Part Number Hot Search : 
2F8723P 092315 XC9220 TEA5757H 3107M 2902D FMMT4 BSS79
Product Description
Full Text Search
  die rectifiers Datasheet PDF File

For die rectifiers Found Datasheets File :: 1198    Search Time::0.985ms    
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MUR1100E MUR190E ON2734

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MUR1100E MUR190E ON2734
OCR Text ...ained for the MUR8100E (similar die construction as the MUR1100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 volts, and using Equation (2) the energy absorbed by the MUR8100E is approx...
Description 1 A, 900 V, SILICON, SIGNAL DIODE
ULTRAFAST rectifiers 1.0 AMPERE 900-1000 VOLTS
From old datasheet system

File Size 121.70K  /  6 Page

View it Online

Download Datasheet





    IRHI7460SESCS

International Rectifier
Part No. IRHI7460SESCS
OCR Text ... in.) from package to center of die. measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. modified mosfetsymbol showing the internal inductances. na a downloaded from: http:/// table 2. high dose rate ? 10 ...
Description 500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-259AA package

File Size 31.54K  /  4 Page

View it Online

Download Datasheet

    MBRB3030CTL-D

ON Semiconductor
Part No. MBRB3030CTL-D
OCR Text ... junction temperature ? maximum die size ? short heat sink tab manufactured not sheared! maximum ratings rating symbol value unit peak repe...rectifiers prepared by: david shumate & larry walker on semiconductor products sector abstract power...
Description SWITCHMODE Power Rectifier

File Size 110.47K  /  12 Page

View it Online

Download Datasheet

    IRHI7360SE

International Rectifier
Part No. IRHI7360SE
OCR Text ... in.) from package to center of die. measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. modified mosfet symbol showing the internal inductances. na a table 2. high dose rate ? 10 11 rads (si)/sec 10 12 r...
Description Simple Drive Requirements
400V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-259AA package

File Size 34.18K  /  4 Page

View it Online

Download Datasheet

    IRHI7460SE IRHI7460SE-15

International Rectifier
Part No. IRHI7460SE IRHI7460SE-15
OCR Text ... in.) from package to center of die. measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. modified mosfet symbol showing the internal inductances. na a table 2. high dose rate ? 10 11 rads (si)/sec 10 12 r...
Description Simple Drive Requirements
500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-259AA package

File Size 34.37K  /  4 Page

View it Online

Download Datasheet

    IRHF7310SE

International Rectifier
Part No. IRHF7310SE
OCR Text ... in.) from package to center of die. measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. modified mosfet symbol showing the internal inductances. na a table 2. high dose rate ? 10 11 rads (si)/sec 10 12 r...
Description N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 沟道 单事件效Rad Hard HEXFET技术晶体管)

File Size 36.02K  /  4 Page

View it Online

Download Datasheet

    MUR180E MUR180ERL MUR1100ERL MUR1100E

ONSEMI[ON Semiconductor]
Part No. MUR180E MUR180ERL MUR1100ERL MUR1100E
OCR Text ...ained for the MUR8100E (similar die construction as the MUR1100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 volts, and using Equation (2) the energy absorbed by the MUR8100E is approx...
Description TIP REPL BEVEL .016 SP200-500 1 A, 1000 V, SILICON, SIGNAL DIODE
SWITCHMODE Power rectifiers
1A 800V Ultrafast Rectifier

File Size 83.00K  /  8 Page

View it Online

Download Datasheet

    JANSH2N7380 JANSR2N7380

International Rectifier
Part No. JANSH2N7380 JANSR2N7380
OCR Text ...5 in) from package to center of die. measured from source lead, 6mm (0.25 in) from package to source bonding pad. modified mosfet symbol show- ing the internal inductances. m a source-drain diode ratings and characteristics parameter min t...
Description HEXFET Transistor(HEXFET 晶体

File Size 98.02K  /  8 Page

View it Online

Download Datasheet

    FFB20UP20DN

Fairchild Semiconductor
Part No. FFB20UP20DN
OCR Text ..._jc value is specified for each die 2: Pulse: Test Pulse width = 300S, Duty Cycle = 2% 2 FFB20UP20DN Rev. A 2 www.fairchildsemi.com FFB20UP20DN 10A, 200V Ultrafast Dual rectifiers Typical Characteristics TC = 25C unless ot...
Description 10A, 200V Ultrafast Dual rectifiers

File Size 313.55K  /  5 Page

View it Online

Download Datasheet

For die rectifiers Found Datasheets File :: 1198    Search Time::0.985ms    
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of die rectifiers

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.8016970157623