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Hamamatsu Photonics K.K.
HAMAMATSU[Hamamatsu Corporation]
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| Part No. |
R2486-04 R2486 R2486-01 R2486-02 R2486-03
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| OCR Text |
...2486: Flying lead type (Fig. 9) 2. R2486-01: Provided with high-voltage divider circuit; enables direct reading of signals from each anode t...04: Variant type of R2486-03 with the aluminum case. (Fig.13)
The R2486 series enables the acquis... |
| Description |
POSITION-SENSITIVE PHOTOMULTIPLIER TUBES WITH CROSSED WIRE ANODES 位置灵敏光电倍增管带交叉钢丝阳极
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| File Size |
521.10K /
8 Page |
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SAMTEC INC
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| Part No. |
CBTE-060-04-C-D
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| OCR Text |
2.477]) .003[.08] (typ) 2 max sway "a" "a" -lc: locking clip option lc-08-tm-01 bte-xxx-xx-d fig. 1 cbte-060-01-x-d-lc shown ((no of po...04: .6010[15.265] -05: .7190[18.263] -06: .8370[21.260] -07: .9542 [24.237] -08: 1.1511[29.238] -09... |
| Description |
120 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
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| File Size |
591.20K /
3 Page |
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NXP Semiconductors N.V.
Philips
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| Part No. |
BSP030-04 BSP030
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| OCR Text |
...ilability: BSP030 in SOT223.
2. Features
s s s s s TrenchMOSTM technology Fast switching Low on-state resistance Logic level compatible ...04 -- 26 July 2000
2 of 13
Philips Semiconductors
BSP030
N-channel enhancement mode field-... |
| Description |
N-channel TrenchMOS intermediate level FET N沟道 TrenchMOS 中间级场效应
N-channel enhancement mode field-effect transistor
From old datasheet system
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| File Size |
156.22K /
13 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N03S2L-04 SPB80N03S2L-04 SPI80N03S2L-04
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| OCR Text |
...n ID
P- TO262 -3-1 P- TO263 -3-2
30 3.9 80
P- TO220 -3-1
V m A
* Enhancement mode * Logic Level * Excellent Gate Charge x R DS(on...04 SPB80N03S2L-04 SPI80N03S2L-04
Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1
Ordering Co... |
| Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 4.2 mOhm
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL
OptiMOS Power-Transistor
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| File Size |
417.49K /
8 Page |
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ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STP80NF03L-04 STP80NF03 -STP80NF03
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| OCR Text |
... ORIENTED CHARACTERIZATION
3 1 2
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Si...04
THERMAL DATA
R thj -case
Rthj -amb
R thc-sink Tl
Thermal Resistance Junction-case Max Th... |
| Description |
N - CHANNEL POWER MOSFET
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Metal; Series:PC C-26482 Series I; No. of Contacts:3; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle
N-CHANNEL 30V - 0.0034 ohm - 80A TO-220 STripFET POWER MOSFET
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| File Size |
48.67K /
6 Page |
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VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
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| Part No. |
SUM110N04-04
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| OCR Text |
...28 0.0035 0.0045 0.006 S W 40 V 2 4 100 1 50 250 A m mA nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Input Capac...04
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250 VGS = 10 t... |
| Description |
N-Channel 40-V (D-S) 175C MOSFET
N-Channel 40-V (D-S) 175C MOSFET
N-Channel 40-V (D-S) 175°C MOSFET
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| File Size |
39.19K /
5 Page |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF2021-04
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| OCR Text |
... Gain (dB)
25 20 15 10 5 0 0 2 4
MSG
MAG
6
8
10
12
14
16
Frequency (GHz)
Note: This device is early in the ...04
Value
12.5 V -5V to 0V 1.8 A 28 mA 31 dBm See note 3 150 C 320 C -65 to 150 C 2/ 2/ 3/ 4/ 2/
... |
| Description |
DC - 12 GHz Discrete power pHEMT
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| File Size |
117.63K /
8 Page |
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it Online |
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Price and Availability
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