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For self-refresh Found Datasheets File :: 7304    Search Time::1.031ms    
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    M5M44800CJ M5M44800CJ-5 M5M44800CJ-5S M5M44800CJ-6 M5M44800CJ-6S M5M44800CJ-7 M5M44800CJ-7S M5M44800CTP-5 M5M44800CTP-5S

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. M5M44800CJ M5M44800CJ-5 M5M44800CJ-5S M5M44800CJ-6 M5M44800CJ-6S M5M44800CJ-7 M5M44800CJ-7S M5M44800CTP-5 M5M44800CTP-5S M5M44800CTP-6 M5M44800CTP-6S M5M44800CTP-7 M5M44800CTP-7S M5M44800TP-7S M5M44800TP-6S M5M44800TP-5S M5M44800TP-7 M5M44800TP-6 M5M44800TP-5 M5M44800CJSERIES
OCR Text ...n increase in system densities. Self or extended refresh current is low enough for battery back-up application. MITSUBISHI LSIs MITSUBISHI LSIs PIN CONFIGURATION (TOP VIEW) (5V)VCC 1 DQ1 2 DQ2 3 DQ3 4 DQ4 5 NC 6 W 7 9 RAS 8 A9 2...
Description FAST PAGE MODE 4194304-BIT (524288-WORD 8-BIT) DYNAMIC FAST PAGE MODE 4194304-BIT (524288-WORD BYBY 8-BIT) DYNAMIC RAM
FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM

File Size 201.22K  /  21 Page

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    HYM71V32D735HCT4 HYM71V32D735HCT4-H HYM71V32D735HCT4-K

Hynix Semiconductor
Part No. HYM71V32D735HCT4 HYM71V32D735HCT4-H HYM71V32D735HCT4-K
OCR Text ...hysical bank ? auto refresh and self refresh ? 4096 refresh cycles / 64ms ? programmable burst length and burst type - 1, 2, 4 or 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 ...
Description 32Mx72|3.3V|K/H|x18|SDR SDRAM - Registered DIMM 256MB

File Size 223.88K  /  14 Page

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    M5M4V16G50DFP-10 M5M4V16G50DFP-12 M5M4V16G50DFP-8 16MSGRAMFP

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M5M4V16G50DFP-10 M5M4V16G50DFP-12 M5M4V16G50DFP-8 16MSGRAMFP
OCR Text ...rolled by A9 - Auto Refresh and Self Refresh Capability - 2048 refresh cycles /32ms - LVTTL Interface - 100 pin QFP package with 0.65mm lead pitch Max. Frequency M5M4V16G50DFP - 8 M5M4V16G50DFP- 10 M5M4V16G50DFP- 12 125MHz 100MHz 83MHz CLK...
Description From old datasheet system
16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM

File Size 165.49K  /  33 Page

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    M5M4V4405CJ M5M4V4405CTP-6 M5M4V4405CTP-6S M5M4V4405CTP-7 M5M4V4405CTP-7S M5M4V4405TP-7S M5M4V4405TP-6S M5M4V4405TP-7 M5

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. M5M4V4405CJ M5M4V4405CTP-6 M5M4V4405CTP-6S M5M4V4405CTP-7 M5M4V4405CTP-7S M5M4V4405TP-7S M5M4V4405TP-6S M5M4V4405TP-7 M5M4V4405TP-6 M5M4V4405CJ-6 M5M4V4405CJ-6S M5M4V4405CJ-7 M5M4V4405CJ-7S M5M4V4405CJSERIES
OCR Text ...n increase in system densities. Self or extended refresh current is low enough for battery back-up application. PIN CONFIGURATION (TOP VIEW) DQ1 1 DQ2 2 W3 RAS 4 A9 5 26 VSS 25 DQ4 24 DQ3 23 CAS 22 OE FEATURES Type name M5M4V4...
Description EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC EDO (HYPER PAGE MODE) 4194304-BIT (1048576-WORD BY 4-BIT) DYNAMIC RAM
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM

File Size 291.91K  /  27 Page

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    M5M4V4S40CTP-12 M5M4V4S40CTP-15 4MX16SDRAMTP

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M5M4V4S40CTP-12 M5M4V4S40CTP-15 4MX16SDRAMTP
OCR Text ...rge controlled by A8 - Auto and self refresh - 1024 refresh cycles /16.4ms CLK - LVTTL Interface CKE - 400-mil, 50-pin Thin Small Outline Package /CS (TSOP II) with 0.8mm lead pitch /RAS Max. Frequency M5M4V4S40CTP-12 M5M4V4S40CTP-15 83M...
Description 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM
From old datasheet system

