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ST Microelectronics
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Part No. |
STRH100N6FSY2
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OCR Text |
...rain (?miller?) charge v dd = 30v, i d = 40a, v gs =12v 178.5 32.6 53 nc nc nc r g gate input resistance f=1mhz gate dc bias=0 test sig...rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80a, di/dt = 100a... |
Description |
80 A, 60 V, N-CHANNEL, Si, POWER, MOSFET, TO-254AA HERMETIC SEALED PACKAGE-3
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File Size |
200.78K /
9 Page |
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it Online |
Download Datasheet
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NXP Semiconductors N.V.
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Part No. |
BYR29X-800
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OCR Text |
...se recovery time i f =1a; v r =30v; di f /dt = 100 a/s; t j =25c; see figure 8 ; see figure 7 - 6075ns
byr29x-800 all information pro...rrm repetitive peak reverse voltage - 800 v v rwm crest working reverse voltage - 800 v v r reverse ... |
Description |
Ultrafast power diode 8 A, 800 V, SILICON, RECTIFIER DIODE, TO-220
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File Size |
124.10K /
12 Page |
View
it Online |
Download Datasheet
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Price and Availability
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