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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT40G121
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Description |
Insulated Gate bipolar transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated Gate bipolar transistor Silicon N Channel IGBT
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File Size |
139.45K /
5 Page |
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it Online |
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Unisonic Technologies Co., Ltd.
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Part No. |
OMD60L60FL OMD150N06FL
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Description |
transistor | IGBT POWER MODULE | FULL BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|全桥| 600V的五(巴西)国际消费电子展| 75A条一c transistor | MOSFET POWER MODULE | FULL BRIDGE | 60V V(BR)DSS | 150A I(D)
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File Size |
242.48K /
4 Page |
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it Online |
Download Datasheet
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ONSEMI[ON Semiconductor]
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Part No. |
MGW12N120
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Description |
Insulated Gate bipolar transistor N-Channel Insulated Gate bipolar transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
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File Size |
133.06K /
5 Page |
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it Online |
Download Datasheet
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INFINEON[Infineon Technologies AG]
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Part No. |
BFS17W BFS17W.
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Description |
RF-bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA RF-bipolar NPN Type transistors with transition frequency from 1 to 6 GHz NPN Silicon RF transistor
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File Size |
44.03K /
5 Page |
View
it Online |
Download Datasheet
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Price and Availability
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