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D2915 DM303006 P60N0 M93C66 C74HC2 F18004 ELECTRO M93C66
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  5v-0.5a Datasheet PDF File

For 5v-0.5a Found Datasheets File :: 39884    Search Time::3.906ms    
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    Cystech Electonics Corp...
Part No. MTB100N11RKJ3-0-T3-G
OCR Text ... 108m (typ) r dson @v gs =4.5v, i d =6a 123m (typ) g d s ordering information device package shipping mtb100n11rkj3-0-t3-g to-252 (pb-free lead plating & halogen-free package) 2500 pcs / tape & reel enviro...
Description N -Channel Enhancement Mode Power MOSFET

File Size 349.50K  /  9 Page

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    ISB-E48-0 ISB-E48-1

Sanyo Semicon Device
Part No. ISB-E48-0 ISB-E48-1
OCR Text ...UT1 VIN=3.0V ISB-E48-0 NchVDS=0.5V,VIN=2.0V ISB-E48-1 NchVDS=0.5V,VIN=3.0V IOUT2 TR1 Drain-to-source breakdown voltage Drain-to-source cutoff current Gate-to-source leakage current Gate-to-source cutoff voltage Drain-to-source on resistance...
Description Ultrathin Miniature Package Charger Circuit Voltage Sensor 3 P-channel MOSFETs

File Size 56.24K  /  6 Page

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    MTB09N06Q8-0-T3-G

Cystech Electonics Corp.
Part No. MTB09N06Q8-0-T3-G
OCR Text ... 7.3 m (typ) r dson @v gs =4.5v, i d =10a 8.4m (typ) environment friendly grade : s for rohs compliant products, g for rohs compli...0 v gate - source voltage v gs 20 continuous drain current @v gs ...
Description N-Channel Enhancement Mode Power MOSFET

File Size 470.23K  /  9 Page

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    Cystech Electonics Corp...
Part No. MTB2D5N03BE3-0-UB-X
OCR Text ...3.5 m (typ) r ds(on) @v gs =4.5v, i d =20a ? fast switching characteristic ? rohs compliant package symbol ...0-ub-x to-220 (rohs compliant) 50 pcs/tube, 20 tubes/box, 4 boxes / carton g gate ...
Description N-Channel Enhancement Mode Power MOSFET

File Size 348.91K  /  8 Page

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    Cystech Electonics Corp...
Part No. MTN10N60BE3-0-UB-X
OCR Text ... i d , drain current(a) v gs =4.5v 5v 5.5 v 6v i d =6a, v gs =10v static drain-source on-state resistance vs drain current 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-sou...
Description N-Channel Enhancement Mode Power MOSFET

File Size 398.07K  /  10 Page

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    Cystech Electonics Corp...
Part No. MTEA5N10J3-0-T3-G
OCR Text ... drain current(a) 10v 9v 8v 5.5v v gs =5v 6v 7v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 ...
Description N -Channel Enhancement Mode Power MOSFET

File Size 347.78K  /  9 Page

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    SBW13009-0

WINSEMI SEMICONDUCTOR COMPANY LIMITED
Part No. SBW13009-0
OCR Text ...urrent Gain Veb=9V,Ic=0V Vce=5V,Ic=5.0A Vce=5V,Ic=8.0A 10 6 4 Storage Time Fall Time Current Gain Band width Product VCC=5.0V,Ic=0.5A (UI9600) Vce=10V,Ic=0.5A s MHz Note : Pulse Test :Pulse width 300,Duty cycle 2% 2/5...
Description High voltage Fast Switching NPN Power Transistor

File Size 380.85K  /  5 Page

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    Cystech Electonics Corp...
Part No. MTN9N60BE3-0-UB-X
OCR Text ... v i d =4.5a, v gs =10v v gs =4.5v static drain-source on-state resistance vs drain current 0 200 400 600 800 1000 1200 0.01 0.1 1 10 i d , drain current(a) r ds(on) , static drain-source on- state resistance(m) v gs =10v drain curre...
Description N-Channel Enhancement Mode Power MOSFET

File Size 397.88K  /  10 Page

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    Yamaichi Electronics Co...
Part No. FPS009-4200-0
OCR Text ...a / 20mv max. voltage rating: 5v dc current rating: 0.5a max. operating temp. range: C30c to +85c mating cycles: 100 materials and finish insulator: lcp black (ul94v-0) contacts: copper alloy with selective gold features 2-po...
Description SD Card and MMC Reader (One Action Lock Type)

File Size 94.17K  /  2 Page

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    FPS009-2901-0

Yamaichi Electronics Co., Ltd.
Part No. FPS009-2901-0
OCR Text ... minute 100m at 1mA / 40mV max. 5V DC 0.5A -25C to +85C < 0.1mm 10,000 (office environment) FPS Series No. 009 - 2901 - 0 Number of Contacts Design No. 0 = Tape & Reel Packaging Materials and Finish Insulator: LCP glass filled...
Description SD Card & MMC Reader - Push / Push (Low Profile)

File Size 136.68K  /  2 Page

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