55ns pdf Datasheet P5 Description --- IC-ON-LINE


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55ns Datasheet PDF File

For 55ns Found Datasheets File :: 44+ Page :: | 1 | 2 | 3 | 4 | <5> |

					Alliance Semiconductor
Part No.	AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B-70TI AS29F200T-70TC AS29F200T-70TI AS29F200B-55TC AS29F200B-55TI AS29F200T-55TC AS29F200T-55TI AS29F200B-90TI AS29F200T-90TI AS29F200B-90TC
Description	5V 256K x 8 / 128K x 16 CMOS Flash EEPROM 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
File Size	189.87K / 20 Page	View it Online	Download Datasheet

					Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
Part No.	K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008C2C-GB55 K6T1008C2C-GF70 K6T1008C2C-GL70 K6T1008C2C-GP70 K6T1008C2C-GL55 K6T1008C2C-GB70 K6T1008C2C-TF70 K6T1008C2C-TB55 K6T1008C2C-TB70 K6T1008C2C-RF70 K6T1008C2C-P K6T1008C2C-B K6T1008C2C-F K6T1008C2C-DL70 K6T1008C2C-DL55 K6T1008C2C-DB70 K6T1008C2C-DB55 K6T1008C2C-L K6T1008C2C-NF700
Description	128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM 55ns; 128 x 8-bit low power CMOS static RAM 70ns; 128 x 8-bit low power CMOS static RAM
File Size	187.70K / 10 Page	View it Online	Download Datasheet

					White Electronic Designs Microchip Technology, Inc. Sharp, Corp. Electronic Theatre Controls, Inc. Raltron Electronics, Corp.
Part No.	WMS128K8-17FEM WMS128K8-17FM WMS128K8-55CLC WMS128K8-45CLCA WMS128K8-35CLCA WMS128K8-25CLCA WMS128K8-20CLC WMS128K8-15CLM WMS128K8-17CLC WMS128K8-17CLM WMS128K8-17CLI WMS128K8-15CLI WMS128K8-45DRCA WMS128K8L-35CLIA WMS128K8-25DJM WMS128K8-17FC WMS128K8L-25DJCA WMS128K8L-15CLM WMS128K8-17DJIA WMS128K8-17DJC WMS128K8-55FEI WMS128K8-55FM WMS128K8L-35CLCA WMS128K8L-15DJM WMS128K8L-15DJMA WMS128K8L-17DJM WMS128K8L-17DJIA WMS128K8L-25DJIA WMS128K8L-55DJIA WMS128K8L-20DJIA WMS128K8L-15DJIA
Description	55ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 17ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 15ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 x8 SRAM x8的SRAM 25ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 20ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
File Size	206.13K / 10 Page	View it Online	Download Datasheet

					White Electronic Designs ETC Electronic Theatre Controls, Inc.
Part No.	EDI88130LPSNI EDI88130CS EDI88130CSLM EDI88130CSL32M EDI88130CSNM EDI88130CSL32B EDI88130LPSL32I EDI88130CSCC EDI88130CSLB EDI88130CSL32C EDI88130CSL32I EDI88130LPSL32B EDI88130LPSL32C EDI88130LPSL32M EDI88130CSCM EDI88130CSFI EDI88130CSLC EDI88130CSTB EDI88130CSFB EDI88130CSNB EDI88130CSTC EDI88130CSCI EDI88130CSCB EDI88130CSFC EDI88130CSLI EDI88130CSNC EDI88130CSNI EDI88130CSFM EDI88130LPSCM EDI88130CSTI EDI88130LPSNB EDI88130LPSNC EDI88130LPSLM EDI88130CS17FI EDI88130LPS17FI EDI88130LPSTB EDI88130LPS17LB EDI88130CS17CI EDI88130LPS17CI EDI88130CS45TM EDI88130LPS45TM EDI88130CS25TM EDI88130CS15TM EDI88130LPS17FB EDI88130LPS17L32I EDI88130CS17L32M EDI88130LPS17L32C EDI88130CS17L32B EDI88130LPS20NB EDI88130CS17CC EDI88130LPS17CC EDI88130CS17NM EDI88130LPS17NM EDI88130CS45NB EDI88130CS35NB EDI88130LPS35NB EDI88130LPS55NB EDI88130LPS45NB EDI88130LPS17LI EDI88130CS45FB EDI88130LPS55FB EDI88130CS15FB EDI88130CS25FB EDI88130CS35FB EDI88130CS55FB EDI88130LPS15FB EDI88130LPS25FB EDI88130LPS35FB EDI88130LPS45FB
Description	25ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 45ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 17ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 128Kx8 Monolithic SRAM, SMD 5962-89598 128Kx8单片的SRAM，贴962-89598 128Kx8 Monolithic SRAM/ SMD 5962-89598 15ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 20ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 35ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 55ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
File Size	254.50K / 9 Page	View it Online	Download Datasheet

