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Data Device, Corp.
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| Part No. |
K4D263238I-QC500 K4D263238I-UC400 K4D263238I-UC500
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| OCR Text |
...in stable condition for minimum 200us. 3. the minimum of 200us after stable power and clock(ck,ck ), apply nop and take cke to be high. 4. issue precharge command for all banks of the device. 5. issue a ... |
| Description |
4M X 32 DDR DRAM, 0.7 ns, PQFP100 20 X 14 MM, 0.65 MM PITCH, TQFP-100
4M X 32 DDR DRAM, 0.6 ns, PQFP100 20 X 14 MM, 0.65 MM PITCH, LEAD FREE, TQFP-100
4M X 32 DDR DRAM, 0.7 ns, PQFP100 20 X 14 MM, 0.65 MM PITCH, LEAD FREE, TQFP-100
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| File Size |
319.37K /
17 Page |
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Samsung Electronic
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| Part No. |
K4D26323RA-GC
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| OCR Text |
...in stable condition for minimum 200us. 3. the minimum of 200us after stable power and clock(ck, ck ), apply nop and take cke to be high . 4. issue precharge command for all banks of the device. 5. issu... |
| Description |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
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| File Size |
283.36K /
17 Page |
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it Online |
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Sensitron Semiconductor
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4D263238G-GC360 K4D263238G-GC33 K4D263238G-GC2A0 K4D263238G-VC K4D263238G-VC330
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| OCR Text |
...in stable condition for minimum 200us. 3. the minimum of 200us after stable power and clock(ck,ck ), apply nop and take cke to be high . 4. issue precharge command for all banks of the device. 5. issue... |
| Description |
4M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
4M X 32 DDR DRAM, 0.55 ns, PBGA144 FBGA-144
4M X 32 DDR DRAM, 0.55 ns, PBGA144 LEAD FREE, FBGA-144
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| File Size |
431.90K /
20 Page |
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it Online |
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Data Device, Corp.
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| Part No. |
K4D261638I-TC400 K4D261638I-LC400 K4D261638I-LC500
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| OCR Text |
...in stable condition for minimum 200us. 3. the minimum of 200us after stable power and clock(ck,ck ), apply nop and take cke to be high . 4. issue prechar ge command for all banks of the device. 5. issue ... |
| Description |
8M X 16 DDR DRAM, 0.6 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
8M X 16 DDR DRAM, 0.6 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
8M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
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| File Size |
343.12K /
19 Page |
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it Online |
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Monolithic Power Systems, Inc.
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| Part No. |
MP20041DGT-MS-LF-Z MP20041DGT-GS-LF-Z
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| OCR Text |
...5 c for both channel enabled. 200us/div 200us/div load transient response i load =10 to 50ma, with resistor load load transient response i load =10 to 200ma, with resistor load load transient response i load =10 to 300ma, with resistor lo... |
| Description |
DUAL OUTPUT, FIXED POSITIVE LDO REGULATOR, QCC8 2 X 2 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MO-229VCCD-3, TQFN-8
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| File Size |
326.14K /
11 Page |
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Hynix Semiconductor, Inc.
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| Part No. |
HY27UG088G2M-TIS HY27UG088G2M-TCB HY27UG088G2M-TPEB HY27UG088G2M-TIP HY27UG088G2M-TEB HY27UG088G2M-TPIB
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| OCR Text |
...ns (min.) - page program time: 200us (typ.) copy back program mode - fast page copy without external buffering cache program mode - internal cache register to improve the program throughput fast block erase - block erase time: 2ms ... |
| Description |
1G X 8 FLASH 3.3V PROM, 25 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, PLASTIC, TSOP1-48
1G X 8 FLASH 3.3V PROM, 25 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, PLASTIC, TSOP1-48
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| File Size |
368.41K /
53 Page |
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it Online |
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Hynix Semiconductor, Inc.
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| Part No. |
HY27UH088GDM-TPEB HY27UH088GDM-TIS HY27UH088GDM-TIP
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| OCR Text |
...0ns(min.) - page program time: 200us (typ.) copy back program mode - fast page copy without external buffering cache program mode - internal cache register to improve the program throughput fast block erase - block erase time: 2ms ... |
| Description |
1G X 8 FLASH 3.3V PROM, 30 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48
1G X 8 FLASH 3.3V PROM, 30 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
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| File Size |
440.94K /
53 Page |
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it Online |
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Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
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| Part No. |
HY27UG164GDM-UPEB HY27UG084GDM-UPEB HY27UG164G2M-TPCP HY27UG164G2M-TPIP HY27UG164G2M-TPES
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| OCR Text |
... - page program time: 200us (typ.) copy back program mode - fast page copy without external buffering cache program mode - internal cache register to improve the program throughput fast block erase - block erase time: 2ms ... |
| Description |
256M X 16 FLASH 3.3V PROM, 30 ns, PBGA52 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, ULGA-52
512M X 8 FLASH 3.3V PROM, 30 ns, PBGA52 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, ULGA-52
256M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
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| File Size |
452.53K /
54 Page |
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it Online |
Download Datasheet |
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