0.280 pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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0.280 Datasheet PDF File

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				International Rectifier
Part No.	IRF2807
OCR Text	...unction-to-Ambient Typ. --- 0.50 --- Max. 0.65 --- 62 Units C/W www.irf.com 1 3/16/01 IRF2807 Electrical Characterist...280 S p-n junction diode. --- --- 1.2 V TJ = 25C, IS = 43A, VGS = 0V --- 100 150 ns TJ = 25C, IF = ...
Description	Power MOSFET(Vdss=75V, Id=82A?) Power MOSFET(Vdss=75V, Id=82A)
File Size	149.88K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3007
OCR Text	... VDSS = 75V G S RDS(on) = 0.0126 ID = 75A Description Specifically designed for Automotive applications, this design of HEXFET(R) ...280 946 See Fig.12a, 12b, 15, 16 -55 to + 175 Units A W W/C V mJ A mJ C 300 (1.6mm from ca...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	146.42K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3515L IRF3515S
OCR Text	...l VDSS 150V RDS(on) max 0.045 ID 41A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanc...280 Max. Units Conditions --- S VDS = 50V, ID = 25A 107 ID = 25A 23 nC VDS = 120V 65 VGS = 10V, See ...
Description	Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A) Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)
File Size	122.87K / 10 Page	View it Online	Download Datasheet

				VISAY[Vishay Siliconix]
Part No.	IRF36 IRF-36
OCR Text	...2 2.52 2.52 2.52 2.52 2.52 2.52 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 0.796 SELFRES. FREQ. MIN. (MHz) 320 320 320 320 300 300 300 280 250 230 210 172 140 140 131 121 110 100 94 86 80 74 68 53 45 34 20 14 9.9 7.6 ...
Description	Inductors Epoxy Conformal Coated, Axial Leaded
File Size	113.79K / 1 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3703 IRF3703PBF
OCR Text	...0 100 1000 230 3.8 1.5 20 5.0 -55 to + 175 Units A W W/C V V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Cas...280 320 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capaci...
Description	30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
File Size	93.04K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3706 IRF3706L IRF3706S
OCR Text	... Max. 20 12 77 54 280 88 44 0.59 -55 to + 175 Units V V A W W W/C C = 25C = 100C = 25C = 100C TJ , TSTG Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambien...
Description	Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)
File Size	143.52K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3711 IRF3711L IRF3711S
OCR Text	...Max. 20 20 110 69 440 120 3.1 0.96 -55 to + 150 Units V V A W W W/C C Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-Ca...280 Max. Units Conditions --- S VDS = 16V, ID = 30A 44 ID = 15A --- nC VDS = 10V --- VGS = 4.5V --- ...
Description	Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?? Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?
File Size	243.87K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	...l D VDSS = -55V RDS(on) = 0.06 G ID = -31A S Fifth Generation HEXFETs from International Rectifier utilize advanced processi...280 -16 11 -5.8 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal ...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...d D VDSS = -55V RDS(on) = 0.06 G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize adva...280 -16 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7106 IRF7106TR
OCR Text	...wer dissipation of greater than 0.8W is possible in a typical PCB mount application. S1 G1 S2 G2 D1 D1 D2 D2 N-Ch VDSS 20V P-Ch ...280 -- 260 -- 250 -- 62 -- 86 -- Units V V/C V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ...
Description	20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
File Size	157.44K / 7 Page	View it Online	Download Datasheet

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