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  0.8a Datasheet PDF File

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    IPA65R225C7

Infineon Technologies AG
Part No. IPA65R225C7
OCR Text ...r ipa65r225c7 datasheet rev.2.0 final powermanagement&multimarket 2 650vcoolmos?c7powertransistor ipa65r225c7 rev.2.0,2013-10-...8a; v dd =50v; see table 10 avalanche energy, repetitive e ar - - 0.24 mj i d =4.8a; v dd =50v; see ...
Description high power thyristor diode

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    CHM4936JPT

Chenmko Enterprise Co. Ltd.
Part No. CHM4936JPT
OCR Text ...transistor v o l t a g e 3 0 v o l t s c u r r e n t 5.8 ampere a p p l i c a t i o n f e a t u r e * h i g h d e n s i ...8a r ds(on) static drain-source on-resistance m w vgs=10v, id=5.8a switching characteristics q gs...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

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    AOT8N80 AOTF8N80

Alpha & Omega Semiconductors
Alpha & Omega Semicondu...
Part No. AOT8N80 AOTF8N80
OCR Text ...haracteristics 300 -55 to 150 2.0 0.4 0.51 -- units c/w 65 0.5 65 2.5 rev0: jun 2012 www.aosmd.com page 1 of 6 ...8a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-on rise time reverse transfer capacita...
Description 800V, 7.4A N-Channel MOSFET

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    P6KE200A P6KE47A P6KE51A P6KE30A P6KE56A P6KE33A P6KE75A P6KE8.2A P6KE22A P6KE120A P6KE12A P6KE110A P6KE11A P6KE100A P6K

Motorola Mobility Holdings, Inc.
Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. P6KE200A P6KE47A P6KE51A P6KE30A P6KE56A P6KE33A P6KE75A P6KE8.2A P6KE22A P6KE120A P6KE12A P6KE110A P6KE11A P6KE100A P6KE10A P6KE150A P6KE15A P6KE130A P6KE13A P6KE43A P6KE62A P6KE91A P6KE68A P6KE6.8A P6KE180A P6KE160A P6KE170A P6KE39A P6KE36A P6KE16A ON2770 P6KE7.5A P6KE18A P6KE20A P6KE24A P6KE27A P6KE82A P6KE9.1A P6KE68-200-D
OCR Text ...rature Coefficient of VBR (%/C) 0.057 0.061 0.065 0.068 0.073 0.075 0.078 0.081 @ IT (mA) 10 10 10 1 1 1 1 1 P6KE6.8A P6KE7.5A P6KE8.2A P6KE9.1A P6KE10A P6KE11A P6KE12A P6KE13A P6KE15A P6KE16A P6KE18A P6KE20A P6KE22A P6KE24A P6KE...
Description ZENER OVERVOLTAGE TRANSIENTSUPPRESSORS 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Octal Buffers and Line Drivers with 3-State Outputs 20-SOIC -40 to 85
Octal D-Type Registers with 3-State Outputs 20-SOIC -40 to 85
3-V to 5.5-V Multichannel RS-232 1-MBit/s Line Driver/Receiver 28-SOIC -40 to 85
Single Output LDO, 200mA, Fixed(1.8V), Low Quiescent Current, Low Noise, High PSRR 5-SOT -40 to 85
Octal Line Driver/MOS Driver with 3-State Outputs 20-SSOP/QSOP -40 to 85
Single Output LDO, 1.0A, Fixed(2.8V), Low Noise, High PSRR 6-SOT-223 -40 to 125
1.5 GHz to 2.5 GHz Quadrature Modulator 16-VQFN -40 to 85
Low-Noise Fast-Transient-Response 1.5-A LDO Regulator 5-DDPAK/TO-263 -40 to 125
2.5-V 460-Kbps RS-232 Transceiver With /-15-kV ESD Protection 20-TSSOP 0 to 70
From old datasheet system
Zener Transient Voltage Suppressors Undirectional and Bidirectional

File Size 81.70K  /  7 Page

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    AOT8N65

Alpha & Omega Semiconductors
Part No. AOT8N65
OCR Text ...case for 5 seconds 650 i d 5 50.0 208 5.2 8* 5.2* the aot8n65 & aotf8n65 have been fabricated using an advanced high voltage mosfet process...8a,di/dt=100a/ m s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds...
Description 650V, 8A N-Channel MOSFET

File Size 151.23K  /  6 Page

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    2SC2788

Savantic, Inc.
Part No. 2SC2788
OCR Text ...eakdown voltage i c =1ma ;i e =0 500 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7 v v ce (sat) collector-emitter saturation voltage i c =4a ;i b =0.8a 1.0 v v be ( sat) base-emitter saturation voltage i c ...
Description Silicon NPN Power Transistors

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    SSG4935P

SeCoS Halbleitertechnologie GmbH
Part No. SSG4935P
OCR Text ...10v -7.8 35@v gs = -4.5v -6.0 maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit ...8a - 28 35 v gs = -4.5v, i d = -6.0a forward transconductance a g fs - 22 - s v ds = -10v, i d...
Description P-Ch Enhancement Mode Power MOSFET

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    New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
Part No. D45VH4 D45VH1 D45VH10 D45VH7
OCR Text ...1' ^ ? ? mm min 15.70 9.90 4.20 0.70 4.98 2.70 0.44 13.20 1 10 2.70 2.50 1.29 6.45 8.66 max 15.90 10.10 4.40 0.90 j.ou 5.18 2.90 0.46 13.40 ...8a;ib=-0.8a lc=-15a;lb=-3a;tc=100t: ic=-8a;ib=-0.8a ic=-8a;ib=-0.8a;tc=100c vce=ratedvce;vbe(om=-4v ...
Description Silicon PNP Power Transistors

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    SSG8N10

SeCoS Halbleitertechnologie GmbH
Part No. SSG8N10
OCR Text ... min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d 0 8 l 1.35 1.75 e 0.40 0.90 ...8a , 100v , r ds(on) 48m n-ch enhancement mode power mosfet 25-apr-2013 rev. a page 2 of ...
Description N-Ch Enhancement Mode Power MOSFET

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    2SB1420

SANKEN[Sanken electric]
Part No. 2SB1420
OCR Text ...100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 A mA 19.90.3 4.0 V a b o3.20.1 V 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0....8A (Ca e Te mp) -3m A p) ) -2 -2.4 Collector-Emitter Voltage V C E( V) ...
Description Silicon PNP Epitaxial Planar Transistor(Chopper Regulator/ DC Motor Driver and General Purpose)
Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, DC Motor Driver and General Purpose)

File Size 24.20K  /  1 Page

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