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    MTD5P06V ON2511 MTD5P06V-T4

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTD5P06V ON2511 MTD5P06V-T4
OCR Text ...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description 5 A, 60 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET
TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
From old datasheet system

File Size 244.68K  /  10 Page

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    MTE125N20E MTE125N20E_D ON2529

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTE125N20E MTE125N20E_D ON2529
OCR Text ...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description From old datasheet system
TMOS POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM

File Size 227.99K  /  8 Page

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    MTY55N20E MTY55N20E_D ON2720

Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semi
Part No. MTY55N20E MTY55N20E_D ON2720
OCR Text ...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM 55 A, 200 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system

File Size 231.14K  /  8 Page

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    MTP75N06HD

ON SEMICONDUCTOR
Part No. MTP75N06HD
OCR Text ...ce data is difficult to use for calculating rise and fall because drain?gate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av) ...
Description 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 127.21K  /  8 Page

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    MTB33N10ET4

ON SEMICONDUCTOR
Part No. MTB33N10ET4
OCR Text ...ce data is difficult to use for calculating rise and fall because drain ? gate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av...
Description 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 260.46K  /  10 Page

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    MTW23N25E

Motorola, Inc.
Part No. MTW23N25E
OCR Text ...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM

File Size 153.08K  /  8 Page

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    MTP2N40E_D ON2578 MTP2N40E

Motorola, Inc
ON Semi
Part No. MTP2N40E_D ON2578 MTP2N40E
OCR Text ...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM
From old datasheet system

File Size 216.89K  /  8 Page

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