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				Mitsubishi
Part No.	M6MGB E99007
OCR Text	216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION The MITSUBISHI M6MGB/T166S2BWG is a Stacked Chip Scale Package (S-CSP) that ...
Description	16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY From old datasheet system
File Size	256.64K / 30 Page	View it Online	Download Datasheet

				INTEL[Intel Corporation]
Part No.	M80C286
OCR Text	...ntiguous sequence of up to 64K (216) 8-bit bytes Memory is addressed using a two component address (a pointer) that consists of a 16-bit seg...word All operations assume a 2's complement representation Signed 32 and 64-bit integers are support...
Description	HIGH PERFORMANCE CHMOS MICROPROCESSOR WITH MEMORY MANAGEMENT AND PROTECTION
File Size	940.52K / 60 Page	View it Online	Download Datasheet

				INTEL[Intel Corporation]
Part No.	DT28F016SA-100 DT28F016SA-150 DA28F016SA-080 E28F016SA-070 E28F016SA-080 E28F016SA-100 E28F016SA-120 E28F016SA-150 DA28F016SA-070 DA28F016SA-100 DA28F016SA-120 DA28F016SA-150
OCR Text	...igh-performance 16-Mbit (16,777,216 bit) block erasable nonvolatile random access memory organized as either 1 Mword x 16 or 2 Mbyte x 8. Th...word increments typically within 6 s, a 33% improvement over the 28F008SA. A block erase operation e...
Description	28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
File Size	801.03K / 55 Page	View it Online	Download Datasheet

				http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	M5M29GB160BVP M5M29GB160BVP-80 M5M29GT160BVP M5M29GT160BVP-80 E99001_A M5M29GB160BWG M5M29WB160BVP M5M29WT160BVP M5M29GB161BVP M5M29WT161BWG M5M29GB161BWG M5M29GT160BWG M5M29GT161BVP M5M29GT161BWG M5M29WB160BWG M5M29WB161BVP M5M29WB161BWG M5M29WT160BWG M5M29WT161BVP
OCR Text	216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alterna...
Description	16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY From old datasheet system 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
File Size	226.99K / 25 Page	View it Online	Download Datasheet

				http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	M5M29GB M5M29GB161BWG M5M29GT161BWG E99002_A M5M29WT161BWG M5M29GB160BVP M5M29GB160BWG M5M29GB161BVP M5M29GT160BVP M5M29GT160BWG M5M29GT161BVP M5M29WB160BVP M5M29WB160BWG M5M29WB161BVP M5M29WB161BWG M5M29WT160BVP M5M29WT160BWG M5M29WT161BVP M5M29T161BWG
OCR Text	216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Ope...
Description	16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory From old datasheet system 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY CMOS 3.3V-only block erase flash memory
File Size	198.45K / 23 Page	View it Online	Download Datasheet

				AD[Analog Devices]
Part No.	AD9853 AD9853AS AD9853-45PCB AD9853-65PCB
OCR Text	...84 178 170 36 16 400 230 224 216 54 20 595 mA mA mA mA mA mA NOTES 1 Reference clock = 28 MHz with clock multiplier enabled; supply...Word #1 FSK Mode: Specifies the "space" frequency (F0). All Other Modes: Specifies the carrier frequ...
Description	Programmable Digital QPSK/16-QAM Modulator Programmable Digital OPSK/16-QAM Modulator
File Size	333.90K / 31 Page	View it Online	Download Datasheet

				ATMEL Corporation
Part No.	ATC18RHA
OCR Text	...n capabilities NAME ATC18RHA95_216 ATC18RHA95_324 ATC18RHA95_404 ATC18RHA95_504 MH1 EQUIVALENCE NA MH1099E MH1156E MH1242E SIZE (mm) 6.19x6.19 8.76x8.76 10.66x10.66 13.03x13.03 PADS (+power only) 216 (+8) 324 (+8) 404 (+8) 504 (+8) GATES (...
Description	Rad. Hard 0.18 Um CMOS Cell-based ASIC for Space Use
File Size	217.03K / 19 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112805F-6 HM5112805FLTD-6 HM5112805FTD-6
OCR Text	...ynamic RAMs organized as 16,777,216-word x 8-bit. They have realized high performance and low power by employing CMOS process technology. HM5112805F, HM5113805F offer Extended Data Out (EDO) Page Mode as a high speed access mode. They are p...
Description	DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
File Size	460.85K / 34 Page	View it Online	Download Datasheet

				hitachi
Part No.	HN62W4416SERIES 62W4416
OCR Text	...50 ns (max) * Low power Active: 216 mW (max) Standby: 108 W (max) * Byte-wide or word-wide data organization (Switched by BHE terminal) * Three-state data output for or-tying * Directly LVTTL compatible All inputs and outputs Ordering In...
Description	From old datasheet system
File Size	65.77K / 9 Page	View it Online	Download Datasheet

				hitachi
Part No.	HN62W454SERIES 62W454B
OCR Text	...0 ns (max) * Low power Active: 216 mW (max) Standby: 108 W (max) * Directly LVTTL compatible * All inputs and outputs Ordering Information Type No. HN62W454BP-12 HN62W454BP-15 HN62W454BCP-12 HN62W454BCP-15 Access time 120 ns 150 ns 12...
Description	From old datasheet system
File Size	59.12K / 9 Page	View it Online	Download Datasheet

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