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    SSRF03N80SL

SeCoS Halbleitertechnologie GmbH
Part No. SSRF03N80SL
OCR Text ... derate above 25c p d 0.31 w single pulse avalanche energy 1 e as 173 mj operating junction and storage temperature range t j...nov-2013 rev. a page 2 of 5 http://www.secosgmbh.com/ any changes of specification will not...
Description N-Ch Enhancement Mode Power MOSFET

File Size 580.20K  /  5 Page

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    MCNIX
Part No. MX29GL512E MX29GL512EH MX29GL512EL
OCR Text ...ctive low wp#/acc* hardware w rite protect/programming acceleration input ry/by# ready/busy output byte# selects 8 bits or...nov. 13, 2013 mx29gl512e h/l 5 block diagram control input logic program/erase high vol t age writ...
Description SINGLE VOLTAGE 3V ONLY FLASH MEMORY

File Size 1,180.73K  /  69 Page

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    AO4576

Alpha & Omega Semiconductors
Part No. AO4576
OCR Text ...r ds(on) (at v gs =10v) < 5.8m w r ds(on) (at v gs = 4.5v) < 9.8m w application 100% uis tested 100% r g tested 30v ? latest trench ...nov. 2012 www.aosmd.com page 1 of 5 ao4576 symbol min typ max units bv dss 30...
Description 30V N-Channel AlphaMOS

File Size 327.34K  /  5 Page

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    MX29GL512E MX29GL512EHMC10Q MX29GL512EHXFI10Q MX29GL512EHT2I10Q MX29GL512ELXFI10Q MX29GL512ELT2I10Q MX29GL512EHMC-10Q

Macronix International
Part No. MX29GL512E MX29GL512EHMC10Q MX29GL512EHXFI10Q MX29GL512EHT2I10Q MX29GL512ELXFI10Q MX29GL512ELT2I10Q MX29GL512EHMC-10Q
OCR Text ...ctive low wp#/acc* hardware w rite protect/programming acceleration input ry/by# ready/busy output byte# selects 8 bits or...nov. 13, 2013 mx29gl512e h/l 5 block diagram control input logic program/erase high voltage write ...
Description SINGLE VOLTAGE 3V ONLY FLASH MEMORY
DATASHEET

File Size 942.20K  /  69 Page

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    LITE-ON SEMICONDUCTOR CORP
Part No. LT4953C
OCR Text ...sipation t a =70 p d 1.3 w operating junction temperature t j 55 to 150 storage temperature range t stg 55 to 150 ...nov . 20 10 lt4953c symbol parameter limit min typ max unit static v gs(th...
Description 5.3 A, 30 V, 0.06 ohm, 2 CHANNEL, P-CHANNEL, Si, POwER, MOSFET

File Size 580.78K  /  6 Page

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    AON2809

Alpha & Omega Semiconductors
Part No. AON2809
OCR Text ... ds(on) (at v gs =-4.5v) < 68m w r ds(on) (at v gs =-2.5v) < 90m w r ds(on) (at v gs =-1.8v) < 118m w typical esd protection hbm...nov. 2012 www.aosmd.com page 1 of 5 free datasheet http:/// aon2809 symbo...
Description 12V Dual P-Channel MOSFET

File Size 246.79K  /  5 Page

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    Infineon Technologies
Part No. H30T90
OCR Text ...tion, t c = 25 c p tot 428 w operating junction temperature t j -40...+175 c storage temperature t stg -55...+175 soldering t...nov 08 thermal resistance parameter symbol conditions max. value unit characteristic igbt the...
Description IGBT

File Size 285.54K  /  12 Page

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    ACT631114

Active-Semi, Inc
Part No. ACT631114
OCR Text ...led drive 1 2 3 5 4 i n shdn s w g fb sot23-5 a ct6311 uc g act6311 innovative power tm - 3 - www.active-semi.com copyright ? 2012 active-semi, inc. rev 4, 15-nov-12 absolute maximum ratings parameter value unit in, shdn vo...
Description white LED/OLED Step-Up Converter

File Size 341.87K  /  11 Page

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    SI4190DY

Vishay Siliconix
Part No. SI4190DY
OCR Text ...steady state conditions is 80 c/w. so-8 sd sd sd gd 5 6 7 8 top v ie w 2 3 4 1 orderin g information: si4190dy-t1-ge3 (le...nov-10 vishay siliconix si4190dy new product notes: a. pulse test; pulse width ? 300 s, duty cycle...
Description N-Channel 100 V (D-S) MOSFET

File Size 269.20K  /  10 Page

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