					NXP Semiconductors N.V. White Electronic Designs Corporation
Part No.	WS128K32N-35H1M WS128K32N-35H1C WS128K32N-17H1C WS128K32N-17H1M WS128K32-35 WS128K32-20 WS128K32-17 WS128K32-15 WS128K32-25 WS128K32N-45H1C WS128K32N-45H1M WS128K32L-35G2TM WS128K32-55 WS128K32L-45H1QA WS128K32L-20H1QA WS128K32L-55H1QA WS128K32L-15H1QA WS128K32L-35H1QA WS128K32L-17H1C WS128K32L-17H1CA WS128K32L-17H1M WS128K32L-17H1IA WS128K32L-17H1I WS128K32L-17H1MA WS128K32L-17H1Q WS128K32N-17H1I WS128K32N-17H1IA WS128K32N-17H1MA WS128K32N-17H1Q WS128K32N-177H1CA WS128K32N-17H1CA
Description	35ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595 15ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595 55ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595 20ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595 45ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595 128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????5ns锛? 128Kx32 SRAM Module(128Kx32???RAM妯″?锛???????0ns锛? x32 SRAM Module X32号的SRAM模块 128Kx32 SRAM Module(128Kx32静态RAM模块（存取时7ns 128Kx32 SRAM Module(128Kx32静态RAM模块（存取时0ns 128Kx32 SRAM Module(128Kx32静态RAM模块（存取时5ns 17ns; 5V power supply; 128K x 32 SRAM module, SMD 5962-93187 & 5962-95595
File Size	157.83K / 9 Page	View it Online	Download Datasheet

					White Electronic Designs ETC[ETC] Electronic Theatre Controls, Inc.
Part No.	EDI88512CA_LPA-B32 EDI88512CA_LPA-C EDI88512CA_LPA-F32 EDI88512CA_LPA-F36 EDI88512CA_LPA-K EDI88512CA_LPA-N EDI88512CA_LPA-N36 EDI88512CA_LPA-T EDI88512CANB EDI88512LPAKM EDI88512LPAKC EDI88512LPANI EDI88512CATB EDI88512LPATB EDI88512LPAF36M EDI88512LPAF36I EDI88512LPAF36C EDI88512LPAF36B EDI88512LPAF32M EDI88512LPAF32I EDI88512LPAF32C EDI88512LPAF32B EDI88512CAB32M EDI88512CA/LPA-C EDI88512CA/LPA-K EDI88512CA/LPA-N EDI88512CA/LPA-N36 EDI88512CAB32I EDI88512LPAB32I EDI88512CA/LPA-F36 EDI88512LPAB32B EDI88512LPAB32C EDI88512LPAB32M EDI88512CAF32B EDI88512CA/LPA-T EDI88512CA/LPA-B32 EDI88512CAB32C EDI88512LPANB EDI88512LPANC EDI88512CAN36B EDI88512CAN36C EDI88512CANC EDI88512LPAN36C EDI88512LPAN36B EDI88512LPAN36M EDI88512CANM EDI88512CANI EDI88512CAN36I EDI88512LPAN36I EDI88512CAN36M EDI88512CA/LPA-F32 EDI88512CAKI EDI88512LPA55B32B EDI88512LPA55B32I EDI88512LPA55B32C EDI88512LPA55CB EDI88512LPA55B32M EDI88512LPA55CC EDI88512LPA55CI EDI88512LPA55F32B EDI88512LPA55CM EDI88512LPA55F32I EDI88512LPA55F32C EDI88512LPA55F36B EDI88512LPA55F32M EDI88512LPA55F36I EDI88512LPA55F36C EDI88512LPA55F36M EDI88512LPA55KC EDI88512LPA55KB EDI88512LPA55KI EDI88512LPA55N36I EDI88512LPA55N36C EDI88512LP
Description	20ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 17ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 45ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 15ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 512Kx8 Monolithic SRAM SMD 5962-95600 512Kx8 Monolithic SRAM, SMD 5962-95600 SRAM 60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R NTC Thermistor; Series:PANR; Thermistor Type:NTC; Resistance:1kohm; Beta:3500; Package/Case:Radial; Leaded Process Compatible:Yes; Mounting Type:Through Hole; R/T Curve:M; Terminal Type:Radial Leaded RoHS Compliant: Yes 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器 60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP 静态存储器 55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
File Size	265.80K / 9 Page	View it Online	Download Datasheet