File Size 1,456.01K  /  45 Page

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    MB81F643242C MB81F643242C-10 MB81F643242C-60 MB81F643242C-70

FUJITSU[Fujitsu Media Devices Limited]
Part No. MB81F643242C MB81F643242C-10 MB81F643242C-60 MB81F643242C-70
OCR Text ...Power Down Mode Current (ICC2P) Self Refresh Current (ICC6) * * * * * Single +3.3 V Supply 0.3 V tolerance LVTTL compatible I/O interface 4 K refresh cycles every 64 ms Four bank operation Burst read/write operation and burst read/single...
Description 4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM

File Size 409.36K  /  56 Page

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    HYM71V32D755HCT4 HYM71V32D755HCT4-8 HYM71V32D755HCT4-S HYM71V32D755HCT4-P

Hynix Semiconductor
Part No. HYM71V32D755HCT4 HYM71V32D755HCT4-8 HYM71V32D755HCT4-S HYM71V32D755HCT4-P
OCR Text ...hysical bank ? auto refresh and self refresh ? 4096 refresh cycles / 64ms ? programmable burst length and burst type - 1, 2, 4 or 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 ...
Description 32Mx72|3.3V|P/S|x18|SDR SDRAM - Registered DIMM 256MB

File Size 224.12K  /  14 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4T56083QF-GCD5 K4T56083QF-ZCD5 K4T56043QF-GCD5 K4T56043QF-ZCD5
OCR Text ...ovides precharge power-down and self refresh operation (all banks idle), or active powe r-down (row active in any bank). cke is syn- chronous for power down entry and exit, and for self refresh entry. cke is asynchronous for self refresh ex...
Description 256Mb F-die DDR2 SDRAM
OSC 3.3V SMT 7X5 CMOS 256Mb的的F - DDR2内存芯片

File Size 479.59K  /  27 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4H560438E-ULAA K4H560838E-ULAA K4H560438E-UCAA K4H560838E-UCAA K4H560438E-ULB0 K4H560438E-ULA2 K4H560438E-ULB3 K4H560438E-UC/LAA K4H560838E-ULB3 K4H560438E-UCB3 K4H560438E-UCB0 K4H560838E-UCB3 K4H560438E-UC/LA2 K4H560438E-UC/LB0 K4H560438E-UC/LB3 K4H560438E-UCA2 K4H560838E-UC/LB0 K4H560838E-UC/LA2 K4H560838E-UC/LB3 K4H560838E-UCB0 K4H560838E-UC/LAA K4H560838E-UCA2 K4H560838E-ULA2
OCR Text ... masking only (x4, x8) ? auto & self refresh ? 7.8us refresh interv al(8k/64ms refresh) ? maximum burst refresh cycle : 8 ? 66pin tsop ii pb-free package ? rohs compliant *cl : cas latency operating frequencies b3(ddr333@cl=2.5) aa(ddr26...
Description 256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片与DDR SDRAM的规格铅66 TSOP-II免费(符合RoHS

File Size 298.78K  /  23 Page

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    http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560438D-GCA2 K4H561638D-GLB3 K4H560838D-GLB3 K4H561638D-GCA2 K4H561638D-GLB0 K4H560438D-GLB0 K4H560438D-GLB3 K4H560838D-GLB0 K4H560838D-GCB3 K4H560838D-GCA2 K4H561638D-GLA2
OCR Text ...or write masking only ? auto & self refresh ? 7.8us refresh interv al(8k/64ms refresh) ? maximum burst refresh cycle : 8 ? 60 ball fbga package key features operating frequencies *cl : cas latency - b3(ddr333) - a2(ddr266a) - b0(ddr26...
Description DIODE ZENER SINGLE 200mW 33Vz 0.05mA-Izt 0.05 0.05uA-Ir 25 SOD-323 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 500mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-123 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 200mW 30Vz 0.05mA-Izt 0.05 0.05uA-Ir 22.8 SOD-323 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 500mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-123 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 150mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-523 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 150mW 33Vz 0.05mA-Izt 0.05 0.05uA-Ir 25 SOD-523 3K/REEL 的DDR 256Mb
DIODE ZENER SINGLE 200mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-323 3K/REEL
DIODE ZENER SINGLE 200mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-323 3K/REEL
DIODE ZENER SINGLE 500mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-123 3K/REEL
DIODE ZENER SINGLE 200mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-323 3K/REEL

File Size 293.31K  /  26 Page

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