| |
|
 |
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| Part No. |
JANSR2N7410 FN4500
|
| OCR Text |
...ty for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias * Dose Rate - Typically Survives 3E9 RAD (Si)/s at ...12V VGS = 0V to 2V VDD = 50V, ID = 3.5A TYP 0.520 7.6 2.2 4.3 MAX 5.0 4.0 25 250 100 200 2.21 0.600 ... |
| Description |
3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3.5A 100V 0.600 Ohm Rad Hard N-Channel Power MOSFET
3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
|
| File Size |
44.85K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| Part No. |
FSPL230D1 FSPL230F FSPL230F3 FSPL230F4 FSPL230R4 FSPL230R FSPL230R3
|
| OCR Text |
...ty for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 10V Off-Bias * Dose Rate - Typically Survives 3E9 RAD (Si)/s at...12V VDD = 100V, ID = 9A VGS = 0V to 20V VGS = 0V to 2V ID = 9A, VDS = 15V VDS = 25V, VGS = 0V, f = 1... |
| Description |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
| File Size |
80.46K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| Part No. |
FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 FSPYC260F3 FSPYC260R FSPYC260R3
|
| OCR Text |
...ty for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 10V Off-Bias * Dose Rate - Typically Survives 3E9 RAD (Si)/s at...12V, ID = 58A ID = 37A, VGS = 12V TC = 25oC TC = 125oC TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC ... |
| Description |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
| File Size |
82.56K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| Part No. |
FSPYE230D1 FSPYE230F FSPYE230F4 FSPYE230R4 FN4852 FSPYE230 FSPYE230F3 FSPYE230R FSPYE230R3
|
| OCR Text |
...ty for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 10V Off-Bias * Dose Rate - Typically Survives 3E9 RAD (Si)/s at...12V VDD = 100V, ID = 12A VGS = 0V to 20V VGS = 0V to 2V ID = 12A, VDS = 15V VDS = 25V, VGS = 0V, f =... |
| Description |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
|
| File Size |
82.63K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| Part No. |
FSYA450D FSYA450D1 FSYA450D3 FSYA450R4 FSYA450R1 FSYA450R3
|
| OCR Text |
...ty for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias * Dose Rate - Typically Survives 3E9 RAD (Si)/s at ...12V, ID = 11A ID = 7A, VGS = 12V TC = 25oC TC = 125oC TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC =... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 11 A, 500 V, 0.53 ohm, N-CHANNEL, Si, POWER, MOSFET
|
| File Size |
55.83K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| Part No. |
FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F FSPYE234F3 FSPYE234R FSPYE234R3
|
| OCR Text |
...ty for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 10V Off-Bias * Dose Rate - Typically Survives 3E9 RAD (Si)/s at...12V VDD = 125V, ID = 9A VGS = 0V to 20V VGS = 0V to 2V ID = 9A, VDS = 15V VDS = 25V, VGS = 0V, f = 1... |
| Description |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
| File Size |
78.32K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRFU24N15D IRFR24N15D
|
| OCR Text |
...95 m VGS = 10V, ID = 14A 5.0 V VDS = VGS, ID = 250A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS...12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
100
ID , Drain-to-Source Current (A)
ID , Drain... |
| Description |
SMPS MOSFET
|
| File Size |
112.97K /
11 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
