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write erase Datasheet PDF File

For write erase Found Datasheets File :: 12714 Search Time::2.813ms
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				MICROCHIP[Microchip Technology]
Part No.	24C02C 24C02C-EP 24C02C-EST 24C02C-IP 24C02C-ISN 24C02C-IST 24C02C-P 24C02C-SN 24C02C-ST 24C02C-ESN
OCR Text	... 256 bytes (256 x 8) * Hardware write protection for upper half of array * 2-wire serial interface bus, I2C compatible * 100 kHz and 400 kHz...erase) * Fast 1 mS write cycle time for byte or page mode * Address lines allow up to eight devices ...
Description	2K 5.0V I 2 C ⑩ Serial EEPROM 2K 5.0V I 2 C Serial EEPROM
File Size	95.77K / 12 Page	View it Online	Download Datasheet

				Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
Part No.	AM29LV160BT-90WCC AM29LV160BT-90EE AM29LV160BT-90SC AM29LV160BT-70REC AM29LV160BB-120EC
OCR Text	...range: 2.7 to 3.6 volt read and write operations for battery-powered applications regulated voltage range: 3.0 to 3.6 volt read and write...erase current n flexible sector architecture one 16 kbyte, two 8 kbyte, one 32 kbyte, and thirty-o...
Description	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 1M X 16 FLASH 3V PROM, 90 ns, PDSO44 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
File Size	767.24K / 49 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. 意法半导 ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
Part No.	24C02 ST25C02B1TR ST25C02B3TR ST25C02B5TR ST25C02B6TR ST25C02M1TR ST25C02M3TR ST25C02M5TR ST25C02M6TR ST24C02 ST24C02B1TR ST24C02B3TR ST24C02B5TR ST24C02B6TR ST24C02M1TR ST24C02M3TR ST24C02M5TR ST24C02M6TR ST24C02RB1TR ST24C02RB3TR ST24C02RB5TR ST24C02RB6TR ST24C02RM1TR ST24C02RM3TR ST24C02RM5TR ST24C02RM6TR ST24W02 ST24W02B1TR ST24W02B3TR ST24W02B5TR ST24W02B6TR ST24W02M1TR ST24W02M3TR ST24W02M5TR ST24W02M6TR ST25W02B1TR ST25W02B3TR ST25W02B5TR ST25W02B6TR ST25W02M1TR ST25W02M3TR ST25W02M5TR ST25W02M6TR ST24C02R ST24C02B1 ST24C02B3 ST24C02RB6 ST25W02 ST25C02
OCR Text	write CYCLES with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24x02 versions - 2.5V to 5.5V for ST25x02 versions - 1.8...erase/write cycles with a data retention of 40 years. The memories operate with a power supply value...
Description	IC MAX 7000 CPLD 32 44-PLCC I2C串行EEPROM SERIAL 2K (256 x 8) EEPROM 串行2K56 × 8）的EEPROM SERIAL 2K (256 x 8) EEPROM 串行2K256 × 8）的EEPROM Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:189; Package/Case:240-PQFP; Leaded Process Compatible:No; Number of Circuits:1728; Peak Reflow Compatible (260 C):No; Mounting Type:surface mount RoHS Compliant: No IC MAX 7000 CPLD 32 44-TQFP MOSFET, N, SO-8; Transistor type:MOSFET; Current, Id cont:4A; Resistance, Rds on:6.7R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak
File Size	143.96K / 16 Page	View it Online	Download Datasheet

				SPANSION
Part No.	S29AS008J
OCR Text	...nge: 1.65 to 1.95 volt read and write operations for battery-powered applications ? manufactured on 110 nm process technology ? secured sil...erase operations within that sector ? sectors can be locked in-system or via programming equipment ?...
Description	8 Megabit (1M x 8-Bit / 512K x 16-Bit) CMOS 1.8 Volt-Only Boot Sector Flash Memory
File Size	1,402.04K / 55 Page	View it Online	Download Datasheet

				Silicon Storage Technology, Inc
Part No.	SST39VF3201C
OCR Text	...m x16 ? single voltage read and write operations ? 2.7-3.6v ? superior reliability ? endurance: 100,000 cycles (typical) ? greater than 100 ...erase capability ? uniform 2 kword sectors ? block-erase capability ? flexible block architecture ? ...
Description	32 Mbit (x16) Multi-Purpose Flash Plus Active Current: 6 mA
File Size	381.71K / 37 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	24C04 ST25C04 ST25C04B1TR ST25C04B3TR ST25C04B5TR ST25C04B6TR ST25C04M1TR ST25C04M3TR ST25C04M5TR ST25C04M6TR ST24C04 ST24C04B1TR ST24C04B3TR ST24C04B5TR ST24C04B6TR ST24C04M1TR ST24C04M3TR ST24C04M5TR ST24C04M6TR ST25W04 ST25W04B1TR ST25W04B3TR ST25W04B5TR ST25W04B6TR ST25W04M1TR ST25W04M3TR ST25W04M5TR ST25W04M6TR ST24W04 ST24W04B1TR ST24W04B3TR ST24W04B5TR ST24W04B6TR ST24W04M1TR ST24W04M3TR ST24W04M5TR ST24W04M6TR 2435 ST24W04B3 ST24W04M1 -24C04
OCR Text	write Protection 1 MILLION erase/write CYCLES with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24x04 versions - 2.5V to 5.5V for ST25x04 versions HARDWARE write CONTROL VERSIONS: ST24W04 and ST25W04 PROGRAMMABLE write...
Description	KIT, NIOS FOR CYCLONE II; Kit contents:Nios II Development Board, Nios II IDE, Quartus II Web Edition design software, SOPC Builder system integration tool, Cables and accessories, Design examples and applications RoHS Compliant: Yes IC MAX 7000 CPLD 256 208-PQFP PowerPak; Charge, gate n-channel:27nC; Current, Idm pulse:40A; Depth, external:5.26mm; RoHS Compliant: Yes MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:80V; Case style:PowerPak SO-8; Current, Id cont:7.6A (ST2xxx) 4 Kbit Serial I2C Bus EEPROM with User-Defined Block write Protection From old datasheet system 4 Kbit Serial I 2 C Bus EEPROM with User-Defined Block write Protection 4KbitSerialI2CBusEEPROMwithUser-DefinedBlockwriteProtection
File Size	123.70K / 16 Page	View it Online	Download Datasheet

