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  id-4.2a Datasheet PDF File

For id-4.2a Found Datasheets File :: 6122    Search Time::2.859ms    
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    2SK740

HITACHI[Hitachi Semiconductor]
Part No. 2SK740
OCR Text ...ue at TC = 25C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 150 20 10 40 10 50 150 -55 to +150 Unit V V A A A W C C...4.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.12 7.0 1200 550 85 20 50 70 40 1.2 220 Max -- --...
Description Silicon N-Channel MOS FET

File Size 46.51K  /  8 Page

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    2SK975

HITACHI[Hitachi Semiconductor]
Part No. 2SK975
OCR Text ...duty cycle 1% Symbol VDSS VGSS ID I D(pulse)* I DR Pch Tch Tstg 1 Ratings 60 20 1.5 4.5 1.5 900 150 -55 to +150 Unit V V A A A mW C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source br...
Description Silicon N-Channel MOS FET

File Size 40.51K  /  8 Page

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    CMT2N7002E

Champion Microelectronic Corporation
ETC[ETC]
List of Unclassifed Manufacturers
Part No. CMT2N7002E
OCR Text ...= 25J TA = 70J Symbol VDSS VDGR ID IDM VGS PD TJ, TSTG JA Value 60 60 240 190 1300 20 0.35 0.22 -55 to 150 357 Unit V V mA mA V W J J /W ...4.5V) Static Drain-Source On-Resistance (Note 2) (VGS = 10 V, ID = 0.25A) (VGS = 4.5 V, ID = 0.2A) D...
Description CMT2N7002E

File Size 160.29K  /  6 Page

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    FDS2582

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FDS2582
OCR Text ...DS(ON) = 57m (Typ.), VGS = 10V, ID = 4.1A * Qg(tot) = 19nC (Typ.), VGS = 10V * Low Miller Charge * Low QRR Body Diode * Optimized efficiency at high frequencies * UIS Capability (Single Pulse and Repetitive Pulse) Applications * DC/DC c...
Description Discrete Commercial N-Channel UltraFET TRENCH MOSFET, 150V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 Package
12 AMP MINIATURE POWER RELAY
N-Channel PowerTrench MOSFET 150V/ 4.1A/ 66m
N-Channel PowerTrench MOSFET 150V, 4.1A, 66mз
N-Channel PowerTrench MOSFET 150V, 4.1A, 66m?/a>

File Size 215.08K  /  11 Page

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    HUF76132SK8 HUF76132SK8T

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HUF76132SK8 HUF76132SK8T
OCR Text .... . . . . . . . . . . . . . . . ID Continuous (TA= 100oC, VGS = 5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA= 100oC, VGS = 4.5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . ...
Description 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 11.5 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA

File Size 259.00K  /  12 Page

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    ITF86172SK8T

INTERSIL[Intersil Corporation]
Part No. ITF86172SK8T
OCR Text .... . . . . . . . . . . . . . . . ID 10.0 A Continuous (TA= 25oC, VGS = 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 8.0 A ChanContinuous (TA= 100oC, VGS = 4.5V) (Note 2) . . . . . . . . . . . . . . . . ...
Description 10A/ 30V/ 0.016 Ohm/ P-Channel/ Logic Level/ Power MOSFET
10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET
10A 30V 0.016 Ohm P-Channel Logic Level Power MOSFET

File Size 173.61K  /  12 Page

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    ITF86182SK8T

INTERSIL[Intersil Corporation]
Part No. ITF86182SK8T
OCR Text .... . . . . . . . . . . . . . . . ID -11.0 A ChanContinuous (TA= 25oC, VGS = 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID -9.0 A nel, Continuous (TA= 100oC, VGS = 4.5V) (Note 2) . . . . . . . ....
Description 11A/ 30V/ 0.0115 Ohm/ P-Channel/ Logic Level/ Power MOSFET
11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET

File Size 172.94K  /  12 Page

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    SI9435 SI9435DY SI9435DYL86Z SI9435DYL99Z

Fairchild Semiconductor, Corp.
Part No. SI9435 SI9435DY SI9435DYL86Z SI9435DYL99Z
OCR Text ...imum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwi...4.5 V, ID = -4.2A, VGS = -10 V, VDS = -15 V, VDS = -5 V ID = -5.3 A -1 -1.7 4 38 54 55 -3 ...
Description GP RELAY P沟道MOSFET的逻辑电平的PowerTrench
5300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET SO-8
P-Channel Logic Level PowerTrench MOSFET

File Size 95.95K  /  5 Page

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    TPC8102

TOSHIBA[Toshiba Semiconductor]
Part No. TPC8102
OCR Text ...th = -0.8~ -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage ...4 1.0 47 -6 0.24 150 -55 to 150 Unit V V V A W W mJ A mJ C C JEDEC JEITA TOSHIBA 2-6J1B D...
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (MOSVI)

File Size 469.72K  /  7 Page

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    TPC8106-H

TOSHIBA[Toshiba Semiconductor]
Part No. TPC8106-H
OCR Text ...th = -0.8~ -2.0 V (VDS =- 10 V, ID = -1 mA) Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20...4 1.0 130 -10 0.24 150 -55 to 150 Unit V V V A W W mJ A mJ C C JEDEC JEITA TOSHIBA 2-6J1B ...
Description SILICON P CHANNEL MOS TYPE

File Size 510.73K  /  7 Page

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For id-4.2a Found Datasheets File :: 6122    Search Time::2.859ms    
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