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For min.8mb Found Datasheets File :: 272 Search Time::3.453ms
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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K5A3380YTC-T755 K5A3380YBC-T755 K5A3280YTC-T855 K5A3280YBC-T855 K5A3280YTC-T755 K5A3280YBC-T755 K5A3X80YTC K5A3380YBC-T855 K5A3380YTC-T855
OCR Text	... * SRAM Data Retention : 1.5 V (min.) * Industrial Temperature : -40C ~ 85C * Package : 69-ball TBGA Type - 8 x 11mm, 0.8 mm pitch 1.2mm(max...8Mb, 24Mb) (x8/x16 Selectable) 33 : 32Mbit, (16Mb, 16Mb) (x8/x16 Selectable) SRAM Density , Organiza...
Description	MCP MEMORY
File Size	620.40K / 45 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4H561638F-TCCC K4H561638F-TCC4 K4H560838F-TC K4H560838F-TCC4 K4H560838F-TCCC
OCR Text	... (0.50) (R 0. 15 ) 0.05 MIN [ 0.075 MAX ] (10x) NOTE 1. ( ) IS REFERENCE 2. [ ] IS ASS'Y OUT QUALITY (R (0.71) 0....8Mb x 8 / 4Mb x 16 I/O x 4 Banks) DDR SDRAM 16 (L)WE I/O Control CK, CK Data Input...
Description	256Mb F-die DDR400 SDRAM Specification 256Mb的的F -模具支持DDR400内存规格
File Size	168.74K / 19 Page	View it Online	Download Datasheet

				MICRON[Micron Technology]
Part No.	MT28C3224P20 MT28C3224P18
OCR Text	...CC voltages MT28C3224P20 1.80V (MIN)/2.20V (MAX) F_VCC read voltage 1.80V (MIN)/2.20V (MAX) S_VCC read voltage 1.80V (MIN)/2.20V (MAX) VCCQ ...8Mb deep and contains 8 x 4K-word parameter blocks and fifteen 32K-word blocks. Bank b is 24Mb deep,...
Description	FLASH AND SRAM COMBO MEMORY
File Size	472.98K / 42 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	HYB25L128160AC HYE25L128160AC-8 HYB25L128160AC-75 HYB25L128160AC-8 HYE25L128160AC-75
OCR Text	... +85oC) -7.5 fCK,MAX tCK3,MIN tAC3,MAX tCK2,MIN tAC2,MAX 133 7.5 5.4 9.5 6 * 8Mbit x 16 organisation * VDD = 2.5V, VDDQ = 1.8V /...8Mb x16 SDRAM (12 / 9 / 2 addressing) INFINEON Technologies 4 CLK CKE CS RAS CAS WE DQMU DQ...
Description	128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES
File Size	822.18K / 50 Page	View it Online	Download Datasheet

				SAMSUNG
Part No.	K5A3280YBA
OCR Text	... * SRAM Data Retention : 1.5 V (min.) * Industrial Temperature : -40C ~ 85C * Package : 69-ball TBGA Type - 8 x 11mm, 0.8 mm pitch 1.2mm(max...8Mb, 24Mb) (x8/x16 Selectable) 33 : 32Mbit, (16Mb, 16Mb) (x8/x16 Selectable) SRAM Density , Organiza...
Description	32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM
File Size	557.59K / 47 Page	View it Online	Download Datasheet

