|
|
 |
Cree
|
Part No. |
C2M0080120D
|
OCR Text |
...c4d10120 i ds = 20 a figure 22. clamped inductive switching energy vs. junction temperature (fig. 24) figure 21. clamped inductive switching energy vs. drain current (fig. 24) figure 19. typical gate characteristic 25 oc figure 20. resist... |
Description |
Silicon Carbide Power MOSFET
|
File Size |
618.28K /
9 Page |
View
it Online |
Download Datasheet
|
|
|
 |
FAIRCHILD SEMICONDUCTOR CORP
|
Part No. |
V3040S3SL86Z
|
OCR Text |
...-inductive - 2.8 15 s scis self clamped inductive switching t j = 25c, l = 3.0 mhy, r g = 1k ?, v ge = 5v, see fig. 1 & 2 - - 300 mj r jc thermal resistance junction-case to-252, to-263, to-220 - - 1.0 c/w
?2002 fairchild semicondu... |
Description |
21 A, 390 V, N-CHANNEL IGBT, TO-263AB
|
File Size |
120.21K /
8 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|