					VICOR[Vicor Corporation] DC/DC变换 Vicor, Corp. Analog Devices, Inc. Maxim Integrated Products, Inc.
Part No.	MI-J21-IA MI-J21-IZ MI-J21-MZ MI-J7N-IZ MI-J7N-MY MI-J2L-MY MI-J22-MA MI-J20-MA MI-J20-MY MI-J20-MZ MI-J2M-IA MI-J2M-IY MI-J2M-IZ MI-J2L-MA MI-J2L-MZ MI-J22-MY MI-J22-MZ MI-J51-MA MI-J51-MY MI-J51-MZ MI-J7Z-MZ MI-J00 MI-J20-IA MI-J20-IY MI-J20-IZ MI-J21-IY MI-J21-MA MI-J21-MY MI-J22-IA MI-J22-IY MI-J22-IZ MI-J23-IA MI-J23-IY MI-J23-IZ MI-J23-MA MI-J23-MY MI-J23-MZ MI-J24-IA MI-J24-IY MI-J24-IZ MI-J24-MA MI-J24-MY MI-J24-MZ MI-J2J-IA MI-J2J-IY MI-J2J-IZ MI-J2J-MA MI-J2J-MY MI-J2J-MZ MI-J2K-IA MI-J2K-IY MI-J2K-IZ MI-J2K-MA MI-J2K-MY MI-J2K-MZ MI-J2L-IA MI-J2L-IY MI-J2L-IZ MI-J2M-MA MI-J2M-MY MI-J2M-MZ MI-J2N-IA MI-J2N-IY MI-J2N-IZ MI-J2N-MA MI-J2N-MY MI-J2N-MZ MI-J2P-IA MI-J2P-IY MI-J2P-IZ MI-J2P-MA MI-J2P-MY MI-J2P-MZ MI-J2R-IA MI-J2R-IY MI-J2R-IZ MI-J2R-MA MI-J2R-MY MI-J2R-MZ MI-J2T-IA MI-J2T-IY MI-J2T-IZ MI-J2T-MA MI-J2T-MY MI-J2T-MZ MI-J2V-IA MI-J2V-IY MI-J2V-IZ MI-J2V-MA MI-J2V-MY MI-J2V-MZ MI-J2W-IA MI-J2W-IY MI-J2W-IZ MI-J2W-MA MI-J2W-MY MI-J2W-MZ MI-J2X-IA MI-J2X-IY MI-J2X-IZ MI-J2X-MA MI-J2X-MY MI-J2X-MZ MI-J2Y-IA MI-J2Y-IY MI-J2Y-IZ MI-J2Y-MA MI-J2Y-MY MI-J2Y-MZ MI-J2Z-IA MI-J2Z-IY MI-J2Z-IZ MI-J2Z-MA MI-J2Z-MY MI-J2Z-MZ MI-J50-IA MI-J50-IY MI-J50-IZ MI-J50-MA MI-J50-MY MI-
Description	RES,Wirewound,2KOhms,65WV,5 /-% Tol GT 8C 8#16 SKT RECP WALL RESISTOR SILICONE 12 OHM 10W RESISTOR SILICONE 15 OHM 10W XCR3032XL-10VQG44I Flash 16Mb PROM (ST Micro), Flash 32Mb PROM (ST Micro), Bar Graph Display; Display Technology:LED; Package/Case:20-DIP; Color:High Efficiency Red; Forward Voltage:2.2V; Light Emitting Area:10 segments Bar Graph Display; Display Technology:LED; Package/Case:20-DIP; Color:High Efficiency Red; Forward Voltage:2.0V; Light Emitting Area:10 segments Gate / Inverter Logic IC; Logic Type:Dual 4-Input NOR Gate; Logic Family:4000; Logic Base Number:4002; Package/Case:14-DIP BACKSHELL DB37 METALIZED PLASTIC Replaced by PTN78000A,PTN04050C : FLUKE-117 CALIBRATED BY NEWARK INONE SERVICES HVAC Digital Multimeter and Infrared Thermometer Combo Kit; RoHS Compliant: NA Bipolar Transistor; Collector Emitter Voltage, Vceo:800V; Transistor Polarity:NPN; Power Dissipation:70W; C-E Breakdown Voltage:1500V; DC Current Gain Min (hfe):5; Collector Current:8A; Package/Case:3-TO-3PML RESISTOR WIREWOUND 390 OHM 10W RF/Coaxial Connector; RF Coax Type:SMA; Contact Termination:Crimp; Body Style:Right Angle Plug; RG Cable Type:58, 58A, 58C, 141, 303, LMR195, Belden 7806A RoHS Compliant: Yes RESISTOR WIREWOUND 35 OHM 10W T-PNP-SI QUAD GEN PURPOSE T-NPN-SI-QUAD GEN PURP Amplifier, Other Bipolar Transistor; Current Rating:150mA; Voltage Rating:24V KPT 3C 3#20 SKT RECP D-SI 70PRV .1A Gate Logic IC; Logic Type:Gate; Logic Family:4000; Logic Base Number:4001; Package/Case:14-DIP; Number of Circuits:4; Mounting Type:Through Hole RoHS Compliant: Yes Darlington Bipolar Transistor; Mounting