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ADPOW[Advanced Power Technology]
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Part No. |
ARF450
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OCR Text |
...
10
16
ID, DRAIN CURRENT (amperes)
TJ = -55C
ID, DRAIN CURRENT (amperes)
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % ...450
f = 81.36 MHz Push-Pull
GPS, COMMON SOURCE AMPLIFIER GAIN (dB)
600
14
12
VGS =... |
Description |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 500W 120MHz N-CHANNEL ENHANCEMENT MODE
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File Size |
176.59K /
4 Page |
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Advanced Power Technology Ltd.
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Part No. |
ARF449B
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OCR Text |
... 10 50 150 i d , drain current (amperes) v ds , drain-to-source voltage (volts) figure 4, typical maximum safe operating area v gs , gate-to-source voltage (volts) figure 3, typical transfer characteristics i d , drain current (amperes) v d... |
Description |
N-CHANNEL ENHANCEMENT MODE
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File Size |
58.92K /
4 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
CM450HA-5F
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OCR Text |
...Module.
Type CM Current Rating amperes 450 VCES Volts (x 50) 5
Sep.1998
MITSUBISHI IGBT MODULES
CM450HA-5F
HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25C unless otherwise specified
Ratings Junction Te... |
Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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File Size |
43.83K /
4 Page |
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POWEREX[Powerex Power Semiconductors]
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Part No. |
CM450HA-5F
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OCR Text |
...te Design Single IGBTMODTM
450 amperes/250 Volts
A B E S
E
D
C
Q - THD. (2 TYP.)
R R
G
E
C
GF
P - THD. (2 TYP.)
H J
N - DIA. (2 TYP.)
M
K
LABEL
L
Description: Powerex IGBTMODTM Modules are ... |
Description |
Trench Gate Design Single IGBTMOD 450 amperes/250 Volts Trench Gate Design Single IGBTMOD⑩ 450 amperes/250 Volts
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File Size |
75.76K /
4 Page |
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IXYS, Corp.
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Part No. |
IXGQ100N60PBD1
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OCR Text |
...45678910 v c e - volts i c - amperes v ge = 15v 13v 9v 11v 7v fig. 3. output characteristics @ 125 o c 0 10 20 30 40 50 60 70 80 90 ...450 4 6 8 10 12 14 16 18 20 r g - ohms t r - nanoseconds t j = 125 o c v ge = 15v v ce ... |
Description |
100 A, 600 V, N-CHANNEL IGBT TO-3P, 3 PIN
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File Size |
163.44K /
6 Page |
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IXYS, Corp. IXYS[IXYS Corporation]
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Part No. |
IXSP10N60B2D1 IXSA10N60B2D1
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OCR Text |
...haracte ristics @ 25 C
I C - amperes
12 10 8 6 4 2 0 0.5 1 1.5 2 2.5 3 3.5
I C - amperes
20 15 10 13V
11V
11V 9V
9V
...450 500 I C = 5A TJ = 125C VGE = 15V VCE = 480V I C = 10A
g f s - Siemens
I C - amperes Fig. 9... |
Description |
High Speed IGBT with Diode 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
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File Size |
585.11K /
6 Page |
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it Online |
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