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2SB1341 1405SPB AM150 AP89042 012B000 GRM18 P80NF06 3225T
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  rg-62 Datasheet PDF File

For rg-62 Found Datasheets File :: 9361    Search Time::4.719ms    
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    ST Microelectronics
Part No. STW15NK50Z
OCR Text ...onditions VDD = 250 V, ID = 7 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 400V, ID = 14 A, VGS = 10V Min. Typ. 20 23 76 15 40...62 15 13 11 28 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr I...
Description N-CHANNEL Power MOSFET

File Size 529.66K  /  14 Page

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    SPI20N65C3 SPP20N65C3 SPA20N65C3

INFINEON[Infineon Technologies AG]
Part No. SPI20N65C3 SPP20N65C3 SPA20N65C3
OCR Text ...on) Gate input resistance RG f=1MHz, open drain Page 2 2003-08-15 SPP20N65C3, SPA20N65C3 SPI20N65C3 Electrical Characteri...62.1 1.2 800 - Unit A V GS=0V, IF=IS V R=480V, IF=IS , diF/dt=100A/s - V ns C A A/s T...
Description Cool MOS??Power Transistor
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor
for lowest Conduction Losses & fastest Switching

File Size 280.61K  /  14 Page

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    FQPF18N20V2 FQP18N20V2

http://
FAIRCHILD[Fairchild Semiconductor]
Part No. FQPF18N20V2 FQP18N20V2
OCR Text ..., 5) VDD = 100 V, ID = 18 A, RG = 25 (Note 4, 5) -------- 16 133 38 62 20 5.6 10 40 275 85 135 26 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Dra...
Description 200V N-Channel MOSFET

File Size 790.39K  /  10 Page

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    NTD60N02R-1G NTD60N02R-001 NTD60N02R-35G NTD60N02R.1G NTD60N02R.35 NTD60N02R.35G NTD60N02RT4G

Rectron Semiconductor
Part No. NTD60N02R-1G NTD60N02R-001 NTD60N02R-35G NTD60N02R.1G NTD60N02R.35 NTD60N02R.35G NTD60N02RT4G
OCR Text ...0 Vdc, IL = 11 Apk, L = 1.0 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS RqJ...62 50 32 80 1.87 10.5 120 1.25 8.5 -55 to 175 60 Unit Vdc Vdc S C/W W A A A C/W W A C/W W A C mJ 4 D...
Description Power MOSFET 62 A, 25 V, N?Channel, DPAK

File Size 76.85K  /  8 Page

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    CM75RX-24A

Mitsubishi Electric Semiconductor
Part No. CM75RX-24A
OCR Text ...VCC = 600V, IC = 75A VGE = 15V, RG = 4.3 Inductive load (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) (IE = 75A) IE = 75A, VGE = 0V (Note. ...62 Unit mA V A V VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC ...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 222.03K  /  8 Page

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    CM100RX-24A CM100RX-24A09

Mitsubishi Electric Semiconductor
Part No. CM100RX-24A CM100RX-24A09
OCR Text ...CC = 600V, IC = 100A VGE = 15V, RG = 3.0 Inductive load (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) (IE = 100A) IE = 100A, VGE = 0V (Note...62 Unit mA V A V VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC ...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 221.40K  /  8 Page

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    IRG7U100HF12B

International Rectifier
Part No. IRG7U100HF12B
OCR Text ...c (a) v cc =600v,v ge =+/-15v, rg=15 ohm,t j =125c e on e off e rec 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 e (mj) rg ( ? ) v cc =600v,v ge =+/-15v, i c =100a,t j =125c e on e off e rec downloaded from: http:/// i...
Description 1200V 100A Ultra Fast IGBT Half-Bridge module packaged in POWIR 62 package

File Size 735.02K  /  6 Page

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    FQPF33N10

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. FQPF33N10
OCR Text ...4, 5) VDD = 50 V, ID = 33 A, RG = 25 (Note 4, 5) -------- 15 195 80 110 38 7.5 18 40 400 170 230 51 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous D...
Description 100V N-Channel MOSFET

File Size 590.13K  /  8 Page

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