2080 pdf Datasheet P5 Full Text Search --- IC-ON-LINE


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2080 Datasheet PDF File

For 2080 Found Datasheets File :: 1637 Search Time::2.735ms
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				飞思卡尔半导体(中国)有限公司 Freescale Semiconductor, Inc Freescale (Motorola)
Part No.	MRF6S21140 MRF6S21140HR3 MRF6S21140HSR3
OCR Text	...1200 mA ACPR -40 -44 2220 2080 2100 2120 2140 2160 2180 2200 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 30 Watts Avg. 15 14.9 Gps, POWER GAIN (dB) 14.8 14.7 14.6 14.5 AC...
Description	N-Channel Enhancement-Mode Lateral MOSFETs N沟道增强型MOSFET的外
File Size	460.17K / 12 Page	View it Online	Download Datasheet

				MCC[Micro Commercial Components] Micro Commercial Components Corp.
Part No.	MBRB2030CT MBRB2035CT MBRB20100CT MBRB2080CT MBRB2020CT MBRB2040CT MBRB2045CT MBRB2060CT B2045CT
OCR Text	...04 .02 .01 .2 .3 .4 .5 .6 .7 .8 2080-20100CT .2 TJ=25C mAmps .1 .06 .04 .02 .01 .006 .004 4 .002 .001 20 50 75 2060CT 10 6 4 2 1 .6 .4 MCC Figure 2 Typical Reverse Characteristics 100 Volts 125 150 175 Volts Instantaneous Fo...
Description	CAP 0.1UF 25V 10% X7R SMD-0805 T&R-7IN-PA NI-SN 20 Amp Schottky Barrier Rectifier 20 to 100 Volts CAP 1000PF 50V 10% X7R SMD-0805 T&R-7IN-PA NI-SN CAP 0.1UF 25V 10% X7R SMD-0805 T&R-7IN-PA NI-SN
File Size	95.07K / 2 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	KTY81-222 KTY81-252 KTY81-251 KTY81-221 KTY81-220 KTY81-210 KTY81-2 KTY81-250 NXPSEMICONDUCTORS-KTY81-220
OCR Text	...7 1367 1495 1630 1772 1922 2000 2080 2245 2417 2597 2785 2980 3182 3392 3607 3817 3915 4008 4166 4280 MAX. 1009 1059 1165 1277 1396 1523 1656 1797 1944 2020 2102 2272 2451 2637 2832 3035 3246 3466 3691 3912 4016 4114 4283 4407 TEMP. ERROR (...
Description	Silicon temperature sensors(硅温度传感器)
File Size	94.53K / 16 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] MITSUBIAHI
Part No.	MH16V6445B MH16V6445BWJ-6 MH16V6445BWJ-5
OCR Text	...imits Max Typ Vcc 0.4 10 160 20 2080 1920 16 8 1600 1440 2080 1920 Unit V V uA uA uA mA -5 -6 (Note 3,4,5) /RAS, /CAS cycling tRC=tWC=min. output open /RAS=/CAS =VIH, output open /RAS=/CAS=WEVcc -0.2, output open Supply curr...
Description	HYPER PAGE MODE 1073741824 - BIT ( 16777216 - WORD BY 64 - BIT ) DYNAMIC RAM
File Size	126.00K / 22 Page	View it Online	Download Datasheet

				VISAY[Vishay Siliconix]
Part No.	SI4684DY
OCR Text	...V, VGS = 4.5 V, ID = 11 A 3 2.8 2080 340 135 30 14 3 2.8 nC pF Notes a. Pulse test; pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 73360 S-50586Rev....
Description	N-Channel 30-V (D-S) MOSFET
File Size	193.70K / 3 Page	View it Online	Download Datasheet

				Freescale (Motorola) MOTOROLA[Motorola Inc] Motorola, Inc
Part No.	MRF21010 MRF21010LR MRF21010LS MRF21010LSR1 MRF21010LR1
OCR Text	...) 40 35 30 25 20 15 10 5 0 2000 2080 2110 2140 2170 f, FREQUENCY (MHz) 2200 Gps IMD IRL VDD = 28 Vdc, Pout = 10 W (PEP), IDQ = 100 mA Two Tone Measurement, 100 kHz Tone Spacing 0 -5 -10 -15 -20 -25 -30 -35 -40 2280 30 VDD = 28 Vdc, IDQ = 1...
Description	2170 MHz, 10 W, 28 V Lateral N–Channel Broadband RF Power MOSFET RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	538.54K / 8 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF5P20180HR6
OCR Text	...0 1960 1980 2000 2020 2040 2060 2080 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance 16 15.5 G ps , POWER GAIN (dB) 15 IDQ = 2400 mA 2000 mA 1600 mA 1200 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) ...
Description	RF Power Field Effect Transistor
File Size	360.15K / 12 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	PEF2045 PEB2045-N PEB2045 PEF2045-N PEF2045-P PEB2045-P Q67100-H8602 Q67100-H6055 Q67100-H6056 Q67100-H8322
OCR Text	..., for the analog line. SBC (PEB 2080), IEC (PEB 2090), IBC (PEB 2095) and ICC (PEB 2070) are the layer-1 and layer-2 ISDN devices for the digital line. The peripheral board controller PBC (PEB 2050) multiplexes the different lines in a subs...
Description	Memory Time Switch CMOS (MTSC)
File Size	472.53K / 53 Page	View it Online	Download Datasheet

				Freescale (Motorola) MOTOROLA[Motorola Inc] Motorola, Inc
Part No.	MRF21090 MRF21090R3 MRF21090SR3
OCR Text	...e Spacing -20 -25 -30 IMD 0 -35 2080 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 2200 , DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 30 VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz...
Description	2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET RF Power Field Effect Transistors
File Size	553.11K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. Motorola, Inc MOTOROLA[Motorola Inc]
Part No.	MRF21125S MRF21125 MRF21125SR3
OCR Text	...dB) 50 40 35 30 25 20 15 10 5 0 2080 2100 2120 2160 2140 f, FREQUENCY (MHz) 2180 0 -5 -10 -15 -20 Gps -25 -30 -35 -40 2200 160 Pout , OUTPUT POWER (WATTS) 144 128 112 96 80 64 48 32 16 0 VDD = 28 Vdc IDQ = 1600 mA f = 2120 MHz Pout ...
Description	RF POWER FIELD EFFECT TRANSISTORS S BAND, Si, N-CHANNEL, RF POWER, MOSFET MRF21125, MRF21125S, MRF21125SR3 2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs
File Size	378.36K / 12 Page	View it Online	Download Datasheet

For 2080 Found Datasheets File :: 1637 Search Time::2.735ms
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