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polysilicon Datasheet PDF File

For polysilicon Found Datasheets File :: 1436 Search Time::3.031ms
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				SONY[Sony Corporation]
Part No.	LCX016AM LCX016
OCR Text	... free circuit. This panel has a polysilicon TFT high-speed scanner and built-in function to display images up/down and/or right/left inverse. The built-in 5V interface circuit leads to lower voltage of timing and control signals. The panel ...
Description	3.3cm (1.3-inch) Black-and-White LCD Panel
File Size	417.22K / 22 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	LCX016 LCX016AL
OCR Text	... free circuit. This panel has a polysilicon TFT high-speed scanner and built-in function to display images up/down and/or right/left inverse. The built-in 5V interface circuit leads to lower voltage of timing and control signals. The panel ...
Description	3.3cm (1.3-inch) Black-and-White LCD Panel
File Size	483.74K / 24 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	LCX017DLT
OCR Text	...cture quality. This panel has a polysilicon TFT high-speed scanner and built-in function to display images up/down and/or right/left inverse. The built-in 5V interface circuit leads to lower voltage of timing and control signals. The panel ...
Description	4.6cm(1.8 Type)Black-and-White LCD Panel 4.6cm (1.8 Type) Black-and-White LCD Panel
File Size	309.24K / 26 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	LCX019AM
OCR Text	...C/PAL display. This panel has a polysilicon TFT high-speed scanner and built-in function to display images up/down and/or right/left inverse. The built-in 5V interface circuit leads to lower voltage of timing and control signals. Features *...
Description	3.4cm (1.32-inch) LCD Panel (with microlens)
File Size	302.55K / 22 Page	View it Online	Download Datasheet

				MICREL[Micrel Semiconductor]
Part No.	MPD8021 MIC8021-0002 MIC8021-0001
OCR Text	...................... 1 Low-value polysilicon resistor ........................................... 1 Digital cells and miscellaneous components are not accessible from the pins of this device. This device is suitable for curve tracer ...
Description	Semicustom High-Voltage Array Summary Information
File Size	36.72K / 2 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF140
OCR Text	... The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Ga...
Description	N-CHANNEL MOS LINEAR RF POWER FET
File Size	162.25K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF141G
OCR Text	...ICS The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Ga...
Description	N-CHANNEL BROADBAND RF POWER MOSFET
File Size	141.68K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF148
OCR Text	... The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Ga...
Description	N-CHANNEL MOS LINEAR RF POWER FET
File Size	145.04K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF150
OCR Text	... The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Ga...
Description	N-CHANNEL MOS LINEAR RF POWER FET
File Size	146.86K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF151G
OCR Text	...ICS The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Ga...
Description	N-CHANNEL BROADBAND RF POWER MOSFET
File Size	155.18K / 6 Page	View it Online	Download Datasheet

For polysilicon Found Datasheets File :: 1436 Search Time::3.031ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |