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  2.7-3.8ghz Datasheet PDF File

For 2.7-3.8ghz Found Datasheets File :: 1064    Search Time::4.578ms    
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    ARJ2003 ARJ2003X ARJ2003Z ARJ22A4HZ ARJ2012 ARJ2012X ARJ2012Z ARJ2024 ARJ2024X ARJ2024Z ARJ204H ARJ204HX ARJ204HZ ARJ20A

Nais(Matsushita Electri...
Panasonic, Corp.
OSRAM GmbH
NAIS[Nais(Matsushita Electric Works)]
Matsushita Electric Works(Nais)
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OCR Text ... 10V DC 20cpm) (resistive load) 2 Form C Gold alloy Max. 150m 1W (at 5 GHz, Impedance 50 , V.S.W.R. &1.25) 10mA 10V DC (resistive load) 1W (...7 amplitude of 3 mm Vibration resistance 10 to 55 Hz at double Destructive amplitude of 5 mm Conditi...
Description    SMD RELAYS WITH 8GHz CAPABILITIES
SMD RELAYS WITH 8GHz CAPABILITIES 贴片继电器与8GHz的能

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    RF1126

RF Micro Devices
Part No. RF1126
OCR Text ... qfn, 6-pin, 2mmx1.3mmx0.35mm 2 of 7 rf1126 ds110405 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . absolute maximum ratings parameter rat...
Description BROADBAND MEDIUM POWER SPDT SWITCH

File Size 396.16K  /  7 Page

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    Q62702-F1086 BFR93A

SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1086 BFR93A
OCR Text ...on BFR 93A R2s Q62702-F1086 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage C...7 - GHz pF 0.9 dB 2 3.3 - IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Cc...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA)

File Size 57.66K  /  7 Page

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    MGF1601B 1601B

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF1601B 1601B
OCR Text ... @f=8GHz 0.50.15 @f=8GHz 2 2 APPLICATION S to X band medium-power amplifiers and oscillators. 2.50.2 3 QUALITY GRADE *...7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Magn. 0.899 0.874 0.848 0.822 0.796 0.771 0.745 0.7...
Description From old datasheet system
MICROWAVE POWER GaAs FET

File Size 25.18K  /  3 Page

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    ST Microelectronics
Part No. START540
OCR Text ...e maximum ratings start540 2/7 sot343 4 12 3 top vie w note(1): gms = | s 21 / s 12 | symbol parameter test conditions min. typ. max. unit i cbo collector cutoff current vcb = 5v, ie = 0a 150 na i ebo emitter-base cutoff current...
Description NPN Silicon RF Transistor

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    STA-5063Z

SIRENZA MICRODEVICES
Part No. STA-5063Z
OCR Text ...iant & Green Package 3.3 - 6.2 GHz General Purpose 3.3V 15dBm Amplifier SOT-363 2mm x 2.1mm Functional Block Diagram RFIN & VPC ...7 8 9 10 Freq(GHz) IN RL OUT RL GAIN Iq vs Vsupply (Vcc) 80 70 60 Iq(mA) 50 40 30 20 10 0 1.5 1....
Description 3.3 - 6.2 GHz General Purpose 3.3V 15dBm Amplifier

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    List of Unclassifed Man...
Part No. GW715153
OCR Text 2.4ghz/5.8ghz dipole antenna for ism band and wlan ieee 802.11a/b/g/h feature : 5dbi high performance antenna rp - sma(m) hinged...7 dbi - 0. 0dbi efficiency (straight) 8 0% 71 % efficiency (bend) 86 % 83 % polar...
Description 2.4GHz/5.8GHz Dipole Antenna for ISM Band and WLAN IEEE 802.11a/b/g/h

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    BGA416

INFINEON[Infineon Technologies AG]
Part No. BGA416
OCR Text ... = 3V * Typical supply voltage: 2.5 to 5.0V * SIEGET(R)-25 technology Applications * Buffer amplifiers * LNAs * Oscillator active devices G...7 176.8 S21 Mag 12.1310 11.9280 10.3940 8.9867 7.5805 6.4187 5.4350 4.6957 4.0607 3.5686 3.1353 ...
Description Silicon MMICs - DC ... 3GHz, 23dB, 62dB Isol. Cascode Amp. in SOT143
RF Cascode Amplifier

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    LT5579

Linear Technology
Part No. LT5579
OCR Text ...al leakage to the RF output. At 2.6GHz operation, the LT5579 provides high conversion gain of 1.3dB, high OIP3 of +26dBm and a low noise flo...7 GND 8 VCC 9 10 11 12 GND VCC VCC VCC LO 24 23 22 21 20 19 GND 1 GND 2 IF+ 3 IF- 4 GND 5 GND 6 S...
Description 1.5GHz to 3.8GHz High Linearity Upconverting Mixer

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    FSX017WF

Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
Part No. FSX017WF
OCR Text ...VDS) should not exceed 8 volts. 2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with gate resistance of 2000. 3. The operating channel temperature (Tch) should not exceed 145C. ELECTRICAL CHARACTER...
Description General Purpose GaAs FET

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For 2.7-3.8ghz Found Datasheets File :: 1064    Search Time::4.578ms    
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