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Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
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| Part No. |
KDR331E
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| OCR Text |
esm.
2
KDR331E
SCHOTTKY BARRIER TYPE DIODE
E B
D 3
DIM A B
C D E G H
MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10
0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05
A
G
1
MAXIMUM RATING (T... |
| Description |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
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| File Size |
62.65K /
2 Page |
 View
it Online |
Download Datasheet
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KEC[KEC(Korea Electronics)]
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| Part No. |
KDS121E
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| OCR Text |
...CON EPITAXIAL PLANAR DIODE
: esm. : VF=0.9V (Typ.). : trr=1.6ns(Typ.).
A G H
2 1
E B
D 3
DIM A B
C D E G H J
: CT=0.9pF (Typ.).
MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10
0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00... |
| Description |
SILICON EPITAXIAL PLANAR DIODE
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| File Size |
150.51K /
1 Page |
View
it Online |
Download Datasheet |
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KEC[KEC(Korea Electronics)]
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| Part No. |
KDS142E
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| OCR Text |
esm. Low Forward Voltage : VF=1.0V (Max.).
2 E
KDS142E
SILICON EPITAXIAL PLANAR DIODE
B D 3
DIM A B
C D E G H J
MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10
0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + ... |
| Description |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
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| File Size |
382.80K /
2 Page |
View
it Online |
Download Datasheet |
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KEC Holdings
KEC[KEC(Korea Electronics)]
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| Part No. |
KTD1824E
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| OCR Text |
...age VEBO. Low noise voltage NV. esm type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
KTD1824E
EPITAXIAL PLANAR NPN TRANSISTOR
E B
2
D 3
DIM A B
C ... |
| Description |
EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION) 外延平面NPN晶体管（低频功放
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| File Size |
69.72K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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