| |
|
 |
CEL[California Eastern Labs]
|
| Part No. |
NESG2101M05-T1-A NESG2101M05
|
| OCR Text |
...KAGE OUTLINE SYMBOLS P1dB GL NF Ga NF Ga MSG |S21E| fT Cre ICBO DC IEBO hFE Notes:
2
NESG2101M05 M05 UNITS dBm dB dB dB dB dB dB dB GHz ...A QUANTITY 3 kpcs/reel SUPPLYING FORM * Pin 3 (Collector), Pin 4 (Emitter) face the perforation side... |
| Description |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
| File Size |
390.70K /
15 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
CEL[California Eastern Labs]
|
| Part No. |
NESG2101M16-T3-A NESG2101M16
|
| OCR Text |
...KAGE OUTLINE SYMBOLS P1dB GL NF Ga NF Ga MSG |S21E| fT Cre ICBO DC IEBO hFE Notes:
2
NESG2101M16 M16 UNITS dBm dB dB dB dB dB dB dB GHz ...A 10 K pcs reel
Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape
PIN C... |
| Description |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
| File Size |
179.17K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
CEL[California Eastern Labs]
|
| Part No. |
NESG2046M33-T3-A NESG2046M33 NESG2046M33-A
|
| OCR Text |
...PPLICATIONS:
NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTOR...A NESG2046M33-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM * 8 mm wide embossed tapin... |
| Description |
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
|
| File Size |
220.89K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Duracell
|
| Part No. |
UPC1663GV-E1-A
|
| OCR Text |
....6 notes: 1. gain select pins ga and gb are connected together. 2. all gain select pins are open. 3. insert adjustment resistor (0 to...a video amplifer with differential input and output stages. a high frequency process (f t =... |
| Description |
|
| File Size |
315.60K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
Duracell
CEL[California Eastern Labs]
|
| Part No. |
NE677M04-T2-A NE677M04
|
| OCR Text |
...RRENT
8 VCE = 3 V f = 2 GHz 16 Ga 12
Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB)
25 VCE = 3 V f = 2.5 GH...a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to design... |
| Description |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
|
| File Size |
127.21K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
California Eastern Laboratories
|
| Part No. |
NE3509M04-T2-A
|
| OCR Text |
...in : nf = 0.4db typ. ga = 17.5db typ. @f = 2gh z , vds = 2v,id = 10ma - flat-lead 4-pin tin-t y pe super mi ni-...a v e communication s y stem ordering information p a rt numb er ord e r numb er qu ... |
| Description |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
| File Size |
322.02K /
11 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
