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Advanced Micro Devices, Inc.
PROM
ADVANCED MICRO DEVICES INC
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| Part No. |
AM28F512A-120JEB AM28F512A-120PEB AM28F512A-120FEB AM28F512A-90FEB AM28F512A-90EEB AM28F512A-90PEB AM28F512A-120FCB AM28F512A-90JEB AM28F512A-120FI AM28F512A-150FI AM28F512A-200ECB AM28F512A-90ECB AM28F512A-70ECB AM28F512A-150ECB AM28F512A-150FIB AM28F512A-200FI AM28F512A-200FIB AM28F512A-90FI AM28F512A-70FI AM28F512A-90FIB AM28F512A-120EIB AM28F512A-200FC AM28F512A-150FCB AM28F512A-150JEB AM28F512A-200PI AM28F512A-150PI AM28F512A-70PC AM28F512A-200PCB AM28F512A-200EIB AM28F512A-70PCB AM28F512A-90JCB AM28F512A-90JIB AM28F512A-90PIB AM28F512A-150EE AM28F512A-200EEB AM28F512A-120JI AM28F512A-200JCB AM28F512A-200JIB AM28F512A-70JI AM28F512A-200PE AM28F512A-70JEB AM28F512A-120JIB
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| OCR Text |
... block diagram product selector guide family part number am28f512a speed options (v cc = 5.0 v 10%) -70 -90 -120 -150 -200 max access ti...latched on the falling edge of the write enable pulse and the appropriate data is latched on the ris... |
| Description |
Divide-By-Twelve Decade Counter 14-PDIP 0 to 70
Divide-By-Twelve Decade Counter 14-SOIC 0 to 70
Quadruple 2-Input Positive-NAND Gates 14-SOIC -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SO -40 to 85
Quadruple 2-Input Positive-Nor Gates 14-TVSOP -40 to 85
4-Bit Binary Counters 14-SO 0 to 70
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Quadruple 2-Input Positive-Nor Gates 14-TSSOP -40 to 85 2正输入或非门 14-TSSOP封装40℃到85
Hex Inverters 14-SSOP -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Hex Inverters 14-TVSOP -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Hex Inverters 14-SO -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
4-Bit Binary Counters 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32
Quadruple 2-Input Positive-NAND Gates 14-TVSOP -40 to 85 64K X 8 FLASH 12V PROM, 200 ns, PDSO32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 64K X 8 FLASH 12V PROM, 120 ns, PQCC32
Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Hex Inverters 14-SOIC -40 to 85 64K X 8 FLASH 12V PROM, 90 ns, PDIP32
Quadruple 2-Input Positive-Nor Gates 14-SO -40 to 85 64K X 8 FLASH 12V PROM, 70 ns, PQCC32
Quadruple 2-Input Positive-Nor Gates 14-SOIC -40 to 85
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| File Size |
237.11K /
34 Page |
 View
it Online |
Download Datasheet
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SEMIKRON
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| Part No. |
K9WBG08U1M-ICB00 K9WBG08U1M-PCB00
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| OCR Text |
...py-back with data output timing guide 3. modify 2-plane copy-back program operation 4. modify 2kb program operation timing guide 1. interlea...latched into the command register through the i/o ports on the rising edge of the we signal. ale ad... |
| Description |
FLASH 3V PROM, BGA52 17 X 12 MM, 1 MM PITCH, LEAD FREE, TLGA-52
FLASH 3V PROM, PDSO48 20 X 12 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48
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| File Size |
1,546.76K /
67 Page |
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it Online |
Download Datasheet |
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Ramtron
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| Part No. |
FM1808-70-P
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| OCR Text |
...applications. This applications guide is intended to facilitate the transition from BBSRAM to FRAM. It is divided into two parts. First is a treatment of the advantages of FRAM memory compared with battery-backed SRAM. Second is a design gu... |
| Description |
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| File Size |
89.50K /
12 Page |
View
it Online |
Download Datasheet |
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Ramtron International Corp.
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| Part No. |
FM18L08
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| OCR Text |
...RAM products. This applications guide is intended to facilitate the transition from BBSRAM to FRAM. It is divided into two parts. First is a treatment of the advantages of FRAM memory compared with battery-backed SRAM. Second is a design gu... |
| Description |
256Kb Bytewide FRAM Memory(256Kb宽字节FRAM存储
From old datasheet system
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| File Size |
80.39K /
12 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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