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  avalanche-energy-rated Datasheet PDF File

For avalanche-energy-rated Found Datasheets File :: 13050    Search Time::3.985ms    
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    FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. FDU8874 FDD8874
OCR Text ... E AS PD TJ, T STG Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25 o C Operating and Storage Temperature 116 103 18 Figure 4 240 110 0.73 -55 to 175 A A A A mJ W W/ o C oC Ratings 30 20 Units V V Thermal C...
Description N-Channel PowerTrench MOSFET 30V/ 116A
N-Channel PowerTrench MOSFET 30V, 116A 35 A, 30 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

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    Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FDSS2407
OCR Text ...ed EAS PD TJ, TSTG Single Pulse Avalanche Energy ( Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 25oC, VGS = 5V, RJA = 55oC/W) 3.3 3.0 Figure 4 140 2.27 18 -55 to 150 A A A mJ W mW/oC oC Ratings 62 20 ...
Description N-Channel Dual MOSFET 3.3 A, 62 V, 0.11 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

File Size 616.67K  /  13 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDS3992_04 FDS3992 FDS3992NL FDS399204
OCR Text ...ed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Total Package Power Dissipation Derate above 25oC Operating and Storage Temperature 4.5 2.8 Figure 4 167 2.5 20 -55 to 150 A A A mJ W mW/oC o Ratings 100 20 Units V V C ...
Description Dual N-Channel PowerTrench? MOSFET 100V, 4.5A, 62m?/a>
Dual N-Channel PowerTrench㈢ MOSFET 100V, 4.5A, 62mз
Discrete Commercial N-Channel PowerTrench MOSFET, 100V, 4.5A, 0.062 Ohms @ VGS = 10V, SO-8 Package

File Size 576.88K  /  11 Page

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    NTD20N06L-D

ON Semiconductor
Part No. NTD20N06L-D
OCR Text ...5 c single pulse draintosource avalanche energy starting t j = 25 c (v dd = 25 vdc, v gs = 5.0 vdc, l = 1.0 mh, i l (pk) = 16 a, v ds = 60 vdc) e as 128 mj thermal resistance junctiontocase junctiontoambient (note 1.) junctiontoam...
Description Power MOSFET 20 Amps, 60 Volts, Logic Level N-Channel DPAK

File Size 85.22K  /  12 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDP8874_NL FDP8874 FDP8874NL
OCR Text ...ed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25oC Operating and Storage Temperature 114 102 16 Figure 4 105 110 0.73 -55 to 175 A A A A mJ W W/oC oC Ratings 30 20 Units V V Thermal Chara...
Description 30V N-Channel PowerTrench MOSFET

File Size 201.44K  /  10 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDP42AN15A0 FDB42AN15A0 FDP42AN15A0NL
OCR Text ...ed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 35 24 5 Figure 4 90 150 1.00 -55 to 175 A A mJ W W/oC o Ratings 150 20 Units V V A C Thermal Charac...
Description Discrete Automotive N-Channel PowerTrench MOSFET, 150V, 35A, 0.042 ohms @ Vgs = 10 V, TO-263/D2PAK Package

File Size 194.45K  /  11 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDP120AN15A0 FDD120AN15A FDD120AN15A0 FDD120AN15A0NL
OCR Text ...ed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 14 9.7 2.8 Figure 4 122 65 0.43 -55 to 175 A A A A mJ W W/oC o Ratings 150 20 Units V V C Thermal C...
Description Discrete Automotive N-Channel PowerTrench MOSFET, 150V, 14A, 0.120 Ohms @ VGS = 10V, TO-220 Package

File Size 187.05K  /  11 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDP038AN06A0_05 FDI038AN06A0 FDP038AN06A0 FDP038AN06A005
OCR Text ...ed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 80 17 Figure 4 625 310 2.07 -55 to 175 A A A mJ W W/oC oC Ratings 60 20 Units V V Thermal Characterist...
Description N-Channel PowerTrench? MOSFET 60V, 80A, 3.8m
N-Channel PowerTrench㈢ MOSFET 60V, 80A, 3.8mз

File Size 211.56K  /  10 Page

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    NTP27N06L-D NTB27N06L NTP27N06L

ITT, Corp.
ON Semiconductor
Part No. NTP27N06L-D NTB27N06L NTP27N06L
OCR Text ...5 c single pulse draintosource avalanche energy starting t j = 25 c (v dd = 50 vdc, v gs = 5.0 vdc, l = 0.3 mh, i l (pk) = 25 a,v ds = 60 vdc) e as 94 mj thermal resistance junctiontocase r q jc 1.7 c/w maximum lead temperature for...
Description Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220(27A, 60 V,逻辑电平,N通道,TO-220封装的功率MOSFET) 27 A, 60 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFET 27 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2PAK

File Size 83.52K  /  12 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ...evel of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regu...Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Char...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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