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  30a 800v 1000v Datasheet PDF File

For 30a 800v 1000v Found Datasheets File :: 263    Search Time::3.937ms    
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    MCC[Micro Commercial Components]
Part No. RL104 RL105 RL107 RL101 RL102 RL103 RL106
OCR Text ...Current Peak Forward Surge IFSM 30a 8.3ms, half sine Current Maximum 1.1V IFM = 1.0A; Instantaneous VF Forward Voltage TJ = 25C* Maximum DC Reverse Current At IR 5.0A TJ = 25C Rated DC Blocking 50A TJ = 125C Voltage Typical Junction CJ 15pF...
Description 1 Amp Rectifier 50 - 1000 Volts

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Part No. APTM120A15F
OCR Text ...t V A m V nA VGS = 10V, ID = 30a VGS = VDS, ID = 10mA VGS = 30V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Q...800v ID = 60A R G = 1.2 Inductive switching @ 25C VGS = 15V, VBus = 800v ID = 60A, R G = 1.2 Inducti...
Description Phase leg MOSFET Power Module

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Part No. APTM120DA15
OCR Text ...t V A m V nA VGS = 10V, ID = 30a VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs ...800v ID = 60A R G = 1.2 Inductive switching @ 25C VGS = 15V, VBus = 800v ID = 60A, R G = 1.2 Inducti...
Description Boost chopper MOSFET Power Module

File Size 299.61K  /  6 Page

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    IHW15N120R2

Infineon Technologies AG
Part No. IHW15N120R2
OCR Text ...10C IC, COLLECTOR CURRENT 30a IC, COLLECTOR CURRENT 10A 50s 20A Ic 10A 200s 1A 1ms 10ms 0A 10Hz DC 100Hz 1kHz 1...800v 900V TJ, JUNCTION TEMPERATURE Figure 15. Typical turn-off energy as a function of junctio...
Description Reverse Conducting IGBT with monolithic body diode

File Size 361.77K  /  12 Page

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    IHW30N120R2

Infineon Technologies AG
Part No. IHW30N120R2
OCR Text ...260 W C V Unit V A VCE 1200V IC 30a VCE(sat),Tj=25C 1.65V Tj,max 175C Marking H30R1202 Package PG-TO-247-3-21 C G E PG-TO-247-3-21...800v 900V TJ, JUNCTION TEMPERATURE Figure 15. Typical turn-off energy as a function of junctio...
Description Reverse Conducting IGBT with monolithic body diode

File Size 383.17K  /  12 Page

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    IHW30N120R

Infineon Technologies AG
Part No. IHW30N120R
OCR Text ...ns Type IHW30N120R VCE 1200V IC 30a VCE(sat),Tj=25C 1.55V Tj,max 175C Marking H30R120 Package PG-TO-247-3-21 G E PG-TO-247-3-21 ...800v TJ, JUNCTION TEMPERATURE Figure 15. Typical turn-off energy as a function of junction temper...
Description IGBT with monolithic body diode for soft switching Applications

File Size 1,001.42K  /  12 Page

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    IHW30N90T

Infineon Technologies AG
Part No. IHW30N90T
OCR Text ... ZCS Type IHW30N90T VCE 900V IC 30a VCE(sat),Tj=25C 1.5V Tj,max 175C Marking H30T90 Package PG-TO-247-3-21 C G E PG-TO-247-3-21 ...800v TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junctio...
Description Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode

File Size 325.94K  /  12 Page

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    STI50DE100

STMicroelectronics
Part No. STI50DE100
OCR Text ...C = 50A IB = 10A VGS = 10V_IC = 30a IB = 3A VGS = 10V_IC = 50A VCS = 1V VGS = 10V_IC = 30a VCS = 1V VGS = 10V_ IC = 50A IB = 10A VGS = 10V_ ...800v tp = 4s IC = 50A IC = 25A IB = 5A VGS = 10V 3 3 6 2.2 1.4 3.7 2500 4.5 1.3 1.1 7 13 V V V pF Mi...
Description Hybrid Emitter Switched Bipolar Transistor ESBT 1000 V - 50 A - 0.026 ohm

File Size 285.65K  /  11 Page

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    Infineon
Part No. IHW15T120
OCR Text ...10s IC, COLLECTOR CURRENT 30a T C =80C IC, COLLECTOR CURRENT 50s 1A 200s 500s 2ms 0,1A DC 20A T C =110C Ic 10A I...800v TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junctio...
Description IGBTs & DuoPacks - 15A / 1200V IGBT and 9A / 1200V Diode in DuoPack
IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode

File Size 335.04K  /  14 Page

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