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SANYO
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| Part No. |
5HP02SP
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| OCR Text |
...)1 RDS(on)2 ID=-1mA, VGS=0 VDS=-50v, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=-100A VDS=-10V, ID=-70mA ID=-70mA, VGS=-10V ID=-40mA, VGS=-4V -1 0.12...140ma VDS=-10V, VGS=-10V, ID=-140ma VDS=-10V, VGS=-10V, ID=-140ma IS=-140ma, VGS=0 Conditions Rating... |
| Description |
PicoMOSFET Series
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| File Size |
39.64K /
4 Page |
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SANYO
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| Part No. |
5LP02N
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| OCR Text |
...)2 RDS(on)3 ID=-1mA, VGS=0 VDS=-50v, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=-100A VDS=-10V, ID=-70mA ID=-70mA, VGS=-4V ID=-40mA, VGS=-2.5V ID=-10m...140ma VDS=-10V, VGS=-10V, ID=-140ma VDS=-10V, VGS=-10V, ID=-140ma IS=-140ma, VGS=0 Conditions Rating... |
| Description |
PicoMOSFET Series
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| File Size |
40.81K /
4 Page |
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it Online |
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Sanyo Semicon Device
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| Part No. |
5LP02SP
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| OCR Text |
...)2 RDS(on)3 ID=-1mA, VGS=0 VDS=-50v, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=-100A VDS=-10V, ID=-70mA ID=-70mA, VGS=-4V ID=-40mA, VGS=-2.5V ID=-10m...140ma VDS=-10V, VGS=-10V, ID=-140ma VDS=-10V, VGS=-10V, ID=-140ma IS=-140ma, VGS=0 Conditions Rating... |
| Description |
Ultrahigh-Speed Switching Applications
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| File Size |
169.21K /
4 Page |
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it Online |
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Diodes Inc.
Diodes, Inc.
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| Part No. |
DMN5L06T-7
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| OCR Text |
...25c i dss 0.1 1 500 a v ds = 50v, v gs = 0v v ds = 20v, v gs = 0v v ds = 50v, v gs = 0v gate-body leakage @ t a = 25c @ t a = 85c i g...140ma d i = 280ma d new product t , channel temperature (c) fig. 3 gate threshold voltage vs. channe... |
| Description |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 280 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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| File Size |
130.80K /
5 Page |
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it Online |
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Diodes Inc.
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| Part No. |
DMN5L06DWK-7
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| OCR Text |
...t c = 25c i dss 60 na v ds = 50v, v gs = 0v gate-body leakage i gss 1 500 50 a na na v gs = 12v, v ds = 0v v gs = 10v, v ds = 0v v gs ...140ma d i = 280ma d t , channel temperature ( c) fig. 7 ch static drain-source on-state resistance ... |
| Description |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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| File Size |
129.00K /
5 Page |
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it Online |
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Diodes Inc.
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| Part No. |
DMN5L06WK-7
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| OCR Text |
...t c = 25c i dss 60 na v ds = 50v, v gs = 0v gate-body leakage i gss 1 500 50 a na na v gs = 12v, v ds = 0v v gs = 10v, v ds = 0v v gs ...140ma d i = 280ma d t , channel temperature ( c) fig. 7 ch static drain-source on-state resistance ... |
| Description |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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| File Size |
127.30K /
5 Page |
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it Online |
Download Datasheet |
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Panasonic
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| Part No. |
2SD1269
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| OCR Text |
...i c /i b =10(i b1 =? b2 ) v cc =50v t c =25?c t stg t f t on 0.01 1 0.1 1 10 100 10 100 1 000 collector current i c (a) collector-emitter voltage v ce (v) non repetitive pulse t c =25?c i cp i c t=0.5ms t=10ms t=1ms dc
2sd1269 3 s... |
| Description |
Power Device - Power Transistors - General-Purpose power amplification
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| File Size |
90.96K /
4 Page |
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it Online |
Download Datasheet |
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