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Bourns, Inc.
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Part No. |
TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48-12 TWA8-48-15 TWA8-12S3.3
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Description |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC Analog IC 模拟IC
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File Size |
293.45K /
2 Page |
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it Online |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
CT90AM-18
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Description |
Integrated Gate bipolar transistor (IGBT) Modules: 250V INSULATED GATE bipolar transistor
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File Size |
22.58K /
2 Page |
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it Online |
Download Datasheet
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Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
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Part No. |
CJD127 CJD127PNP CJD122 CJD122NPN CJD122-NPN
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Description |
SMD bipolar Power transistor NPN Darlington COMPLEMENTARY SILICON POWER DARLINGTON transistor 互补性的芯片功率达林顿晶体管 From old datasheet system SMD bipolar Power transistor PNP Darlington
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File Size |
125.86K /
2 Page |
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it Online |
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MDE Semiconductor
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Part No. |
5KP170 5KP170A
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Description |
170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
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File Size |
588.13K /
4 Page |
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it Online |
Download Datasheet
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Price and Availability
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