				Silicon Storage Technology, Inc
Part No.	SST31LF04103
OCR Text	...sram single 3.0-3.6v read and write operations concurrent operation ? read from or write to sram while erase/program flash superior reliability ? endurance: 100,000 cycles (typical) ? greater than 100 years data retention low power ...
Description	4 Mbit Flash 1 Mbit SRAM ComboMemory
File Size	321.43K / 26 Page	View it Online	Download Datasheet

				Eon Silicon Solution Inc.
Part No.	EN39SL160AH-70BAP EN39SL160AH-70BIP EN39SL160AL-70BIP EN39SL160AL-70NIP EN39SL160AL-90BIP EN39SL160AH-70NAP EN39SL160AH-90BAP EN39SL160AH-90NIP EN39SL160AL-90NIP EN39SL160AL-70NAP EN39SL160AL-90NAP EN39SL160AH-90NAP EN39SL160AL-70BAP EN39SL160AL-90BAP EN39SL160AH-70NIP EN39SL160AH-90BIP
OCR Text	...ge:1.65-1.95 volt for read and write operations. - ideal for battery-powered applications. ? high performance - access times as fast...erase current - 0.2 a typical standby current ? uniform sector architecture: - 512 sector...
Description	16 Megabit (1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
File Size	525.78K / 50 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	24C08 ST25C08 ST25C08B1TR ST25C08B3TR ST25C08B5TR ST25C08B6TR ST25C08M1TR ST25C08M3TR ST25C08M5TR ST25C08M6TR ST24W08B1TR ST24W08B3TR ST24W08B5TR ST24W08B6TR ST25W08B1TR ST25W08B3TR ST25W08B5TR ST25W08B6TR ST24C08 ST24C08B1TR ST24C08B3TR ST24C08B5TR ST24C08B6TR ST24C08M1TR ST24C08M3TR ST24C08M5TR ST24C08M6TR ST24W08 ST25W08M1TR ST25W08M3TR ST25W08M5TR ST25W08M6TR ST24W08M1TR ST24W08M3TR ST24W08M5TR ST24W08M6TR ST25W08
OCR Text	write Protection 1 MILLION erase/write CYCLES with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24x08 versions - 2.5V to 5.5V for ST25x08 versions HARDWARE write CONTROL VERSIONS: ST24W08 and ST25W08 PROGRAMMABLE write...
Description	IC ACEX 1K FPGA 100K 484-FBGA Pulse Width Modulation (PWM) Controller IC; Topology:Flyback, Forward; Control Mode:Current; Number of PWM Outputs:1; Input Voltage Primary Min:15V; Input Voltage Primary Max:200V; Duty Cycle Max:50% MOSFET, N POWERPAKMOSFET, N POWERPAK; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:150V; Case style:PowerPak SO-8; Current, Id (ST2xxx) 8 Kbit Serial I2C Bus EEPROM with User-Defined Block write Protection 8 Kbit Serial I 2 C Bus EEPROM with User-Defined Block write Protection 8KbitSerialI2CBusEEPROMwithUser-DefinedBlockwriteProtection
File Size	124.09K / 16 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST24C16B1TR ST24C16B3TR ST24C16B5TR ST24C16B6TR ST24C16M1TR ST24C16M3TR ST24C16M5TR ST24C16M6TR ST24W16 ST24W16B1TR ST24W16B3TR ST24W16B5TR ST24W16B6TR ST24W16M1TR ST24W16M3TR ST24W16M5TR ST24W16M6TR ST25W16 ST25W16B1TR ST25W16B3TR ST25W16B5TR ST25W16B6TR ST25W16M1TR ST25W16M3TR ST25W16M5TR ST25W16M6TR
OCR Text	write Protection 1 MILLION erase/write CYCLES, with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24x16 versions - 2.5V to 5.5V for ST25x16 versions HARDWARE write CONTROL VERSIONS: ST24W16 and ST25W16 TWO WIRE SERIAL...
Description	MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护 16 Kbit Serial I2C Bus EEPROM with User-Defined Block write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护 MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes (ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block write Protection 16/8/4/2/1KbitSerialICBusEEPROM
File Size	125.39K / 17 Page	View it Online	Download Datasheet

For write erase Found Datasheets File :: 12714 Search Time::2.813ms
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