Type:Through Hole; Package/Case:TO-3; Current Rating:12A; Voltage Rating:100V RoHS Compliant: Yes Darlington Bipolar Transistor; Package/Case:TO-3; Mounting Type:Through Hole; Current Rating:12A; Voltage Rating:100V Thyristor; Current Rating:8A; Mounting Type:Through Hole; Package/Case:TO-64; Current, It av:8A; Repetitive Reverse Voltage Max, Vrrm:400V; Voltage Rating:400V Bipolar Transistor; Transistor Polarity:N Channel; C-E Breakdown Voltage:850V; DC Current Gain Min (hfe):5; Collector Current:15A; Package/Case:TO-3; Voltage Rating:450V Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:80V; Transistor Polarity:N Channel; Power Dissipation:0.8W; C-E Breakdown Voltage:80V; DC Current Gain Min (hfe):15; Collector Current:1A; Package/Case:TO-39 Bipolar Transistor; Transistor Polarity:PNP; Power Dissipation:5W; C-E Breakdown Voltage:320V; DC Current Gain Min (hfe):15; Collector Current:10A IC; Package/Case:12-lead quad in-line T-NPN-SI GEN PURP AMP Bipolar Transistor; Collector Emitter Voltage, Vceo:24V; Transistor Polarity:PNP; C-E Breakdown Voltage:12V; DC Current Gain Min (hfe):110; Collector Current:100mA; Package/Case:TO-5; Current Rating:0.1A; Voltage Rating:24V T-PNP- GE-AF PREAMP-DR-PO RESISTOR WIREWOUND 5.6K OHM 3W Bipolar Transistor; Current Rating:1.5A; Voltage Rating:50V T-NPN-SI-AF DRIVER ; Transistor Polarity:N Channel; C-E Breakdown Voltage:140V; DC Current Gain Min (hfe):20; Collector Current:12A; Package/Case:TO-3P; DC Current Gain Max (hfe):200; Mounting Type:Through Hole Single Digit Seven Segment Display; Number of Digits/Alpha:1; Digit/Alpha Height:7.62mm; Color:Red; Luminous Intensity (MSCP):500ucd LED-DISPLAY-RED RoHS Compliant: Yes Optoisolator; Collector Emitter Voltage, Vceo:30V; Transistor Polarity:NPN; Power Dissipation:250mW; C-E Breakdown Voltage:60V; DC Current Gain Min (hfe):50000; Collector Current:125mA; Package/Case:6-DIP RF Bipolar Transistor; Collector Emitter Voltage, Vceo:1V; Transistor Polarity:N Channel; Power Dissipation:5W; DC Current Gain Min (hfe):25; Collector Current:400mA; DC Current Gain Max (hfe):200; Power (Ptot):5W JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:5mA; Zero Gate Voltage Drain Current Max, Idss:15mA; Gate-Source Cutoff Voltage Max, Vgs(off):-6V; Package/Case:TO-92 Optocoupler; Optocoupler Output Type:Transistor; Isolation Voltage:1500Vrms; Package/Case:6-DIP; Mounting Type:Through Hole; C-E Breakdown Voltage:30V; DC Current Gain Min (hfe):50; Transistor Polarity:NPN OPTOISOLATOR/DARL NPN-Output dc-Input Optocoupler,1-CHANNEL,3.5kV ISOLATION,DIP Optocoupler; Optocoupler Output Type:Transistor; Isolation Voltage:7500Vrms; Package/Case:6-DIP; Collector Current:0.05A; Mounting Type:Through Hole; Voltage Rating:30V; Transistor Polarity:NPN Optocoupler; Optocoupler Output Type:Transistor; Isolation Voltage:7500Vrms; Package/Case:6-DIP; Collector Current:0.5A; Mounting Type:Through Hole; C-E Breakdown Voltage:80V; DC