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  diode-40v Datasheet PDF File

For diode-40v Found Datasheets File :: 7566    Search Time::3.297ms    
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    IRF[International Rectifier]
Part No. IRLU3114ZPBF IRLR3114ZPBF
OCR Text ...Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- --- 30 27 130 A 500 1.3...
Description AUTOMOTIVE MOSFET

File Size 743.95K  /  11 Page

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    DMN4020LFDE-7 DMN4020LFDE-15 DMN4020LFDE DMN4020LFDE-13

Diodes Incorporated
Part No. DMN4020LFDE-7 DMN4020LFDE-15 DMN4020LFDE DMN4020LFDE-13
OCR Text ... 1%) i dm 32 a maximum body diode continuous current i s 2.5 a thermal characteristics (@t a = +25c, unless otherwise specified...40v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 20v, v ds = 0v on characteris...
Description 40V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 280.96K  /  6 Page

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    FDS8449

Fairchild Semiconductor
Part No. FDS8449
OCR Text ... 7.7 2.4 2.8 Drain-Source Diode Characteristics VSD trr Qrr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reve...40V N-Channel PowerTrench(R)MOSFET Typical Characteristics 20 3 VGS = 10V 4.0V VGS = 3.0V R...
Description 40V N-Channel PowerTrench MOSFET

File Size 109.87K  /  6 Page

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    Diodes
Part No. DMN4025LSD
OCR Text ...continuous source current (body diode) (notes 3 & 5) i s 3.0 pulsed source current (body diode) (notes 4 & 5) i sm 29.0 th...40v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteri...
Description 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 247.72K  /  8 Page

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    STB190NF0406 STB190NF04-1 STB190NF04T4 STP190NF04 B190NF04 P190NF04 STB190NF04 STB190NF04_06

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. STB190NF0406 STB190NF04-1 STB190NF04T4 STP190NF04 B190NF04 P190NF04 STB190NF04 STB190NF04_06
OCR Text ...t TC = 25C Derating factor Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature Max. operating junction temperature -55 to 175 C Value 40 40 20 120 120 480 310 2.07 7 860 Unit V V V A A A W W/C V/ns mJ 1. ...
Description N-channel 40V - 0.0039ohm - 120A - D2PAK/I2PAK/TO-220 STripFET TM III Power MOSFET N沟道40V 0.0039ohm - 120A D2PAK/I2PAK/TO-220 STripFET商标第三功率MOSFET

File Size 481.42K  /  16 Page

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    CEF04N6

Chino-Excel Technology
Part No. CEF04N6
OCR Text ...Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre...40V, ID = 2A VDD =300V, ID = 4A, VGS = 10V RGEN=25 600 25 V A 100 nA ON CHARACTERISTICS a ...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 41.22K  /  5 Page

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    1N5819CSM409

Seme LAB
Part No. 1N5819CSM409
OCR Text diode semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. informa...40v, i f = 1.0a ? space level and high-reliability screening options av ailable absolute...
Description SCHOTTKY RECTIFIER DIODE

File Size 112.13K  /  3 Page

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    DMN4026SSD-13 DMN4026SSDQ-13 DMN4026SSD-15

Diodes Incorporated
Part No. DMN4026SSD-13 DMN4026SSDQ-13 DMN4026SSD-15
OCR Text ...7.2 a maximum continuous body diode forward current (note 7) i s 2.5 a pulsed drain current (10s pulse, duty cycle = 1%) i dm 70 a ...40v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characte...
Description 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 303.37K  /  6 Page

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