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  0.5-12ghz Datasheet PDF File

For 0.5-12ghz Found Datasheets File :: 319    Search Time::1.437ms    
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    FHX13X FHX14X

Eudyna Devices Inc
Part No. FHX13X FHX14X
OCR Text 0.45dB (Typ.)@f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg 0.15m, Wg = 200m Gold Gate Metallization for High Reliability ...5 -3.0 180 -65 to +175 175 Unit V V mW C C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=...
Description GaAs FET & HEMT Chips

File Size 59.15K  /  4 Page

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    2SK1645

Sanyo Semicon Device
Part No. 2SK1645
OCR Text ...unit : mm 2134A [2SK1645] 1.9 0.95 0.95 0.4 4 3 0 to 0.1 * Lowest phase noise. Super miniaturized plastic-mold package (CP4). The ch...5 0.16 1 2 0.95 0.85 2.9 0.5 0.6 1.5 2.5 0.8 1 : Gate 2 : Source 3 : D...
Description For C to X-band Local Oscillator and Amplifier

File Size 38.15K  /  4 Page

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    MGF1451A

Mitsubishi Electric Semiconductor
Part No. MGF1451A
OCR Text ...A f=12GHz -- MIN. -8 -8 -35 -0.3 9.0 11.0 -- Limits TYP. ---60 -1.4 10.5 13.0 -- MAX --10 120 -3.5 --420 Unit V V uA mA V dB dBm /W MITSUBISHI (1/4) Decl/2006 Dec./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1451A ...
Description Low Noise MES FET

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    MGF1601B1 MGF1601B

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF1601B1 MGF1601B
OCR Text ... Unit:millimeters 4MIN. 0.50.15 FEATURES * High output power at 1dB gain compression P1dB=21.8dBm(TYP.) * High linear power gain...5 1.2 175 -65 to +175 Unit V V mA mA mA W C C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol V(BR...
Description MICROWAVE POWER GaAs FET

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    MGF1801B1 MGF1801B

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF1801B1 MGF1801B
OCR Text ... Unit:millimeters 4MIN. 0.50.15 FEATURES * High output power at 1dB gain compression P1dB=23dBm(TYP.) * High linear power gain G...5 1.2 175 -65 to +175 Unit V V mA mA mA W C C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol V(BR...
Description MICROWAVE POWER GaAs FET

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    MGF4941AL

Mitsubishi Electric Semiconductor
Part No. MGF4941AL
OCR Text ...noise figure @ f=12GHz NFmin. = 0.35dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.) Fig.1 APPLICATION L to K band low noi...5 0.35 MAX -50 60 -1.5 -0.5 Unit V A mA V dB dB MITSUBISHI (1/6) 18/May/2007 MITSUBISHI...
Description SUPER LOW NOISE InGaAs HEMT

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    MGF4951A04 MGF4952A MGF4951A

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF4951A04 MGF4952A MGF4951A
OCR Text ...e @ f=12GHz MGF4951A : NFmin. = 0.40dB (Typ.) MGF4952A : NFmin. = 0.60dB (Typ.) High associated gain @ f=12GHz Gs = 12.0dB (Typ.) Fig.1 ...5 --0.50 0.80 Unit V A mA V mS dB dB dB MITSUBISHI (1/5) June/2004 June/2004 MITSUBI...
Description SUPER LOW NOISE InGaAs HEMT

File Size 180.71K  /  5 Page

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    MAX7384 MAX7384A MAX7384B MAX7384C

Maxim Integrated Products
Part No. MAX7384 MAX7384A MAX7384B MAX7384C
OCR Text 0; 11/04 Silicon Oscillator with Low-Power Frequency Switching and Reset Output General Description The MAX7384 dual-speed silicon osci...5.5V Operation High-Speed Oscillator from 10MHz to 16MHz Low-Speed 32kHz Oscillator Glitch-Free Clo...
Description Silicon Oscillator with Low-Power Frequency Switching and Reset Output

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    EPA018A-70

List of Unclassifed Manufacturers
ETC
Excelics Semiconductor, Inc.
Part No. EPA018A-70
OCR Text ...CAL POWER GAIN AT 18GHz TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASS...5 11.0 TYP 20.0 20.0 13.5 11.0 45 0.75 12.5 55 60 -1.0 -15 -14 480* o MAX UNIT dBm dB % dB dB...
Description High Efficiency Heterojunction Power FET

File Size 19.02K  /  2 Page

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