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Motorola Mobility Holdings, Inc.
Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
ON Semiconductor
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| Part No. |
P6KE200A P6KE47A P6KE51A P6KE30A P6KE56A P6KE33A P6KE75A P6KE8.2A P6KE22A P6KE120A P6KE12A P6KE110A P6KE11A P6KE100A P6KE10A P6KE150A P6KE15A P6KE130A P6KE13A P6KE43A P6KE62A P6KE91A P6KE68A P6KE6.8A P6KE180A P6KE160A P6KE170A P6KE39A P6KE36A P6KE16A ON2770 P6KE7.5A P6KE18A P6KE20A P6KE24A P6KE27A P6KE82A P6KE9.1A P6KE68-200-D
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| OCR Text |
...hown in Figure A. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage acro... |
| Description |
ZENER OVERVOLTAGE TRANSIENTSUPPRESSORS 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Octal Buffers and Line Drivers with 3-State Outputs 20-SOIC -40 to 85
Octal D-Type Registers with 3-State Outputs 20-SOIC -40 to 85
3-V to 5.5-V Multichannel RS-232 1-MBit/s Line Driver/Receiver 28-SOIC -40 to 85
Single Output LDO, 200mA, Fixed(1.8V), Low Quiescent Current, Low Noise, High PSRR 5-SOT -40 to 85
Octal Line Driver/MOS Driver with 3-State Outputs 20-SSOP/QSOP -40 to 85
Single Output LDO, 1.0A, Fixed(2.8V), Low Noise, High PSRR 6-SOT-223 -40 to 125
1.5 GHz to 2.5 GHz Quadrature Modulator 16-VQFN -40 to 85
Low-Noise Fast-Transient-Response 1.5-A LDO Regulator 5-DDPAK/TO-263 -40 to 125
2.5-V 460-Kbps RS-232 Transceiver With /-15-kV ESD Protection 20-TSSOP 0 to 70
From old datasheet system
Zener Transient Voltage Suppressors Undirectional and Bidirectional
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| File Size |
81.70K /
7 Page |
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it Online |
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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 FSPYC260F3 FSPYC260R FSPYC260R3
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| OCR Text |
...rformance for SEE (Single Event effects) which the Intersil FS families have always featured. The Intersil portfolio of Star*Power FETS includes a family of devices in various voltage, current and package styles. The Star*Power family consi... |
| Description |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
82.56K /
8 Page |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSPL230D1 FSPL230F FSPL230F3 FSPL230F4 FSPL230R4 FSPL230R FSPL230R3
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| OCR Text |
...ed performance for Single Event effects (SEE) which the Intersil FS families have always featured.
TM
Features
* 9A, 200V, rDS(ON) = 0.170 * UIS Rated * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) - Rated to 300K RAD (Si... |
| Description |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
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| File Size |
80.46K /
8 Page |
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it Online |
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Intersil, Corp.
Intersil Corporation
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| Part No. |
JANSR2N7399
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| OCR Text |
...MOSFET immunity to Single Event effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neut... |
| Description |
11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET 11 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET
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| File Size |
43.53K /
8 Page |
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it Online |
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Price and Availability
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