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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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Part No. |
K4T56083QF-GCD5 K4T56083QF-ZCD5 K4T56043QF-GCD5 K4T56043QF-ZCD5
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OCR Text |
...ovides precharge power-down and self refresh operation (all banks idle), or active powe r-down (row active in any bank). cke is syn- chronous for power down entry and exit, and for self refresh entry. cke is asynchronous for self refresh ex... |
Description |
256Mb F-die DDR2 SDRAM OSC 3.3V SMT 7X5 CMOS 256Mb的的F - DDR2内存芯片
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File Size |
479.59K /
27 Page |
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it Online |
Download Datasheet
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http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
K4H560438D-GCA2 K4H561638D-GLB3 K4H560838D-GLB3 K4H561638D-GCA2 K4H561638D-GLB0 K4H560438D-GLB0 K4H560438D-GLB3 K4H560838D-GLB0 K4H560838D-GCB3 K4H560838D-GCA2 K4H561638D-GLA2
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OCR Text |
...or write masking only ? auto & self refresh ? 7.8us refresh interv al(8k/64ms refresh) ? maximum burst refresh cycle : 8 ? 60 ball fbga package key features operating frequencies *cl : cas latency - b3(ddr333) - a2(ddr266a) - b0(ddr26... |
Description |
DIODE ZENER SINGLE 200mW 33Vz 0.05mA-Izt 0.05 0.05uA-Ir 25 SOD-323 3K/REEL 的DDR 256Mb DIODE ZENER SINGLE 500mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-123 3K/REEL 的DDR 256Mb DIODE ZENER SINGLE 200mW 30Vz 0.05mA-Izt 0.05 0.05uA-Ir 22.8 SOD-323 3K/REEL 的DDR 256Mb DIODE ZENER SINGLE 500mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-123 3K/REEL 的DDR 256Mb DIODE ZENER SINGLE 150mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-523 3K/REEL 的DDR 256Mb DIODE ZENER SINGLE 150mW 33Vz 0.05mA-Izt 0.05 0.05uA-Ir 25 SOD-523 3K/REEL 的DDR 256Mb DIODE ZENER SINGLE 200mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-323 3K/REEL DIODE ZENER SINGLE 200mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-323 3K/REEL DIODE ZENER SINGLE 500mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-123 3K/REEL DIODE ZENER SINGLE 200mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-323 3K/REEL
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File Size |
293.31K /
26 Page |
View
it Online |
Download Datasheet
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Price and Availability
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