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For 2-ton Found Datasheets File :: 27570    Search Time::2.5ms    
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    2SB791 2SB791K

HITACHI[Hitachi Semiconductor]
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Part No. 2SB791 2SB791K
OCR Text 2SB791(K) Silicon PNP Epitaxial Application Medium speed and power switching complementary pair with 2SD970(K) Outline TO-220AB ...ton VCE(sat) -0.2 -0.1 -0.1 -0.2 VCC = -30V IC = 500 IB1 = -500 IB2 Ta = 25C -3 -0.3 -1.0 C...
Description    Silicon PNP Epitaxial

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    2SB929 2SB929A 2SD1252A 2SD1252

PANASONIC[Panasonic Semiconductor]
Part No. 2SB929 2SB929A 2SD1252A 2SD1252
OCR Text 2 6.00.5 3.40.3 Unit: mm 1.00.1 For power amplification Complementary to 2SD1252 and 2SD1252A s Features q q q High forward cu...ton tstg tf IC = -1A, IB1 = - 0.1A, IB2 = 0.1A Conditions VCE = -60V, VBE = 0 VCE = -80V, VBE = 0 VC...
Description Silicon PNP epitaxial planar type(For power amplification)

File Size 48.48K  /  2 Page

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    2SB930 2SB930A 2SD1253A 2SD1253

PANASONIC[Panasonic Semiconductor]
Part No. 2SB930 2SB930A 2SD1253A 2SD1253
OCR Text 2 6.00.5 3.40.3 Unit: mm 1.00.1 For power amplification Complementary to 2SD1253 and 2SD1253A s Features q q q High forward cu...ton tstg tf IC = -4A, IB1 = - 0.4A, IB2 = 0.4A Conditions VCE = -60V, VBE = 0 VCE = -80V, VBE = 0 VC...
Description Silicon PNP epitaxial planar type(For power amplification)

File Size 48.02K  /  2 Page

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    2SB931 2SD1254

PANASONIC[Panasonic Semiconductor]
Part No. 2SB931 2SD1254
OCR Text 2 6.00.5 3.40.3 Unit: mm 1.00.1 s Features q q q q 1.50.1 1.5max. 1.1max. Low collector to emitter saturation voltage VC...ton tstg tf Conditions VCB = -100V, IE = 0 VEB = -5V, IC = 0 IC = -10mA, IB = 0 VCE = -2V, IC = - 0....
Description Silicon PNP epitaxial planar type(For power switching)

File Size 56.88K  /  3 Page

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    2SB932 2SD1255

PANASONIC[Panasonic Semiconductor]
Part No. 2SB932 2SD1255
OCR Text 2 6.00.5 3.40.3 Unit: mm 1.00.1 s Features q q q q 1.50.1 1.5max. 1.1max. Low collector to emitter saturation voltage VC...ton tstg tf IC = -1A, IB1 = - 0.1A, IB2 = 0.1A Conditions VCB = -100V, IE = 0 VEB = -5V, IC = 0 IC =...
Description Silicon PNP epitaxial planar type(For power switching)

File Size 56.95K  /  3 Page

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    2SB933 2SD1256

PANASONIC[Panasonic Semiconductor]
Part No. 2SB933 2SD1256
OCR Text 2 6.00.5 3.40.3 Unit: mm 1.00.1 s Features q q q q 1.50.1 1.5max. 1.1max. Low collector to emitter saturation voltage VC...ton tstg tf IC = -2A, IB1 = - 0.2A, IB2 = 0.2A Conditions VCB = -100V, IE = 0 VEB = -5V, IC = 0 IC =...
Description Silicon PNP epitaxial planar type(For power switching)

File Size 56.77K  /  3 Page

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    2SB934

PANASONIC[Panasonic Semiconductor]
Part No. 2SB934
OCR Text 2 6.00.5 3.40.3 Unit: mm 1.00.1 s Features q q q q 1.50.1 1.5max. 1.1max. Low collector to emitter saturation voltage VC...ton tstg tf IC = -3A, IB1 = - 0.3A, IB2 = 0.3A Conditions VCB = -100V, IE = 0 VEB = -5V, IC = 0 IC =...
Description Silicon PNP epitaxial planar type

File Size 56.81K  /  3 Page

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    2SB935 2SB935A

PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
Part No. 2SB935 2SB935A
OCR Text 2 6.00.5 3.40.3 Unit: mm 1.00.1 s Features q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching N type...ton tstg tf IC = -2A, IB1 = -66mA, IB2 = 66mA Conditions VCB = -40V, IE = 0 VCB = -50V, IE = 0 VEB =...
Description Silicon PNP epitaxial planar type(For low-voltage switching)

File Size 56.85K  /  3 Page

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    2SB936 2SB936A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB936 2SB936A
OCR Text 2 6.00.5 3.40.3 Unit: mm 1.00.1 s Features q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching N type...ton tstg tf IC = -3A, IB1 = - 0.1A, IB2 = 0.1A Conditions VCB = -40V, IE = 0 VCB = -50V, IE = 0 VEB ...
Description Silicon PNP epitaxial planar type(For low-voltage switching)

File Size 57.13K  /  3 Page

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    2SB937 2SB937A 2SD1260A 2SD1260

PANASONIC[Panasonic Semiconductor]
Part No. 2SB937 2SB937A 2SD1260A 2SD1260
OCR Text ...260A 10.00.3 Unit: mm 8.50.2 6.00.5 3.40.3 1.00.1 q q q High foward current transfer ratio hFE High-speed switching N type packag...ton tstg tf IC = -2A, IB1 = -8mA, IB2 = 8mA C Conditions VCB = -60V, IE = 0 VCB = -80V, IE = 0 V...
Description Silicon PNP epitaxial planar type Darlington(For power amplification and switching)

File Size 63.13K  /  2 Page

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