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5.5-9ghz Datasheet PDF File

For 5.5-9ghz Found Datasheets File :: 808 Search Time::1.61ms
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				AVAGO TECHNOLOGIES LIMITED
Part No.	MGA-31189-BLKG
OCR Text	...ma 150 v d,max device voltage v 5.5 p d power dissipation [2] mw 825 p in,max cw rf input power dbm 25 t j,max junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance thermal resistance [3] (v d = 5.0v, t c...
Description	0.25W High Gain Driver Amplifier
File Size	433.48K / 15 Page	View it Online	Download Datasheet

				AVAGO TECHNOLOGIES LIMITED AVAGO TECHNOLOGIES LIMI...
Part No.	MGA-30489-BLKG MGA-30489-TR1G
OCR Text	...thermal resistance [3] (v d = 5.0 v) jc = 50.50c/w notes: 1.f f operationfoffthisfdevicefinfexcessfoffanyfoff theseflimitsfmayfcausefpermanentfdamage 2.f sourcefleadftemperaturefisf25c.fderatef 19.8mw/cfforftlf>f54.56c 3.f thermalfresi...
Description	0.25W Driver Amplifier
File Size	672.28K / 18 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP193W Q62702-F1577
OCR Text	...apacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain \|...
Description	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
File Size	60.05K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFP193 Q62702-F1282 BFP193Q62702-F1282
OCR Text	...apacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain \|...
Description	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
File Size	60.37K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1359 BFG19S BFG19
OCR Text	... Values typ. max. Unit fT 4 5.5 0.85 0.4 4.6 - GHz pF 1.4 dB 2.5 4 - IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Em...
Description	NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) NPN Silicon RF Transistor (For low noise low distortion broadband amplifiers in antenna) From old datasheet system NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna)
File Size	49.50K / 6 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon Technologies AG
Part No.	Q62702-F1382 BFP183
OCR Text	...ion Symbol Values 12 20 20 2 65 5 mW 250 150 - 65 ... + 150 - 65 ... + 150 295 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 76 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Juncti...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管（对于低噪声，高增益2毫安0毫安的集电极电流宽带放大器） NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) From old datasheet system
File Size	60.49K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1492 BFR182W
OCR Text	...apacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 3 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 1) Gms 19 - IC = 10 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt, ZL = ZLopt Power gain 2) Gma ...
Description	NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) From old datasheet system
File Size	55.96K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1494 BFR280W
OCR Text	...urrent gain IC = 3 mA, VCE = 5 V Semiconductor Group 2 Dec-11-1996 BFR 280W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max....
Description	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems From old datasheet system
File Size	56.22K / 7 Page	View it Online	Download Datasheet

				AVAGO TECHNOLOGIES LIMITED
Part No.	MGA-31289-BLKG MGA-31289-TR1G
OCR Text	...ma 165 v d,max device voltage v 5.5 p d power dissipation (2) mw 907.5 p in cw rf input power dbm 25 t j junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance thermal resistance [3] (v d = 5.0v, t c = 85...
Description	0.25W High Gain Driver Amplifier
File Size	444.23K / 13 Page	View it Online	Download Datasheet

				http:// SIEMENS[Siemens Semiconductor Group]
Part No.	BFR280 Q62702-F1298
OCR Text	...urrent gain IC = 3 mA, VCE = 5 V Semiconductor Group 2 Dec-11-1996 BFR 280 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. ...
Description	From old datasheet system NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
File Size	57.01K / 7 Page	View it Online	Download Datasheet

For 5.5-9ghz Found Datasheets File :: 808 Search Time::1.61ms
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