2.20-2.45mm pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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2.20-2.45mm Datasheet PDF File

For 2.20-2.45mm Found Datasheets File :: 536 Search Time::2.328ms
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				Toshiba Semiconductor
Part No.	SSM3J15FV
OCR Text	...4 V) : Ron = 32 (max) (@VGS = -2.5 V) Unit: mm 0.22 0.05 1.2 0.05 0.32 0.05 0.80 0.05 Absolute Maximum Ratings (Ta = 25C) Characte...20 -100 -200 150 150 -55~150 Unit V V mA mW C C 1.2 0.05 0.8 0.05 0.4 0.4 1 1 3 ...
Description	Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications
File Size	134.16K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3K16FV
OCR Text	... mm 1.20.05 0.80.05 0.320.05 3 2 0.130.05 : Ron = 4.0 (max) (@VGS = 2.5 V) 0.4 1 Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (N...
Description	Silicon N Channel MOS Type High Speed Switching Applications
File Size	124.16K / 5 Page	View it Online	Download Datasheet

				http:// Toshiba Semiconductor
Part No.	SSM3K15FV07 SSM3K15FV
OCR Text	... mm 1.20.05 0.80.05 0.320.05 3 2 0.130.05 Optimum for high-density mounting in small packages * Low on-resistance : Ron = 4.0 (max) (@VGS = 4 V) 1.20.05 0.80.05 0.4 : Ron = 7.0 (max) (@VGS = 2.5 V) 1 Absolute Maximum Rati...
Description	High Speed Switching Applications
File Size	120.01K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3K04FV
OCR Text	... mm 1.20.05 0.80.05 0.320.05 3 2 0.130.05 * * * * * With built-in gate-source resistor: RGS = 1 M (typ.) 2.5 V gate drive High input impedance 1.20.05 0.80.05 0.4 Low gate threshold voltage: Vth = 0.7~1.3 V Optimum for high-de...
Description	High Speed Switching Applications
File Size	521.79K / 5 Page	View it Online	Download Datasheet

				Toshiba, Corp. Toshiba Semiconductor
Part No.	SSM3K03FV
OCR Text	...0.05 1.20.05 0.80.05 0.320.05 3 2 0.130.05 Unit: mm * * * * 2.5 V gate drive 1.20.05 0.80.05 High input impedance Low gate threshold voltage: Vth = 0.7~1.3 V Optimum for high-density mounting in small packages 0.4 1 Ab...
Description	High Speed Switching Applications 高速开关应
File Size	520.44K / 5 Page	View it Online	Download Datasheet

				Toshiba, Corp. Toshiba Semiconductor
Part No.	SSM3J16FV
OCR Text	...4 V) : Ron = 12 (max) (@VGS = -2.5 V) : Ron = 45 (max) (@VGS = -1.5 V) 1.20.05 0.80.05 0.320.05 3 0.130.05 1. Gate 2. Source 3. Drain Absolute Maximum Ratings (Ta = 25C) 1.20.05 0.80.05 Gate-Source voltage Drain current DC Pulse...
Description	Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications 场效应晶体管硅P通道马鞍山型高速开关应用模拟开关应
File Size	169.49K / 5 Page	View it Online	Download Datasheet

				Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
Part No.	DF3A8.2FV
OCR Text	... lowers the mounting cost. 1 2 Absolute Maximum Ratings (Ta = 25C) Characteristics Power dissipation Junction temperature Storage tem...20 0.5 Unit V A pF 38 1 2007-11-01 DF3A8.2FV Guaranteed Level of ESD Immunit...
Description	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD)
File Size	126.52K / 3 Page	View it Online	Download Datasheet

				Dubilier
Part No.	CLP1000CF200 CLP1000CF20011 CLP1000BG200 CLP1000AB200 DBCDGMMSR15G11 CLP1000AG200 CLP1000DG200 CLP1000AE200 CLP1000AC200
OCR Text	... 4 70 ~ 68000f 4 7 ~ 2 700f t em per atur e r ang e -40 ~ +85c -25 ~ +85c capacitance t oler ance -20 ~ +20c (at 20c, 1 20hz) leak ag e cur r ent 1=0.02cv (a) (af t er 5 m...
Description	CAPACITORS ALUMINIUM ELECTROLYTIC STANDARD TEMP. SNAP-IN CLP D TYPE CONNECTORS LOW COST DUAL PORT RIGHT ANGLE CAPACITORS ALUMINIUM ELECTROLYTIC STANDARD TEMP. SNAP-IN CLP
File Size	181.69K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK3376MFV
OCR Text	2SK3376MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376MFV For ECM * Application for Ultra-compact ECM 0.220.05 1.20.05 0.320.05 3 2 0.130.05 0.80.05 Unit: mm Absolute Maximum Ratings (Ta=25C) Charac...
Description	Silicon N Channel Junction Type For ECM
File Size	146.65K / 6 Page	View it Online	Download Datasheet

				Power-One, Inc.
Part No.	WYE-472ML06 WYE-332ML04 WYE-332ML06 WYE-472ML05 WYE-332ML05
OCR Text	... www.worldproducts.com rev. 4.2 (10.11.07) 218 \| protection products catalog uninsulated leads 30 mm min. p center to center l h w see le...20% (4) lead lengths nil = 30mm min, solid uninsultated wire ? = 0.8mm diameter l04...
Description	CAPACITOR, METALLIZED FILM, POLYESTER, 3000 V, 0.0047 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, METALLIZED FILM, POLYESTER, 3000 V, 0.0033 uF, THROUGH HOLE MOUNT RADIAL LEADED
File Size	100.78K / 2 Page	View it Online	Download Datasheet

For 2.20-2.45mm Found Datasheets File :: 536 Search Time::2.328ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |