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    SB073P150-W-AG SB073P150-W-AG_AL SB073P150-W-AG/AL

TRANSYS Electronics Limited
Part No. SB073P150-w-AG SB073P150-w-AG_AL SB073P150-w-AG/AL
OCR Text w-Ag/Al Schottky Barrier Diode wafer 73 Mils, 150 Volt, 5 Amp Data Sheet Features Oxide Passivated Junction Low forward Voltage 150 C Junction Operating Low Reverse Leakage Supplied as wafers Platinum Barrier 1. Solderable Surface...
Description Schottky Barrier Diode wafer 73 Mils, 150 Volt, 5 Amp

File Size 151.39K  /  1 Page

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    SB073P125-W-AG SB073P125-W-AG_AL SB073P125-W-AG/AL

TRANSYS Electronics Lim...
TRANSYS Electronics Limited
Part No. SB073P125-w-AG SB073P125-w-AG_AL SB073P125-w-AG/AL
OCR Text w-Ag/Al Schottky Barrier Diode wafer 73 Mils, 125 Volt, 5 Amp Data Sheet Features Oxide Passivated Junction Low forward Voltage 150 C Junction Operating Low Reverse Leakage Supplied as wafers Platinum Barrier 1. Solderable Surface...
Description Schottky Barrier Diode wafer 73 Mils, 125 Volt, 5 Amp

File Size 151.73K  /  1 Page

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    SB065C025-3-W-AG

TRANSYS Electronics Limited
Part No. SB065C025-3-w-AG
OCR Text w-Ag Schottky cr Barrier Diode wafer 65 Mils, 25 Volt, 3 Amp, 0.38VF. Data Sheet Features Oxide Passivated Junction Very Low forward Voltage 125 C Junction Operating Low Reverse Leakage Supplied as wafers Chromium Barrier >1000V ESD ...
Description Schottky cr Barrier Diode wafer 65 Mils, 25 Volt, 3 Amp, 0.38VF.

File Size 152.12K  /  1 Page

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    SB065C015-3-W-AG

TRANSYS Electronics Limited
Part No. SB065C015-3-w-AG
OCR Text w-Ag Schottky cr Barrier Diode wafer 65 Mils, 15 Volt, 3 Amp, 0.35VF. Data Sheet Features Oxide Passivated Junction Very Low forward Voltage 125 C Junction Operating Low Reverse Leakage Supplied as wafers Chromium Barrier >1000V ESD ...
Description Schottky cr Barrier Diode wafer 65 Mils, 15 Volt, 3 Amp, 0.35VF.

File Size 151.58K  /  1 Page

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    SB040P150-W-AG SB040P150-W-AL

TRANSYS Electronics Limited
Part No. SB040P150-w-AG SB040P150-w-AL
OCR Text w-Ag/Al Schottky Barrier Diode wafer 40 Mils, 150 Volt, 1 Amp Data Sheet Features Oxide Passivated Junction Low forward Voltage 150 C Junction Operating Low Reverse Leakage Supplied as wafers Platinum Barrier 1. Solderable Surface...
Description Schottky Barrier Diode wafer 40 Mils, 150 Volt, 1 Amp

File Size 151.19K  /  1 Page

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    Electronic Theatre Controls, Inc.
Part No. SB090P200-w-AG
OCR Text ... use or sale. sb090p200-w-ag/al schottky barrier diode wafer 90 mils, 20 0 volt, 8 amp 200 v rrm maximum repetitive rev...forward rectified current (2) a junction operating temperature range (2) t sg -65 to +150 maximum fo...
Description Schottky Barrier Diode wafer 90 Mils, 200 Volt, 8 Amp 肖特基二极管晶圆90米尔斯,200伏,8安培

File Size 150.02K  /  1 Page

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    FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. QTLP321C-w QTLP321Cw
OCR Text w C. 0.050 (1.25) C C 0.320 (8.12) 0.280 (7.12) C - CATHODE A - ANODE FEATURES * InGaN (Indium Gallium Nitride) technology * Fl...Forward Current Peak Forward Current (f = 100 Hz, Duty Factor = 1/10) Reverse Voltage Power Dissipat...
Description High Efficiency Red Surface Mount LED Lamp - Standard Bright 0603 (0.8 mm Height)
4 - PIN POwER LED

File Size 60.47K  /  3 Page

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    MACOM[Tyco Electronics]
Part No. MA4SPS552-w MA4SPS552 MA4SPS552-T
OCR Text ...e in moderate incident power (5 w C.w.) or higher incident peak power (200 w) series, shunt, or series-shunt switches. Small parasitic induc...Forward Current Reverse Voltage Operating Temperature Storage Temperature Junction Temperature Dissi...
Description Surface Mount Monolithic PIN Diode Chip

File Size 151.58K  /  6 Page

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    MACOM[Tyco Electronics]
Part No. MA4AGSBP907-w MA4AGSBP907 MA4AGSBP907-T
OCR Text ...ipated RF & DC Power 50 mw RF C.w. Incident Power +23 dBm C.w. Mounting Temperature +300 C for 10 seconds Notes: 1. Exceeding these limits may cause permanent damage. Ordering Information Part Number MA4AGSBP907 MA4AGSBP907-T MA4AGSBP90...
Description    AlGaAs Solder Bump Flip-Chip PIN Diode

File Size 123.06K  /  5 Page

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    FM3012-W-A01

Rectron Semiconductor
Part No. FM3012-w-A01
OCR Text ...tive or inductive load. fm3012 -w-a01 smc maximum r at ings (@ t a =25 o c unless otherwise noted) electrical characteristics (@t a =...forward rectified current at ambient temperature peak forward surge current 8.3 ms single half sine-...
Description SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER VOLTAGE 1200 Volts CURRENT 3.0 Amperes

File Size 549.33K  /  6 Page

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