Current Gain Max (hfe):3.5; Transistor Polarity:NPN Replaced by PTN04050C : Bipolar Transistor; Package/Case:TO-3P; Current Rating:10A; Voltage Rating:800V T-NPN-SI W/ 10K RESISTOR T-NPN-SI COLOR TV OUTPUT TVS UNI-DIR 64V 1500W SMC RF Bipolar Transistor; Collector Emitter Voltage, Vceo:300mV; Power Dissipation, Pd:0.3W; DC Current Gain Min (hfe):350; C-E Breakdown Voltage:120V; Collector Current:100mA; DC Current Gain Max (hfe):700; Power (Ptot):300mW RoHS Compliant: Yes Bipolar Transistor; Collector Emitter Voltage, Vceo:80V; Transistor Polarity:NPN; Power Dissipation:800mW; C-E Breakdown Voltage:80V; DC Current Gain Min (hfe):1000; Collector Current:1A; Package/Case:3-TO-92 T-NPN-SI HI SPEED SWITCH T-NPN SI- HI VLTG/SPEED Bipolar Transistor; Package/Case:TO-3P; Current Rating:6A; Voltage Rating:800V Bipolar Transistor; Current Rating:12A; Voltage Rating:400V Bipolar Transistor; Collector Emitter Voltage, Vceo:450V; Transistor Polarity:NPN; Power Dissipation:150W; DC Current Gain Min (hfe):10; Collector Current:15A; Package/Case:3-TO-218; Terminal Type:3; Current Rating:15A Bipolar Transistor; Collector Emitter Voltage, Vceo:450V; Transistor Polarity:NPN; Power Dissipation:125W; Collector Current:8A; Package/Case:3-TO-218; Terminal Type:3; Current Rating:8A; Number of Cross References:81 SRAM Memory IC; Memory Type:MOS SRAM; Access Time, Tacc:55ns; Memory Configuration:4K x 1 Bipolar Transistor; Current Rating:4A; Voltage Rating:80V milirtary DC-CD Converters 10 to 50W TVS BIDIRECT 1500W 64V SMC TVS UNIDIRECT 1500W 7.0V SMC Military DC-DC Converters 10 to 50W 军事的DC - DC转换00W CAP/ 27P 3K K CF X9S 军事的DC - DC转换00W Military DC-DC Converters 10 to 50W 军事的DC - DC转换100W Military DC-DC Converters 10 to 50W 军事的DC - DC转换1050W IC; Mounting Type:Through Hole; Package/Case:9-SIP 军事的DC - DC转换00W Military DC-DC Converters 10 to 50W 军事DC - DC转换00W 32 MCELL 3 VOLT ZERO POWER ISP CPLD - NOT RECOMMENDED for NEW DESIGN 军事的DC - DC转换00W CONNECTOR ACCESSORY 军事的DC - DC转换00W FLUKE-116 CALIBRATED BY NEWARK INONE SERVICES RoHS Compliant: NA 军事的DC - DC转换00W Flash 16Mb PROM (ST Micro) 军事的DC - DC转换00W Bipolar Transistor; Collector Emitter Voltage, Vceo:30V; Power Dissipation, Pd:625mW; DC Current Gain Min (hfe):50; C-E Breakdown Voltage:30V; Collector Current:300mA; DC Current Gain Max (hfe):800; Power (Ptot):750mW 军事的DC - DC转换00W GT 8C 8#16 PIN RECP WALL 军事的DC - DC转换00W Gate Logic IC; Logic Type:Gate; Logic Family:4000; Logic Base Number:4011; Package/Case:14-DIP; Number of Circuits:4; Mounting Type:Through Hole 军事的DC - DC转换00W SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:8mA 军事的DC - DC转换00W Thyristor; Current Rating:10A; Mounting Type:Through Hole; Package/Case:TO-220; Current, It av:10A; Repetitive Reverse Voltage Max, Vrrm:600V; Voltage Rating:600V RoHS Compliant: Yes 军事的DC - DC转换00W
File Size	83.54K / 2 Page	View it Online	Download Datasheet

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