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NXP Semiconductors N.v.
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Part No. |
CGD1046HI
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Description |
1 GHz, 27 dB gain Gaas high output power doubler 40 MHz - 1003 MHz RF/MICROWavE NaRROW BaND high power aMPLIFIER
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File Size |
78.51K /
8 Page |
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CREE power
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Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-v nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-v nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-v nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-v nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-v nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-v nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-v nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-v nitride deposition
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File Size |
273.34K /
17 Page |
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UTC ROHM[Rohm]
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Part No. |
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC47261 2SC58241 2SC58661 2SC58761 2SD1383K1 2SD16641 2SD18981 2SD20981 2SD2114K1 2SD26721 2SK20941 2SK25031 2SK25041 2SK27151 2SK30181 2SK30191 2SK30501 2SK35411 4N60-Ta3-T 4N60-TF3-T 4N60L-Ta3-T
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Description |
-3a / -12v bipolar transistor -2a / -30v bipolar transistor high-gain amplifier Transistor (?32v, ?0.3a) General purpose transistor (50v, 0.15a) high-voltage amplifier Transistor (120v, 50ma) high-Frequency amplifier Transistor (11v, 50ma, 3.2GHz) power transistor (60v, 3a) Medium power transistor (60v, 2a) Medium power transistor (60v, 0.5a) high-gain amplifier Transistor (32v , 0.3a) Medium power Transistor (32v, 1a) power Transistor (80v, 1a) Low vCE(sat) transistor (strobe flash) high-current Gain Medium power Transistor (20v, 0.5a) Low frequency amplifier 4v Drive Nch MOS FET 10v Drive Nch MOS FET 2.5v Drive Nch MOS FET 4 amps, 600 volts N-CHaNNEL power MOSFET
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File Size |
93.04K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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