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For .4mh Found Datasheets File :: 318 Search Time::3.797ms
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				IRF[International Rectifier]
Part No.	IRFMA450 IRFMA540
OCR Text	...= 50V, starting TJ = 25C, L= 10.4mh Peak IL =12A, VGS = 10V ISD 12A, di/dt 130A/s, Pulse width 300 s; Duty Cycle 2% VDD 500V, TJ 150C Case Outline and Dimensions --Tabless TO-254AA 0.13 [.005] A 13.84 [.545] 13.59 [.535] 6.6...
Description	500V Single N-Channel Hi-Rel MOSFET in a TO-254AA package POWER MOSFET THRU-HOLE (Tabless TO-254AA)
File Size	162.52K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier] http://
Part No.	IRHNJ53034 IRHNJ57034 IRHNJ58034 IRHNJ54034 JANSF2N7480U3 JANSG2N7480U3 JANSH2N7480U3 JANSR2N7480U3
OCR Text	... = 50V, starting TJ = 25C, L= 0.4mh Peak IL = 22A, VGS = 12V A ISD 22A, di/dt 234A/s, VDD 60V, TJ 150C A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation...
Description	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) 抗辐射功率MOSFET表面贴装系统（SMD - 0.5
File Size	187.03K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFSL11N50A
OCR Text	...SS Starting TJ = 25C, L = 6.4mh RG = 25, IAS = 11A. (See Figure 12) ISD 11A, di/dt 185A/s, VDD V(BR)DSS, TJ 175C 2 www.irf.com IRFSL11N50A 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Dra...
Description	500V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET
File Size	106.30K / 8 Page	View it Online	Download Datasheet

				Fairchild
Part No.	FQA70N10
OCR Text	...m junction temperature 2. L = 0.4mh, IAS = 70A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 70A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating tempe...
Description	TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,70A
File Size	633.03K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFP3710
OCR Text	...ns Starting TJ = 25C, L = 1.4mh RG = 25W , IAS = 28A. (See Figure 12) I 28A, di/dt 460A/s, VDD V(BR)DSS, SD TJ 175C 2 www.irf.com IRFP3710 1000 I , D rain-to-S ource C urrent (A ) D 100 I , D rain-to-S our...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.025W, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rdson）\u003d 0.025W，身份证\u003d 57A条） HEXFET? Power MOSFET Power MOSFET(Vdss=100V Rds(on)=0.025W Id=57A)
File Size	181.20K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRFS510 IRFS510A
OCR Text	...um Junction Temperature O 2 O L=4mH, I AS=5.6A, VDD=25V, RG=27 , Starting T J =25oC o 3 _ _ _ O ISD < 5.6A, di/dt < 250A/ s, V DD < BVDSS , Starting T J =25 C _ s, 4 O Pulse Test : Pulse Width = 250 Duty Cycle <2% 5 Essentially Independent...
Description	Advanced Power MOSFET
File Size	252.17K / 7 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	DN8695
OCR Text	...l VI=2.4V VCC=5V, Total VI=0V L=4mH, R=40, IO=600mA VH=60V, RL=45 VCC=5V, CL=15pF 50 5 5 -10 -100 min 2 0.8 2.2 10 10 1 45 50 typ max Unit V V V A A mA mA mA V s s s Characteristics Curve PD - Ta 30 25 Power Dissipation PD (W) ...
Description	9-circuit Darlington Driver Array (High Breakdown Voltage : 50V, Large Drive Current : 1.5A)
File Size	29.59K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL7Y1905C
OCR Text	...= 25 V, Starting TJ = 25C, L= 0.4mh Peak IAS = 10A, VGS =10V, RG= 25 ISD 10A, di/dt 230 A/s, Pulse width 300 s; Duty Cycle 2% VDD 50V, TJ 150C Case Outline and Dimensions -- TO-257AA A 10.66 [.420] 10.42 [.410] O 3.81 [.150]...
Description	HEXFET? Power MOSFET
File Size	101.00K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGT1S2N120 FN4696 HGTP2N120BN HGT1S2N120BNS HGTD2N120BNS
OCR Text	...n temperature. 2. ICE = 3A, L = 4mH, TJ = 25oC. 3. VCE(PK) = 840V, TJ = 125oC, RG = 51. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, ...
Description	XC9536-7PC44I - NOT RECOMMENDED for NEW DESIGN 12A 1200V NPT Series N-Channel IGBT From old datasheet system 12A, 1200V, NPT Series N-Channel IGBT
File Size	84.61K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HGT1S2N120 HGT1S2N120CNS
OCR Text	...n temperature. 2. ICE = 3A, L = 4mH. 3. VCE(PK) = 840V, TJ = 125oC, RG = 51 . Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V V...
Description	45A, 600V, UFS Series N-Channel IGBT 13A 1200V NPT Series N-Channel IGBT
File Size	121.47K / 8 Page	View it Online	Download Datasheet

For .4mh Found Datasheets File :: 318 Search Time::3.797ms
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