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  0.005 a Datasheet PDF File

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    INA-01170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. INa-01170
OCR Text ...z dB Min. 30 Typ. 32.5 0.5 500 39 1.6:1 1.5:1 Max. 35 dB dBm dBm psec V mV/C 4.0 2.0 11 23 200 5.5 +10 2.5 7.0 N...005 mm .xx = 0.13 .495 .030 12.57 .76 .035 .89 6-89 ...
Description Low Noise, Cascadable Silicon Bipolar MMIC amplifier
Low Noise/ Cascadable Silicon Bipolar MMIC amplifier

File Size 43.00K  /  3 Page

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ...RF1010ZS Max. 94 66 75 360 140 0.90 20 TO-262 IRF1010ZL Units a absolute Maximum Ratings Parameter ID @ TC = 25C Continuous Drain...005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 ,...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220aB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
aUTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804S-7P
OCR Text ... j Parameter Typ. --- 0.50 Max. 0.50 --- 62 40 Units C/W Case-to-Sink, Flat, Greased Surface Junction-to-ambient j ...005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 ,...
Description aUTOMOTIVE MOSFET

File Size 260.32K  /  10 Page

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    IRF2804 IRF2804L IRF2804S

IRF[International Rectifier]
Part No. IRF2804 IRF2804L IRF2804S
OCR Text ...nt, steady state)j Typ. --- 0.50 --- --- Max. 0.45 --- 62 40 Units C/W HEXFET(R) is a registered trademark of International R...005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Tran...
Description 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
40V Single N-Channel HEXFET Power MOSFET in a TO-220aB package

File Size 273.77K  /  12 Page

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    IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS
OCR Text ... k Parameter Typ. --- 0.50 --- --- Max. 0.45 --- 62 40 Units C/W Case-to-Sink, Flat, Greased Surface Junction-to-ambien...005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal I...
Description aUTOMOTIVE MOSFET 汽车MOSFET
75V Single N-Channel HEXFET Power MOSFET in a TO-220aB package
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 359.66K  /  12 Page

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    IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text ... Max. 20 20 77 64 308 87 61 0.59 -55 to + 175 Units V V a W W mW/C C Thermal Resistance Parameter RJC RCS RJa RJa Junction-to-C...005 0 50 100 150 200 250 300 ID , Drain Current ( a ) 0.006 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, ...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220aB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77a?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77a)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77a)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77a?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77a)
CONNECTOR, PICOFLEX, 4WaY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77a条?
TRaNSISTOR | MOSFET | N-CHaNNEL | 20V V(BR)DSS | 77a I(D) | TO-263aB

File Size 123.62K  /  10 Page

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    IRF3708 IRF3708L IRF3708S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3708 IRF3708L IRF3708S
OCR Text ... Max. 30 12 62 52 248 87 61 0.58 -55 to + 175 Units V V a W W W/C C Thermal Resistance Parameter RJC RCS RJa RJa Junction-to-Ca...005 0 50 100 150 200 250 300 ID , Drain Current ( a ) 0.011 0.009 ID = 31a 0.007 2.0 3.0...
Description Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62a) 功率MOSFET(减振钢板基本\u003d 30V的,的Rdson)最大值\u003d 12mohm,身份证\u003d 62a条)
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62a)

File Size 137.00K  /  10 Page

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    IRF3717

IRF[International Rectifier]
Part No. IRF3717
OCR Text ... Max. 20 20 20 16 160 2.5 1.6 0.02 -55 to + 150 Units V c a W W/C C Power Dissipation Power Dissipation Linear Derating Facto...005 0.0001 0.001 0.01 0.1 +T a 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig ...
Description HEXFETPower MOSFET

File Size 246.14K  /  10 Page

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ...ion-to-ambient Typ. Max. 0.45 --- 62 40 Units C/W Junction-to-ambient (PCB Mount) j i i --- 0.50 --- --- www.irf.c...005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 ,...
Description aUTOMOTIVE MOSFET

File Size 358.50K  /  12 Page

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    K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text ... History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGa dummy ball is changed. (before) DNU --> (after) N.C 2. add t...005-0.001 +0.003 1.20 0.047MaX K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9...
Description 32M x 8 Bit / 16M x 16 Bit NaND Flash Memory
512Mb/256Mb 1.8V NaND Flash Errata
32M x 8 Bit , 16M x 16 Bit NaND Flash Memory

File Size 679.73K  /  42 Page

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