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  2m x 32 sdram 512k x 32bit x 4 Datasheet PDF File

For 2m x 32 sdram 512k x 32bit x 4 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    Samsung Electronic
Part No. K4D623238B-GQC
Description 512k x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet

File Size 289.92K  /  17 Page

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    W981616AH W981616AHB1

Winbond Electronics
Part No. W981616AH W981616AHB1
Description 512 x 2 Banks x 16 Bits sdram
512k x 2 BANKS x 16 BIT sdram
From old datasheet system

File Size 1,275.25K  /  40 Page

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    K4M56323LE-MS80 K4M56323LE K4M56323LE-EC1H K4M56323LE-EC1L K4M56323LE-EC80 K4M56323LE-EE1H K4M56323LE-EE1L K4M56323LE-EE

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4M56323LE-MS80 K4M56323LE K4M56323LE-EC1H K4M56323LE-EC1L K4M56323LE-EC80 K4M56323LE-EE1H K4M56323LE-EE1L K4M56323LE-EE80 K4M56323LE-EL1H K4M56323LE-EL1L K4M56323LE-EL80 K4M56323LE-EN1H K4M56323LE-EN1L K4M56323LE-EN80 K4M56323LE-ER1H K4M56323LE-ER1L K4M56323LE-ER80 K4M56323LE-ES1H K4M56323LE-ES1L K4M56323LE-ES80 K4M56323LE-MC1H K4M56323LE-MC1L K4M56323LE-MC80 K4M56323LE-ME1H K4M56323LE-ME1L K4M56323LE-ME80 K4M56323LE-ML1H K4M56323LE-ML1L K4M56323LE-MN1H K4M56323LE-MN1L K4M56323LE-MN80 K4M56323LE-MR1H K4M56323LE-MR1L K4M56323LE-MR80 K4M56323LE-MS1H K4M56323LE-MS1L K4M56323LE-ML80
Description 2m x 32Bit x 4 Banks Mobile sdram in 90FBGA 2米x 32Bit的4银行0FBGA移动sdram
RES 180K 5% 0603
Surface Mount Resistors Thick Film Chip Resistors

File Size 139.56K  /  12 Page

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    K4D263238F K4D263238F-QC40 K4D263238F-QC50

Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
Part No. K4D263238F K4D263238F-QC40 K4D263238F-QC50
Description 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL
128Mbit DDR sdram
From old datasheet system

File Size 235.10K  /  17 Page

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    CERAMATE TECHNOLOGY CO., LTD.
Part No. 50S116T 50S116T-5 50S116T-6 50S116T-7
Description High-speed synchronous dynamic random access memory (sdram), organized as 512k words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (sdram), organized as 512k words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (sdram), organized as 512k words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
sdram(512k x 2 BANKS x 16 BITS sdram)

File Size 1,302.08K  /  42 Page

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    K4S64323LH-HN75 K4S64323LH K4S64323LH-FC1H K4S64323LH-FC1L K4S64323LH-FC60 K4S64323LH-FC75 K4S64323LH-FE1H K4S64323LH-FE

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S64323LH-HN75 K4S64323LH K4S64323LH-FC1H K4S64323LH-FC1L K4S64323LH-FC60 K4S64323LH-FC75 K4S64323LH-FE1H K4S64323LH-FE1L K4S64323LH-FE75 K4S64323LH-FF1H K4S64323LH-FF1L K4S64323LH-FF60 K4S64323LH-FF75 K4S64323LH-FG1H K4S64323LH-FG1L K4S64323LH-FG60 K4S64323LH-FG75 K4S64323LH-FL1H K4S64323LH-FL1L K4S64323LH-FL60 K4S64323LH-FL75 K4S64323LH-FN1H K4S64323LH-FN1L K4S64323LH-FN60 K4S64323LH-FN75 K4S64323LH-HC1H K4S64323LH-HC1L K4S64323LH-HC60 K4S64323LH-HC75 K4S64323LH-HE1H K4S64323LH-HE1L K4S64323LH-HE60 K4S64323LH-HE75 K4S64323LH-HF1H K4S64323LH-HF1L K4S64323LH-HF60 K4S64323LH-HF75 K4S64323LH-HG1H K4S64323LH-HG1L K4S64323LH-HG60 K4S64323LH-HG75 K4S64323LH-HL1H K4S64323LH-HL1L K4S64323LH-HL60 K4S64323LH-HL75 K4S64323LH-HN1H K4S64323LH-HN1L K4S64323LH-HN60 K4S64323LH-FE60 K4S64323LH-FF1H0 K4S64323LH-FF1L0 K4S64323LH-FF750 K4S64323LH-FC1H0 K4S64323LH-FN1L0 K4S64323LH-HL1L0
Description 2m x 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
Dual Rail-To-Rail Micropower Operational Amplifier 8-PDIP 0 to 70 12k × 32Bit的4银行0FBGA移动sdram
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70 12k × 32Bit的4银行0FBGA移动sdram
Dual Rail-To-Rail Micropower Operational Amplifier 8-TSSOP 0 to 70 12k × 32Bit的4银行0FBGA移动sdram
512k x 32Bit x 4 Banks Mobile sdram in 90FBGA 12k × 32Bit的4银行0FBGA移动sdram

File Size 139.23K  /  12 Page

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    Elite Semiconductor Memory Technology, Inc.
Part No. M52D32321A-10BG
Description 512k x 32Bit x 2Banks Synchronous DRAM 1M x 32 SYNCHRONOUS DRAM, 8 ns, PBGA90

File Size 702.69K  /  29 Page

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    HY57V653220BTC-6 HY57V653220BTC HY57V653220BTC-10 HY57V653220BTC-10P HY57V653220BTC-5 HY57V653220BTC-55 HY57V653220BTC-7

Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIx[Hynix Semiconductor]
Part No. HY57V653220BTC-6 HY57V653220BTC HY57V653220BTC-10 HY57V653220BTC-10P HY57V653220BTC-5 HY57V653220BTC-55 HY57V653220BTC-7 HY57V653220BTC-8
Description 4 Banks x 512k x 32Bit Synchronous DRAM 2m x 32 SYNCHRONOUS DRAM, 6 ns, PDSO86

File Size 152.09K  /  12 Page

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    WED9LAPC3C16V8BC WED9LAPC3C16V8BI

White Electronic Designs Corporation
Part No. WED9LAPC3C16V8BC WED9LAPC3C16V8BI
Description 512k x 32 SSRAM / 1M x 64 sdram

File Size 573.47K  /  24 Page

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    WED9LAPC2C16V8BC WED9LAPC2C16V8BI

White Electronic Designs Corporation
Part No. WED9LAPC2C16V8BC WED9LAPC2C16V8BI
Description 512k x 32 SSRAM / 1M x 64 sdram

File Size 807.17K  /  24 Page

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For 2m x 32 sdram 512k x 32bit x 4 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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