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SGS Thomson Microelectronics
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| Part No. |
AN1266
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| OCR Text |
...ramming is not possible. a page pro- grams in approximately 200 m s and is usually about 512 (or 528) bytes long. the programming rate is about 0.5 m s per byte. multi-bit cell nand flash memories take longer to program, approximately 900 m... |
| Description |
BENCHMARKING FLASH NOR AND FLASH NAND MEMORIES
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| File Size |
61.92K /
9 Page |
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Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
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| Part No. |
AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F020A-200FCB AM28F020A-70FC AM28F020A-150EC AM28F020A-70EC AM28F020A-90ECB AM28F020A-70FE AM28F020A-70FEB AM28F020A-90FE AM28F020A-90FEB AM28F020A-150FEB AM28F020A-150ECB AM28F020A-70ECB AM28F020A-120ECB AM28F020A-120JCB AM28F020A-120EIB AM28F020A-200EEB AM28F020A-120PCB AM28F020A-120EEB AM28F020A-200EIB AM28F020A-120JEB AM28F020A-120JIB AM28F020A-120PIB AM28F020A-120FEB AM28F020A-120PEB AM28F020A-120FIB AM28F020A-90PEB AM28F020A-90EEB AM28F020A-90EI AM28F020A-90EIB AM28F020A-200PCB AM28F020A-150JIB AM28F020A-70PCB AM28F020A-70EEB AM28F020A-150JC AM28F020A-200PIB AM28F020A-200JIB AM28F020A-200JEB AM28F020A-150PIB AM28F020A-90FCB AM28F020A-200EC AM28F020A-150JE AM28F020A-70JIB AM28F020A-200FIB
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| OCR Text |
...etary non-epi process. latch-up pro- tection is provided for stresses up to 100 ma on address and data pins from C1 v to v cc +1 v. amds fl...electron injection.
2 am28f020a embedded program the am28f020a is byte programmable using the embe... |
| Description |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
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| File Size |
244.09K /
35 Page |
View
it Online |
Download Datasheet |
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ADVANCED MICRO DEVICES INC
SPANSION LLC
Advanced Micro Devices, Inc.
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| Part No. |
AM28F256A AM28F256A-150FCB AM28F256A-70FC AM28F256A-70FCB AM28F256A-120FCB AM28F256A-200FC AM28F256A-120JE AM28F256A-120EIB AM28F256A-120JC AM28F256A-120ECB AM28F256A-120EE AM28F256A-120EEB AM28F256A-120FE AM28F256A-120FEB AM28F256A-120FIB AM28F256A-70PC AM28F256A-70EIB AM28F256A-70FIB AM28F256A-90FCB AM28F256A-70EE AM28F256A-70FEB AM28F256A-200EEB AM28F256A-120JCB AM28F256A-90EE AM28F256A-120PE AM28F256A-90EI AM28F256A-120JEB AM28F256A-90EEB AM28F256A-120PEB AM28F256A-120PI AM28F256A-90EIB AM28F256A-90ECB AM28F256A-120JI AM28F256A-120JIB AM28F256A-120PC AM28F256A-120PCB AM28F256A-90PEB AM28F256A-120PIB AM28F256A-70EC AM28F256A-200FEB AM28F256A-150JIB AM28F256A-150JCB AM28F256A-90JCB AM28F256A-200JIB AM28F256A-70PCB AM28F256A-70JI AM28F256A-200FIB AM28F256A-70JIB AM28F256A-70PI AM28F256A-150EI AM28F256A-150EIB AM28F256A-70JEB AM28F256A-70PEB 28F256
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| OCR Text |
...etary non-epi process. latch-up pro- tection is provided for stresses up to 100 milliamps on address and data pins from C1 v to v cc +1 v. ...electron injection. comparing embedded algorithms with flasherase and flashrite algorithms am28f256a... |
| Description |
32K X 8 FLASH 12V PROM, 70 ns, PDIP32
Octal bus transceivers and registers 24-SOIC 0 to 70 256千比特（32亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 32K X 8 FLASH 12V PROM, 70 ns, PQCC32
8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 256千比特（32亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 32K X 8 FLASH 12V PROM, 200 ns, PDSO32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 32K X 8 FLASH 12V PROM, 70 ns, PDSO32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256千比特（32亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
8-Bit Identity/Magnitude Comparators 20-SO 0 to 70
Octal bus transceivers with open collector outputs 20-SOIC 0 to 70
Serial-in shift registers with output storage registers 24-PDIP 0 to 70
Serial-in shift registers with output storage registers 24-SOIC 0 to 70
Serial-out shift registers 24-SOIC 0 to 70
Synchronous 4-Bit Up/Down Binary Counters 16-PDIP 0 to 70
Serial-out shift registers 24-PDIP 0 to 70
4-by-4 register files with 3-state outputs 16-SOIC 0 to 70
Synchronous 4-Bit Up/Down Binary Counters 16-SOIC 0 to 70
4-by-4 register files with 3-state outputs 16-PDIP 0 to 70
Octal bus transceivers and registers 24-PDIP 0 to 70
Octal bus transceivers with open collector outputs 20-PDIP 0 to 70
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| File Size |
237.86K /
35 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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