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Silicon Standard
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Part No. |
SSM4565GM
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OCR Text |
... - ns t f fall time r d =20w - 11 - ns c iss input capacitance v gs =0v - 1400 2240 pf c oss output capacitance v ds =25v - 250 - pf c rss reverse transfer capacitance f=1.0mhz - 170 - pf source-drain diode symbo... |
Description |
N AND P-chANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
454.58K /
8 Page |
View
it Online |
Download Datasheet
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http:// POWEREX[Powerex Power Semiconductors] Mitsubishi Electric Corporation
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Part No. |
FS30KMJ-03
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OCR Text |
...IN CURRENT ID (A)
16
PD = 20W
30
3V
12
2.5V
20
8
2V Tc = 25C Pulse Test
10
PD = 20W 2V
4
0
0
1.0
2.0...ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. chANNEL TEMPE... |
Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITchING USE
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File Size |
46.63K /
4 Page |
View
it Online |
Download Datasheet
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Mitsubishi Electric Corporation
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Part No. |
FS30KMH-03
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OCR Text |
...URRENT ID (A)
40
16
PD = 20W
30
2.5V
12
1.5V
20
2V
8
10
1.5V PD = 20W
4
Tc = 25C Pulse Test
0
0
1...ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. chANNEL TEMPE... |
Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITchING USE
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File Size |
49.25K /
4 Page |
View
it Online |
Download Datasheet
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
FX6KMJ-2
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OCR Text |
...0V -5V -4V -3.5V -6 -3V -4 PD = 20W -2 -2.5V
OUTPUT chARACTERISTICS (TYPICAL) -5.0
Tc = 25C Pulse Test
DRAIN CURRENT ID (A)
DRAI...ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. chANNEL TEMPE... |
Description |
HIGH-SPEED SWITchING USE
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File Size |
50.35K /
4 Page |
View
it Online |
Download Datasheet
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Price and Availability
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