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DYNEX[Dynex Semiconductor]
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| Part No. |
MP03XXX330-12 MP03XXX330 MP03XXX330-08 MP03XXX330-10
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| OCR Text |
...
PACKAGE OUTLINE
MP03/330 - 12 MP03/330 - 10 MP03/330 - 08
1200 1000 800
T(vj) = 130oC IDRM = IRRM = 30mA VDSM & VRSM = VDRM & VRR...250 200 0 1 ms 10 1 2 3 45 150 50
I2t value - (A2s x 103)
Cycles at 50Hz Duration
Fig. 4 Su... |
| Description |
Phase Control Dual SCR, SCR/Diode Modules
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| File Size |
122.00K /
10 Page |
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Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
MP03XXX190-12 MP03XXX190 MP03XXX190-08 MP03XXX190-10
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| OCR Text |
...
PACKAGE OUTLINE
MP03/190 - 12 MP03/190 - 10 MP03/190 - 08
T(vj) = 125oC IDRM = IRRM = 30mA VDSM & VRSM = VDRM & VRRM + 100V respecti...250 90 200 150 100 50 0 30 60 120 180
On-state power loss per device - (W)
0
50
100 150 ... |
| Description |
Phase Control Dual SCR, SCR/Diode Modules 相位控制双可控硅，SCR /二极管模
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| File Size |
107.46K /
10 Page |
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Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
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| Part No. |
FS14SM-12
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| OCR Text |
12
HIGH-SPEED SWITCHING USE
FS14SM-12
OUTLINE DRAWING
15.9MAX.
Dimensions in mm 4.5 1.5
r
5.0 2
2
19.5MIN.
4
20.0
...250 -55 ~ +150 -55 ~ +150 4.8
Unit V V A A W C C g
Feb.1999
Typical value
MITSUBISHI Nch P... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 14 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
48.55K /
4 Page |
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Fujitsu
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| Part No. |
JS-12-K
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| OCR Text |
...ofile and space saving--Height: 12.5 mm --Mounting space: 290 mm2 High sensitivity in small package --Operating power ............ 0.11 to 0...250 VAC 10 A 30 VDC/250 VAC, resistive 3A 250 VAC inductive (PF = 0.4) Pilot duty B 300, C150, Q300
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| Description |
ELECTROMECHANICAL RELAY SPDT 10A 12VDC 660Ohm PC Board
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| File Size |
153.77K /
5 Page |
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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
IXFH76N07-12 IXFH76N06-11 IXFH76N06-12 IXFH76N07-11 IXYSCORP-IXFH76N06-12
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| OCR Text |
12 IXFH 76 N07-11 IXFH 76 N07-12 60 V 60 V 70 V 70 V
ID25 76 A 76 A 76 A 76 A
RDS(on) 11 mW 12 mW 11 mW 12 mW
Preliminary data shee...250 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 40 A
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| Description |
HiPerFET Power MOSFETs 76 A, 60 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs 76 A, 70 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
HiPerFET Power MOSFETs 76 A, 70 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
HiPerFET Power MOSFETs 76 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
78.83K /
4 Page |
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it Online |
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