous SRAM 128K x 32 STANDARD SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flow Through synchronous SRAM 128K x 32 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flow Through synchronous SRAM 128K x 32 STANDARD SRAM, 6.5 ns, PQFP100
3.3V 128K x 32/36 Flow Through synchronous SRAM 128K x 36 STANDARD SRAM, 6.5 ns, PQFP100
128K x 32 STANDARD SRAM, 10 ns, PQFP100 14 x 20 MM, TQFP-100
LM3876 Overture™ Audio Power Amplifier Series High-Performance 56W Audio Power Amplifier w/Mute; Package: ISOLATED TO220; No of Pins: 11; Qty per Container: 20; Container: Rail
LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 3000; Container: Reel
LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 1000; Container: Reel
sync SRAM - 3.3V
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| File Size |
404.75K /
19 Page |
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Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
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| Part No. |
CY7C1483V33-100BGC CY7C1483V33-117BGC CY7C1483V33-133BGC CY7C1483V33-150BGC CY7C1481V33-150AC CY7C1481V33-117AC CY7C1481V33-133BZC CY7C1481V33-150BGC CY7C1481V33-133AC CY7C1481V33-117BGC CY7C1481V33-133BGC CY7C1481V33-117BZC CY7C1481V33-150BZC CY7C1483V33-117AC CY7C1487V33-133BGC CY7C1487V33-117BGC CY7C1483V33-117BZC CY7C1483V33-133AC CY7C1481V33-100AC CY7C1483V33-100AC CY7C1487V33-150BGC
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| Description |
IC, SDRAM, 64M BIT, 512Kx4x32 BIT,3.3V,10NS,100MHZ,TSOP-86
2M x 36/4M x 18/1m x 72 flow-through SRAM 4M x 18 STANDARD SRAM, 7.5 ns, PQFP100
2M x 36/4M x 18/1m x 72 flow-through SRAM 1m x 72 CACHE SRAM, 6.5 ns, PBGA209
2M x 36/4M x 18/1m x 72 flow-through SRAM 1m x 72 STANDARD SRAM, 7.5 ns, PBGA209
2M x 36/4M x 18/1m x 72 flow-through SRAM 4M x 18 STANDARD SRAM, 7.5 ns, PBGA165
2M x 36/4M x 18/1m x 72 flow-through SRAM 4M x 18 STANDARD SRAM, 6.5 ns, PQFP100
2M x 36/4M x 18/1m x 72 flow-through SRAM 2M x 36 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1m x 72 flow-through SRAM 4M x 18 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1m x 72 flow-through SRAM 1m x 72 STANDARD SRAM, 5.5 ns, PBGA209
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| File Size |
641.84K /
30 Page |
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Bourns, Inc.
Electronic Theatre Controls, Inc.
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| Part No. |
EDI2CG472128V10D2 EDI2CG472128V85D2 EDI2CG472128V-D2
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| Description |
4x128Kx72, 3.3V sync/sync Burst SRAM(4x128Kx72, 3.3V0ns,同步/同步脉冲静态RAM模块) 4x128Kx723.3同步/同步突发静态存储器x128Kx723.3伏，10纳秒，同同步脉冲静态内存模块）
4x128Kx72, 3.3V sync/sync Burst SRAM(4x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块) 4x128Kx72.3同步/同步突发静态存储器x128Kx72.3伏，8.5ns，同同步脉冲静态内存模块）
4x128Kx72, 3.3V sync/sync Burst SRAM(4x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?)
SSRAM Modules
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| File Size |
356.49K /
12 Page |
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Renesas Electronics Corporation.
Renesas Electronics, Corp.
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| Part No. |
M38230G4-xxxFP M38230G4-xxxHP M38231G4-xxxHP M38232G4-xxxFP M38232G4-xxxHP M38233G4-xxxFP M38233G4-xxxHP M38234G4-xxxFP M38234G4-xxxHP M38235G4-xxxFP M38230G6-xxxFP M38230G6-xxxHP M38231G6-xxxFP M38231G6-xxxHP M38232G6-xxxFP M38232G6-xxxHP M38233G6-xxxFP M38233G6-xxxHP M38234G6-xxxFP M38234G6-xxxHP M38235G6-xxxFP M38235G6-xxxHP M38236G6-xxxHP M38237G6-xxxFP M38237G6-xxxHP M38238G6-xxxFP M38230G7-xxxFP M38230G7-xxxHP M38231G7-xxxFP M38231G7-xxxHP M38232G7-xxxFP M38232G7-xxxHP M38233G7-xxxFP M38233G7-xxxHP M38234G7-xxxFP M38234G7-xxxHP M38235G7-xxxFP M38235G7-xxxHP M38236G7-xxxFP M38236G7-xxxHP M38237G7-xxxFP M38237G7-xxxHP M38238G7-xxxFP M38238G7-xxxHP M38239G7-xxxFP M38239G7-xxxHP M38230G8-xxxFP M38230G8-xxxHP M38231G8-xxxFP M38231G8-xxxHP M38232G8-xxxFP M38232G8-xxxHP M38233G8-xxxFP M38233G8-xxxHP M38234G8-xxxFP M38234G8-xxxHP M38235G8-xxxFP M38235G8-xxxHP M38236G8-xxxFP M38236G8-xxxHP M38237G8-xxxFP M38237G8-xxxHP M38238G8-xxxFP M38238G8-xxxHP M38230GA-xxxFP M38230GA-xxxHP M38231GA-xxxFP M38231GA-xxxHP M38232GA-xxxFP M38232GA-xxxHP M38233GA-xxxFP M38233GA-xxxHP M38234GA-xxxFP M38234GA-xxxHP M38235GA-xxxFP M38235GA-xxxHP M38236GA-xxxFP M38236GA-xxxHP M38237GA-xxxFP M38237GA-xxxHP
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| Description |
18-Mbit (512K x 36/1m x 18) flow-through SRAM; Architecture: Standard sync, flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1m x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1m x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1m x 18) Pipelined SRAM; Architecture: Standard sync, Pipeline SCD; Density: 18 Mb; Organization: 1mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1m x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1m x 18) flow-through SRAM; Architecture: Standard sync, flow-through; Density: 18 Mb; Organization: 1mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1m x 36/2 M x 18/512K x 72) flow-through SRAM with NoBL(TM) Architecture; Architecture: NoBL, flow-through; Density: 36 Mb; Organization: 1mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1m x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1m x 36/2M x 18/512K x 72) Pipelined sync SRAM; Architecture: Standard sync, Pipeline SCD; Density: 36 Mb; Organization: 1mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1m x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1m x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1m x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1m x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1m x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1m x 72) Pipelined sync SRAM; Architecture: Standard sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1m x 36/2M x 18/512K x 72) Pipelined sync SRAM; Architecture: Standard sync, Pipeline SCD; Density: 36 Mb; Organization: 1mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1m x 18) flow-through SRAM; Architecture: Standard sync, flow-through; Density: 18 Mb; Organization: 1mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1m x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1m x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
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| File Size |
901.80K /
76 Page |
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it Online |
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Price and Availability
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