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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
PM50RLB120
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| OCR Text |
...opting new 5th generation IGBT (cstbt) chip, which performance is improved by 1m fine rule process. For example, typical Vce(sat)=1.9V @Tj=125C b) I adopt the over-temperature conservation by Tj detection of cstbt chip, and error output is ... |
| Description |
FLAT-BASE TYPE INTELLIGENT POWER MODULES
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| File Size |
94.30K /
6 Page |
 View
it Online |
Download Datasheet
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
PM75B4LB060
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| OCR Text |
...opting new 5th generation IGBT (cstbt TM ) chip, which performance is improved by 1m fine rule process. For example, typical Vce(sat)=1.55V @Tj=125C b) Over-temperature protection by detecting Tj of the cstbt TM chips and error output is po... |
| Description |
INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
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| File Size |
109.60K /
8 Page |
View
it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
PM75CLB060
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| OCR Text |
...opting new 5th generation IGBT (cstbt) chip, which performance is improved by 1m fine rule process. For example, typical Vce(sat)=1.5V @Tj=125C b) I adopt the over-temperature conservation by Tj detection of cstbt chip, and error output is ... |
| Description |
FLAT-BASE TYPE INSULATED PACKAGE
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| File Size |
92.54K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
PM75RLB060
|
| OCR Text |
...opting new 5th generation IGBT (cstbt) chip, which performance is improved by 1m fine rule process. For example, typical Vce(sat)=1.5V @Tj=125C b) I adopt the over-temperature conservation by Tj detection of cstbt chip, and error output is ... |
| Description |
MITSUBISHI INTELLIGENT POWER MODULES
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| File Size |
95.79K /
6 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
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