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SEME-LAB[Seme LAB]
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| Part No. |
2N6245
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| OCR Text |
...)
Bipolar PNP Device. VCEO = 330V IC = 1A
All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications
4.83 (0.190) 5.33 (0.210) 9.14 (0.360)... |
| Description |
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package.
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| File Size |
10.34K /
1 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SK3043
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| OCR Text |
... 150 100 50 0 0
VDS=90V 225V 330V
Switching time td(on),tr,tf,td(off) (ns)
100
15
Ciss 300 100 30 10 3 1 0 50 100 150 200 250 Coss Crss
80
td(off)
10
60 tr 40 tf td(on) 20
VGS
5
10
20
30
40
50... |
| Description |
Silicon N-Channel Power F-MOS FET
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| File Size |
44.70K /
3 Page |
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it Online |
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A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP2761I-A
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| OCR Text |
...V) C iss
12
C (pF)
V DS =330V V DS =410V V DS =520V
8
C oss
100
4
C rss
0
0 10 20 30 40 50 60 70 80 1
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
58.36K /
4 Page |
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it Online |
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A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP2761R-A
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| OCR Text |
...
I D =10A
12
C iss V DS =330V V DS =410V V DS =520V
C (pF)
8
100
C oss
4
C rss
0 0 20 40 60 80 1 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Char... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
55.94K /
4 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT5010JLL_04 APT5010JLL APT5010JLL04
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| OCR Text |
...NDUCTIVE SWITCHING @ 125C VDD = 330V, VGS = 15V ID = 41A, RG = 5
MIN
TYP
MAX
UNIT
4360 895 60 95 24 50 11 13 25 3 485 455 755 530
MIN TYP MAX UNIT Amps Volts ns C V/ns nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge... |
| Description |
POWER MOS 7 MOSFET
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| File Size |
170.49K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTM50HM38F
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| OCR Text |
...itching @ 25C VGS = 15V, VBus = 330V ID = 90A, RG = 2 Inductive switching @ 125C VGS = 15V, VBus = 330V ID = 90A, RG = 2 Min Typ 11200 2400 180 246 66 130 18 35 87 77 1510 1452 2482 1692 J J ns Max Unit pF
nC
Source - Drain diode rati... |
| Description |
Full - Bridge MOSFET Power Module
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| File Size |
291.14K /
6 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CT20TM-8
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| OCR Text |
...xe
RECOMMEND CONDITION VCM = 330V IP = 120A CM = 700F VGE = 28V
MAXIMUM CONDITION 360V 130A 800F
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse ga... |
| Description |
STROBE FLASHER USE
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| File Size |
24.75K /
2 Page |
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it Online |
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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CT20TM-8
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| OCR Text |
...xe
RECOMMEND CONDITION VCM = 330V IP = 120A CM = 700F VGE = 28V
MAXIMUM CONDITION 360V 130A 800F
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse ga... |
| Description |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
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| File Size |
27.51K /
2 Page |
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it Online |
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