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  200v us Datasheet PDF File

For 200v us Found Datasheets File :: 2012    Search Time::1.453ms    
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    700-SKOC1Z25 700-SKOC2Z25 700-N40 700-N41 700-SKON2Z25 700-SKICA18 700-SKICZ24 199-DR1 700-SKOZ2Z25 700-HN121

Allen-Bradley
Part No. 700-SKOC1Z25 700-SKOC2Z25 700-N40 700-N41 700-SKON2Z25 700-SKICA18 700-SKICZ24 199-DR1 700-SKOZ2Z25 700-HN121
OCR Text ...2 A at 5...48V DC 1.5 A at 48...200v DC 5...24V DC Rated Input Control Voltage Factory-stocked item (Single Pack) Cat. No. 700-SKOZ2Z...us) Output dv/dt (V/us) Output I2t (A2S) Output Tj (C) Max. Insulation resistance Dielectric strengt...
Description Solid-State Relays
   Solid-State Relays

File Size 366.00K  /  5 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. SGR2N60UFD SGR2N60UFDTM SGR2N60UFDTF
OCR Text ...TC = 25 TC = 100 10 10 V R = 200v IF = 2A T C = 25 T C = 100 1 0.1 0 1 2 3 Reverse Recovery Current, Irr [A] 1 100 Forward C...us] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 120 100 V R = 200v ...
Description    Ultra-Fast IGBT
Discrete, High Performance IGBT with Diode

File Size 537.33K  /  8 Page

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    Fairchild Semiconductor Corporation
Part No. SGL15N60RUFD
OCR Text ... Tc =25C Tc =100C IF=15A, VR=200v Tc =25C -di/dt=200A/us Tc =100C Tc =25C Tc =100C Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge THERMAL RESISTANCE Symbol RJC RJC RJA RCS Characteristics J...
Description CO-PAK IGBT(CO-PAK绝缘栅双极晶体管(IGBT))

File Size 300.55K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. SGF40N60UFD SGF40N60
OCR Text ... Tc =25C Tc =10 C IF=15A, VR=200v Tc =25C -di/dt=200A/us Tc =10 C Tc =25C Tc =100C Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge THERMAL RESISTANCE Symbol RJC RJC RJA Characteristics Junct...
Description High Speed Switching

File Size 356.12K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. SGF15N60RUFD SGF15N60RUFDTU
OCR Text ...5 T C = 100 ------ 100 VR = 200v IF = 15A TC = 25 TC = 100 ------ Reverse Recovery Current, Irr [A] 0 1 2 3 Forward Current, IF ...us] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 800 V R = 200v IF = 15...
Description Discrete, Short Circuit Rated IGBT with Diode

File Size 668.85K  /  8 Page

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    Fairchild Semiconductor, Corp.
Part No. SGF23N60UFDTU
OCR Text ...0 1000 0 20 40 60 80 100 v r = 200v i f = 12a t c = 25 t c = 100 reverce recovery time, t rr [ns] di/dt [a/us] 100 1000 0 100 200 300 400 500 600 v r = 200v i f = 12a t c = 25 t c = 100 stored recovery charge...
Description 23 A, 600 V, N-CHANNEL IGBT TO-3PF, 3 PIN

File Size 635.01K  /  10 Page

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    SGH80N60UFD SGH80N60UFDTU

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
Part No. SGH80N60UFD SGH80N60UFDTU
OCR Text ...rward Current, I F [A] V R = 200v IF = 25A T C = 25 T C = 100 10 10 1 0 1 2 3 1 100 1000 Forward Voltage Drop, VF [V] di/dt [A/us] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 1000 120...
Description Discrete, High Performance IGBT with Diode
Ultrafast IGBT
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 80 A, 600 V, N-CHANNEL IGBT

File Size 642.66K  /  8 Page

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    FAIRCHILD SEMICONDUCTOR CORP
Part No. FGAF40N60UFDTUNL
OCR Text ...c (a) 0 306090120 0 3 6 9 12 15 200v 300v vcc=100v common emitter r l =15 ? (tc=25 ) gate-emitter voltage, v ge (v) gate charge, qg (nc)...us] 200 400 600 800 1000 0 200 400 600 800 v r = 200v i f = 15a t c = 25 t c = 100 sto...
Description Ultrafast IGBT; Package: TO-3PF; No of Pins: 3; Container: Rail

File Size 710.49K  /  10 Page

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    LQA10T300

Power Integrations, Inc.
Part No. LQA10T300
OCR Text ...ime, di f /dt =200a/ s v r =200v,i f =10a t j =125 c - 24 - ns q rr t j =25 c - 10.2 16 nc reverse recovery charge, di f...us di f /dt=500a/us figure 7. typical q rr vs i f at t j =125 c 0 10 20 30 40 50 60 70 80 02468...
Description 300 V, 10 A Q-Series Diode

File Size 112.61K  /  7 Page

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    FAIRCHILD SEMICONDUCTOR CORP
Part No. SGP6N60UFDJ69Z
OCR Text ...100 1000 0 20 40 60 80 100 v r =200v i f =4a t c = 25 t c = 100 reverce recovery time, t rr [ns] di/dt [a/us] 100 1000 0 50 100 150 200 250 300 v r = 200v i f = 4a t c = 25 t c = 100 stored recovery charge, q ...
Description 6 A, 600 V, N-CHANNEL IGBT

File Size 564.65K  /  7 Page

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For 200v us Found Datasheets File :: 2012    Search Time::1.453ms    
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