				ESS
Part No.	ES4408FD
OCR Text	...from metric to imperial. Symbol Min - 0.010 (0.25) 0.130 (3.30) 0.007 (0.18) 0.005 (0.12) 1.195 (30.35) 1.098 (27.90) Nom - - 0.134 (3.40) 0.009 (0.23) 0.006 (0.16) 1.205 (30.60) 1.102 (28.00) 1.004 (25.50) REF 0.0197 (0.50) BASIC M...
Description	DVD Processor Product Brief
File Size	89.83K / 6 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H511638D-UCC K4H511638D-UC3 K4H510838D-LA2 K4H510838D-LB0 K4H510838D-LB3 K4H510838D-LCC K4H510838D-UC_LA2 K4H510838D-UC_LB0 K4H510838D-UC_LB3 K4H510838D-UC_LCC K4H510838D-UC0 K4H510838D-UC2 K4H510838D-UC3 K4H510838D-UCC K4H511638D K4H511638D-LB0 K4H511638D-LB3 K4H511638D-LCC K4H511638D-UC_LA2 K4H511638D-UC_LB0 K4H511638D-UC_LB3 K4H511638D-UC_LCC K4H511638D-UC0 K4H511638D-UC2 K4H511638D-LA2
OCR Text	...0 ( 4x 5) 15 ) 0.05 MIN 0. (0.71) 0.65TYP 0.650.08 0.300.08 (10x) 0.10 MAX [ 0.075 MAX ] NOTE 1. ( ) IS REFERE...8Mb x 16 I/O x4 Banks) Preliminary DDR SDRAM x8/16 LWE I/O Control CK, CK Data Inp...
Description	512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
File Size	354.52K / 24 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4H561638A-TCA0 K4H561638A-TCA2 K4H561638A-TCB0 K4H561638A-TLA2 K4H280838D-TCA0 K4H280838D-TCA2 K4H280838D-TLA2 K4H560838D-TCA2 K4H560838D-TCB0 K4H560838D-TLA2 K4H560838D-TLB0 K4H560838D-TCA0 K4H560838D-TLA0 K4H561638C-TCA0 K4H561638C-TCA2 K4H561638C-TLA2 K4H560438 K4H560838A-TCA0 K4H560838A-TCA2 K4H560838A-TCB0 K4H560838A-TLA0 K4H560838A-TLA2 K4H560838A-TLB0 K4H560838B K4H560838B-TCA0 K4H560838B-TCA2 K4H560838B-TCB0 K4H560838B-TLA0 K4H560838B-TLA2 K4H560838B-TLB0 K4H560838C-TCA0 K4H560838C-TCA2 K4H560838C-TCB0 K4H560838C-TLA0 K4H560838C-TLA2 K4H560838C-TLB0 K4H1G0438A-TCA0 K4H1G0438A-TCA2 K4H1G0438A-TCB0 K4H1G0438A-TLA0 K4H1G0438A-TLA2 K4H1G0438A-TLB0 K4H1G0438B-TCA0 K4H1G0438B-TCA2 K4H1G0438B-TCB0 K4H1G0438B-TLA0 K4H1G0438B-TLA2 K4H1G0438B-TLB0 K4H1G0438C-TCA0 K4H1G0438C-TCA2 K4H1G0438C-TCB0 K4H1G0438C-TLA0 K4H1G0438C-TLA2 K4H1G0438C-TLB0 K4H1G0438D-TCA0 K4H1G0438D-TCA2 K4H1G0438D-TCB0 K4H1G0438D-TLA0 K4H1G0438D-TLA2 K4H1G0438D-TLB0 K4H1G0438E-TCA0 K4H281638E-TCB0 K4H561638A-TLA0 K4H561638A-TLB0 K4H561638C-TCB0 K4H561638C-TLA0 K4H561638C-TLB0 K4H561638D-TCA0 K4H561638D-TCA2 K4H643238M-TLB0 KM48L16031BT-G_LZ DDRSDRAM1111 K4H1G0438E-TCA2 K4H1G0438E-TCB0 K4H1G0438E-TLA0 K4H1G0438E-T
OCR Text	... duration is 3ns at VDD. . Vil(min) =- 1.5V, the overshoot voltage duration is 3ns at VSS. - Changed AC parameters as follows. from tDQSQ ...8Mb x 16 16Mb x 8 32Mb x 4 VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC ...
Description	128Mb F-die DDR SDRAM Specification 256Mb DDR SDRAM DDR SDRAM Specification Version 1.0 128MB DDR SDRAM
File Size	666.72K / 53 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240YT K5A3340YTC-T855 K5A3240YBC-T755 K5A3240YTC-T755 K5A3340YBC-T755 K5A3340YBC-T855 K5A3340YT K5A3340YTC-T755
OCR Text	... * SRAM Data Retention : 1.5 V (min.) * Industrial Temperature : -40C ~ 85C * Package : 69-ball TBGA Type - 8 x 11mm, 0.8 mm pitch 1.2mm(max...8Mb, 24Mb) (x8/x16 Selectable) 33 : 32Mbit, (16Mb, 16Mb) (x8/x16 Selectable) SRAM Density , Organiza...
Description	Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
File Size	863.20K / 45 Page	View it Online	Download Datasheet

				http:// NANOAMP[NanoAmp Solutions, Inc.]
Part No.	N08T1630C1BT N08T1630CXB N08T1630C1BT2 N08T1630C1BT2-55 N08T1630C1BT2-70 N08T1630C1BT-55 N08T1630C1BT-70 N08T1630C1BZ2-55 N08T1630C1BZ2-70 N08T1630C1BZ-55 N08T1630C1BZ-70 N08T1630C2BT2-55 N08T1630C2BT2-70 N08T1630C2BT-55 N08T1630C2BT-70 N08T1630C2BZ N08T1630C2BZ2 N08T1630C2BZ2-55 N08T1630C2BZ2-70 N08T1630C2BZ-55 N08T1630C2BZ-70
OCR Text	... VIN = 0V, f = 1 MHz, TA = 25oC Min Max 8 8 Unit pF pF 1. These parameters are verified in device characterization and are not 100% tested (DOC# 14-02-004 REV H ECN# 01-1102) The specifications of this device are subject to change wit...
Description	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit
File Size	177.20K / 9 Page	View it Online	Download Datasheet

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