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  5.08 12 180 Datasheet PDF File

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    2SJ532

HITACHI[Hitachi Semiconductor]
Part No. 2SJ532
OCR Text ...aracteristics -50 -10 V -8 V -4.5 V -50 Typical Transfer Characteristics V DS = -10 V Pulse Test Tc = -25 C 25 C (A) ID Drain Current ...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) -5, -10 A Forward T...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.69K  /  9 Page

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    2SJ542

HITACHI[Hitachi Semiconductor]
Part No. 2SJ542
OCR Text ... -12 ID (A) -16 -3.5 V -16 -12 Tc = 75C Drain Current -8 -2.5 V -4 VGS = -2 V 0 -2 -4 -6 Drain to Source Voltage -8...08 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 100 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.62K  /  9 Page

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    2SJ543

HITACHI[Hitachi Semiconductor]
Part No. 2SJ543
OCR Text ...aracteristics -50 -10 V -8 V -4.5 V -50 Typical Transfer Characteristics V DS = -10 V Pulse Test Tc = -25 C 25 C (A) ID Drain Current ...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) -5, -10 A Forward T...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.32K  /  9 Page

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    2SJ551 2SJ551L 2SJ551S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ551 2SJ551L 2SJ551S
OCR Text ...V -12 ID (A) -16 -3.5 V -16 -12 Tc = 75C Drain Current -8 -2.5 V -4 VGS = -2 V 0 -2 -4 -6 Drain to Source Voltage -8...08 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 100 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 54.47K  /  9 Page

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    2SJ552 2SJ552L 2SJ552S 2SJ552L/S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ552 2SJ552L 2SJ552S 2SJ552L/S
OCR Text ...aracteristics -50 -10 V -8 V -4.5 V -50 Typical Transfer Characteristics V DS = -10 V Pulse Test Tc = -25 C 25 C (A) ID Drain Current ...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) -5, -10 A Forward T...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
Power switching MOSFET

File Size 55.15K  /  9 Page

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    2SJ554

HITACHI[Hitachi Semiconductor]
Part No. 2SJ554
OCR Text ...put Characteristics -50 -8 V -3.5 V -50 Typical Transfer Characteristics V DS = -10 V I D (A) -5 V -30 -4 V VGS = -10 V -20 -3 V ...08 I D = -50 A V GS = -4 V 0.04 -10 A -20 A -50 A -10,-20A Tc = -25 C 10 3 1 0.3 0.1 -0.1 -0.3...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.62K  /  9 Page

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    2SJ567

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ567
OCR Text ... V) Enhancement-model: Vth = -1.5 ~ -3.5 V (VDS = -10 V, ID = -1 mA) Industrial Applications Unit: mm Maximum Ratings (Ta = 25C) Charact...08-12 2SJ567 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain c...
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (ヰ-MOSV)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV)

File Size 237.21K  /  7 Page

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    2SJ76 2SJ77 2SJ78 2SJ79

HITACHI[Hitachi Semiconductor]
Part No. 2SJ76 2SJ77 2SJ78 2SJ79
OCR Text ...5 120 4.8 Max -- -- -- -- -- -1.5 -2.0 -- -- -- Unit V V V V V V V mS pF pF I G = 10 A, VDS = 0 I D = -10 mA, VDS = -10 V*1 I D = -10 mA, VG...08 +0.1 4.44 0.2 1.26 0.15 6.4 +0.2 -0.1 18.5 0.5 15.0 0.3 1.27 2.7 MAX 14...
Description Silicon P-Channel MOS FET

File Size 32.97K  /  6 Page

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    2SK215 2SK214 2SK213 2SK216

Hitachi,Ltd.
Hitachi Semiconductor
Part No. 2SK215 2SK214 2SK213 2SK216
OCR Text ... 40 90 2.2 Max -- -- -- -- -- 1.5 2.0 -- -- -- Unit V V V V V V V mS pF pF I G = 10 A, VDS = 0 I D = 10 mA, VDS = 10 V *1 I D = 10 mA, VGD =...08 +0.1 4.44 0.2 1.26 0.15 6.4 +0.2 -0.1 18.5 0.5 15.0 0.3 1.27 2.7 MAX 14...
Description Silicon N-Channel MOS FET 硅N沟道场效应晶体管
Silicon N Channel MOS FET

File Size 32.89K  /  6 Page

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